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Author: search.filters.author.Khunkhao, SanyaSubject: search.filters.subject.I-V and C-V characteristic

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    Item type:Publication,
    Carrier lifetime of platinum doped P-N diode after irradiation by soft X-ray
    (2013-08-30)
    Nararug, Budsara
    ;
    Srithanachai, Itsara
    ;
    Ueamanapong, Surada
    ;
    Khunkhao, Sanya
    ;
    Janprapha, Supakorn
    This paper analyzes the effect of X-ray irradiation on the electrical properties of Pt-doped p-n diode. X-ray energy irradiated on Pt-doped P-N diode with 70 keV with time 205 sec. After irradiations, the current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics and carrier degeneration lifetime (τ<inf>g</inf>) were investigated. The results show that the leakage current is slightly increased after the diodes were exposed X-ray and affect higher degeneration carrier lifetime. The effects after X-ray irradiation indicated that the defects of the diode have been changed. © (2013) Trans Tech Publications Switzerland.