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Author: search.filters.author.Kladkaew, MeaunfunSubject: search.filters.subject.Copper telluride

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    Item type:Publication,
    Effect of annealing process on the properties of undoped and manganese2+-doped co-binary copper telluride and tin telluride thin films
    (2018-04-15)
    Kladkaew, Meaunfun
    ;
    Samranlertrit, Norasate
    ;
    Vailikhit, Veeramol
    ;
    Teesetsopon, Pichanan
    ;
    Tubtimtae, Auttasit
    The binary semiconductor materials Cu<inf>1.81</inf>Te and SnTe materials, without and with manganese (Mn<sup>2+</sup>) doping, were prepared by dropping a Cu-Sn-Te solution on a commercial glass substrate to fabricate a co-binary thin film. The characteristics, optical, and electrical properties of undoped and Mn<sup>2+</sup>-doped Cu<inf>1.81</inf>Te/SnTe thin films were investigated with variations in the annealing process. The XRD results confirmed the films consisted of the co-binary orthorhombic phase materials Cu<inf>1.81</inf>Te and SnTe, and that for all annealing temperatures from 50 to 400 °C an amorphous structure became prevalent in the Mn<sup>2+</sup>-incorporated co-binary thin films. The optical parameters and electrical performance varied with the annealing temperatures and Mn<sup>2+</sup> doping, showing alterations in the properties of the co-binary film. These co-binary thin films have feasibility for real applications in surface analysis, electro-optical materials, solar selective surfaces, and photovoltaic thermal devices.