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Author: search.filters.author.Luanatikomkul, W.

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    The mechanism of dual schottky magnetodiode
    (2012-10-02)
    Phetchakul, T.
    ;
    Luanatikomkul, W.
    ;
    Yamwong, W.
    ;
    Poyai, A.
    This paper presents the mechanism of dual schottky magnetodiode. The device can operate both in forward and reverse biasing for magnetic field sensor. Two modes of operation show linearity which electron is only type of carrier. In forward bias, the deflected electrons in n-type semiconductor cathode are injected to metal anode. In reverse bias, the electrons from metal anode are injected and continuously deflected in n-type semiconductor cathode. Comparison of two modes at the same current shows the same sensitivity. © 2012 IEEE.
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    The study of forward and reverse schottky junction for dual magnetodiode
    (2012-06-01)
    Phetchakul, T.
    ;
    Luanatikomkul, W.
    ;
    Yamwong, W.
    ;
    Poyai, A.
    This paper presents schottky diode for sensing magnetic field. The structure is the same as dual magnetodiode that had been reported by the same group. The device can operate both in forward and reverse biasing for magnetic field device. The sensitivity (ΔV <inf>o</inf>/ΔB) by simulation of forward bias is 0.8 mV/T at the current 1.93 μA and reverse bias is 6 nV/T at the current 13.49 pA. Two modes of operation show linearity which electron is the only type of carrier. The mechanism of forward and reverse modes of operation are described. © 2012 IEEE.