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Author: search.filters.author.Khumtong, Thanakorn

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    Ultrathin AlN barrier coatings for enhancing surface chemical stability and suppressing electrochemical migration in immersion silver–finished printed circuit boards
    (2026-08-15)
    Kaewbuadee, Woraprach
    ;
    Theekhasuk, Nattharika
    ;
    Khumtong, Thanakorn
    ;
    Rudradawong, Chalermpol
    ;
    Sakdanuphab, Rachsak
    Immersion silver-finished printed circuit boards (PCB-ImAg) provide low contact resistance and excellent solderability, but their chemical instability in humid and sulfur-containing environments can compromise long-term reliability. In this study, ultrathin aluminum nitride (AlN) films (20–60 nm) were deposited on PCB-ImAg substrates by reactive DC magnetron sputtering as inorganic barrier layers. Their protective performance was evaluated by accelerated H<inf>2</inf>S exposure, long-term ambient air exposure, tape testing, electrical resistance measurements, electrochemical migration (ECM) testing under a 3 V bias at 30 °C and 80% RH, and surface characterization. Uncoated PCB-ImAg samples showed severe tarnishing, Ag<inf>2</inf>S formation, dendritic corrosion, and a marked increase in electrical resistance after both H<inf>2</inf>S and prolonged air exposure. In contrast, AlN-coated samples retained a cleaner surface, remained adherent after the tape test, and showed much smaller resistance changes. X-ray photoelectron spectroscopy detected sulfur-related chemical states only on the uncoated surfaces, indicating suppression of sulfide formation by the AlN layer. A 20 nm AlN coating was sufficient for anti-tarnish and ambient air stability, whereas coatings of 40 nm or greater were required for robust ECM suppression. These results demonstrate that ultrathin AlN films effectively improve the corrosion resistance and ECM reliability of PCB-ImAg surfaces.
      5
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    Advances in flexible telluride thin-film thermoelectric generators: Deposition, performance, and module fabrication
    (2026-04-01)
    Theekhasuk, Nattharika
    ;
    Sakdanuphab, Rachsak
    ;
    Kianwimol, Supasak
    ;
    Khumtong, Thanakorn
    ;
    Toan, Nguyen Van
    Flexible thermoelectric generators (TEGs) are gaining increasing attention for wearable and skin-attachable electronics due to their ability to harvest low-grade heat from the human body. In this work, p-type Sb<inf>2</inf>Te<inf>3</inf> and n-type Bi<inf>2</inf>Te<inf>3</inf> thin films were deposited by direct current (DC) magnetron sputtering, and the effects of post-deposition annealing on their structural, electrical, and thermal transport properties were systematically evaluated. X-ray diffraction revealed that n-Bi<inf>2</inf>Te<inf>3</inf> exhibited higher crystallinity than p-Sb<inf>2</inf>Te<inf>3</inf>, attributed to its lower formation energy. Annealing at 250 °C markedly enhanced the electrical conductivity of both films, with p-Sb<inf>2</inf>Te<inf>3</inf> showing a larger improvement due to concurrent increases in carrier concentration and mobility driven by Te volatilization and the formation of acceptor-type vacancies and antisite defects. In contrast, n-Bi<inf>2</inf>Te<inf>3</inf> exhibited a slight reduction in carrier concentration as a result of compensating donor defects. Consequently, maximum ZT values of approximately 0.5 for p-Sb<inf>2</inf>Te<inf>3</inf> and 0.25 for n-Bi<inf>2</inf>Te<inf>3</inf> were achieved at 513 K. Notably, the compatibility factor (S) values of both films differed by less than a factor of two, indicating favorable thermodynamic pairing for p–n module assembly. A flexible TEG module with 12 thermocouples was subsequently fabricated and delivered an output power of 0.65 μW at ΔT < 25 K, demonstrating promising potential for scalable self-powered wearable electronics.
      2
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    Effect of nitrogen doping on optical and photocatalytic properties of TiO2 thin film prepared by spin coating process
    (2013-01-01)
    Mekprasart, Wanichaya
    ;
    Khumtong, Thanakorn
    ;
    Rattanarak, Jiravat
    ;
    Techitdheera, Wicharn
    ;
    Pecharapa, Wisanu
    Nitrogen-doped TiO<inf>2</inf> thin films were prepared by spin coating on glass substrate. Different amount of nitrogen doped in TiO<inf>2</inf> matrix was 0, 3 and 10%. As-obtained films were annealed at 400°C for 2 h. The optical and photocatalytic properties of N-doped TiO<inf>2</inf> thin films were analyzed via UV-Vis spectrophotometry. The chemical properties were investigated by Fourier transform infrared spectrometer and Raman spectroscopy. When doping TiO<inf>2</inf> with nitrogen, its absorption spectrum is shifted to visible region resulting to the enhancement of photocatalyst properties in dye photodegradation. Raman and FTIR patterns show that N-doped TiO<inf>2</inf> pattern is still identical to undoped TiO<inf>2</inf> pattern resulting to unsubstitutation of nitrogen atom in Ti-O bonding. © 2013 The Authors.
      1