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Author: search.filters.author.Khunkhao, Sanya

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    Implementation of OTA-based memristor emulator for adjusting frequency
    (2019-07-01)
    Thongrak, Aphichata
    ;
    Sitjongsataporn, Suchada
    ;
    Khunkhao, Sanya
    ;
    Moungnoul, Phichet
    This paper introduces a memristor emulator circuit based on operational transconductance amplifiers (OTAs). The proposed circuits can be realized using commercially integrated circuits OTA, op amp as AD844, TL084, inductor, capacitor and resistors. The characteristic of memristor emulators can be tested in a practical experiment with the active and passive components. This lead to being a real memristor circuit application. OTA is used to realize electronically tunable current conveyors emulator circuit. The memristor (RM), memcapacitor (CM) and meminductor (LM) are proposed to determine in time-domain characteristics of the RLC-mode circuit. Experimental results have discussed the phenomena studied by the memory characteristics.
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    A Practical Implementation of Memristor Emulator Circuit Based on Operational Transconductance Amplifiers
    (2019-01-01)
    Thongrak, Apichata
    ;
    Sitjongsataporn, Suchada
    ;
    Khunkhao, Sanya
    ;
    Moungnoul, Phichet
    As described of electrical circuit have been considering that there are three fundamental passive twoterminal circuit elements; resistor, capacitor, and inductor respectively. In 1971, Prof. L. Chua proposed and described memristor which defines the relationship between magnetic flux and charge. This paper are purposed a memristor emulator circuit based on operational transconductance amplifiers (OTAs). The proposed circuits can be realized using commercially integrated circuits OTA, op amp as AD844, TL084, inductor, capacitor and resistors. The characteristic of memristor emulators can be examined in a practical experiment with the active and passive components. As described, the results could be demonstrated with the memristor circuit application. Furthermore, OTA is used to realize electronically tunable current conveyors emulator circuit. As a result of simulation, the decremental and incremental memristor emulator circuit is suitable for connecting in a series circuit. It was found that the frequency-dependent pinched hysteresis loop of proposed memristor emulator circuits can be updated by changing the value of capacitance and resistance, besides it increases the current gain of current conveyor. In addition to the expected results of memristor (RM), Memcapacitor (CM) and meminductor (LM) are proposed to determine in time-domain characteristics of R-L-C mode circuits. The results of experimental are discussed of phenomena studies by the memory characteristics.
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    Carrier lifetime of platinum doped P-N diode after irradiation by soft X-ray
    (2013-08-30)
    Nararug, Budsara
    ;
    Srithanachai, Itsara
    ;
    Ueamanapong, Surada
    ;
    Khunkhao, Sanya
    ;
    Janprapha, Supakorn
    This paper analyzes the effect of X-ray irradiation on the electrical properties of Pt-doped p-n diode. X-ray energy irradiated on Pt-doped P-N diode with 70 keV with time 205 sec. After irradiations, the current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics and carrier degeneration lifetime (τ<inf>g</inf>) were investigated. The results show that the leakage current is slightly increased after the diodes were exposed X-ray and affect higher degeneration carrier lifetime. The effects after X-ray irradiation indicated that the defects of the diode have been changed. © (2013) Trans Tech Publications Switzerland.