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Author: search.filters.author.Khomdet, P.

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    Chemical characterization and electrical properties of indium oxynitride grown by reactive gas-timing RF magnetron sputtering
    (2010-02-05)
    Sungthong, A.
    ;
    Khomdet, P.
    ;
    Porntheeraphat, S.
    ;
    Hruanun, C.
    ;
    Poyai, A.
    This work investigates changes in the chemical composition of InON thin films, grown by reactive gas-timing rf magnetron sputtering with different O<inf>2</inf>:N<inf>2</inf> timing ratio characterized by Auger Electron Microscope (AES), Raman Spectroscopy which are well correlated with the electrical properties of films. The existence of nitrogen and oxygen in the deposited InON thin films was revealed by AES. Two Raman active optical phonons have been clearly observed and assigned to InN E<inf>1</inf>(TO) at ∼470 cm<sup>-1</sup> and E<inf>1</inf>(LO) at ∼570 cm<sup>-1</sup> and also shifted with different O<inf>2</inf>:N<inf>2</inf> timing ratio. The carrier mobility of InON thin films was decreased when the ratio of O<inf>2</inf>:N <inf>2</inf> timing is increased. © (2010) Trans Tech Publications.
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    Oxygen control on nanocrystal-AION films by reactive gas-timing technique R.F. magnetron sputtering and annealing effect
    (2008-12-01)
    Bunjongpru, W.
    ;
    Pomtheeraphat, S.
    ;
    Somwang, N.
    ;
    Khomdet, P.
    ;
    Hruanun, C.
    The AlON films grown on Si(100) substrates by using radio frequency (r.f.) magnetron sputtering from high purity aluminum (99.999% Al) target with a novel reactive gas-timing technique. The 100 nm thick of AlON films were deposited with 200 watts r.f. power and the substrate temperature is maintained at room temperature by the technique of gas-timing which varying flow-in sequence of high purity of Ar (99.999%) and N<inf>2</inf> (99.9999%) gases fed into the sputtering chamber at 10:90 (sec) ratio. The composition and crystal orientation of AlON films affected by gas-timing of Ar and N<inf>2</inf> were analyzed by Auger Electron Spectroscopy (AES) and Xray diffraction (XRD). The oxygen atoms revealed by AES formed into a corporation in films was studied. This suggests that the oxygen contamination formed as A10<inf>x</inf>N<inf>y</inf> compound may due to the residual oxygen in base pressure of 10<sup>-7</sup> mbar and higher reactivity of oxygen in the reactor compared to nitrogen. The gas-timing technique used in the sputtering growth system shows the advantage of the oxygen quantity control, while the general sputtering process (without gas-timing technique) shows an increase of the oxygen composition depended on film thickness. The characterizations results clearly indicate that the gas-timing r.f. magnetron sputtering technique plays an important role to control the incorporation of oxygen and to form the nanocrystalaluminum oxynitride films which very attractive for various sensors applications. © 2008 Trans Tech Publications, Switzerland.
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    The innovative AlN-ISFET based pH sensor
    (2008-10-06)
    Bunjongpru, W.
    ;
    Porntheeraphat, S.
    ;
    Trithaveesak, O.
    ;
    Somwang, N.
    ;
    Khomdet, P.
    This innovative pH-ISFET sensor used nanocrystalline-AlN thin film as ion-sensitive membrane which prepared by reactive gas-timing r.f, magnetron sputtering without heating substrate and post annealing. The technique of gas-timing r.f. magnetron sputtering purposed by us, the feeding gas is on-off controlled periodically in such a way that the deposited AlOxNy film has a quite stable composition of aluminum, nitrogen and oxygen (A1:O:N=52:18:30 %) all over the entire film. The AlN-ISFET devices were structured. The pH-sensitivity characteristics show increasing sensitivity depended on film thickness. The highest sensitivity is 54.50 mV/pH achieved from 80 nm of AlN thin film which is comparable to our previous report Si<inf>3</inf>N<inf>4</inf>-ISFET devices. © 2008 IEEE.