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Author: search.filters.author.Muanghlua, RangsonSubject: search.filters.subject.NMOS

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    Effect and Determination of Oxide Trapped Charge and Interface Trapped Charge Density of Threshold Voltage Shift in Irradiated MOSFET by Subthreshold Methodology
    (2023-10-01)
    Ruangphanit, Anucha
    ;
    Muanghlua, Rangson
    ;
    Wongprasert, Yothin
    This paper presents the effects and determination of oxide and interface trapped charge density of threshold voltage shift in irradiated MOSFET by subthreshold methodology. The designed dimension, channel width per channel length (W/L) is 20 µm/20 µm. The threshold voltage is extracted by a linear extrapolation methodology. The over all threshold voltage shifts are caused by oxide trapped charge and interface trapped charge. The subthreshold methodology determines the interface trapped charge. The<sup>60</sup>Co gamma-ray source was used for irradiation to a total dose of 10 kGy. The results showed that the threshold voltage shift is approximately-24 mV/kGy for NMOS and-27 mV/kGy for PMOS. The subthreshold swing shift is approximately 1.2 mV/dec.kGy for NMOS and 0.9 mV/dec.kGy for PMOS. The oxide trapped charge density N<inf>OT</inf> and interface trapped charge density N<inf>IT</inf> are found to be increased in NMOS and PMOS respectively. The ratio of ΔN<inf>OT</inf>/ΔN<inf>IT</inf> was approximately 2.2 times for NMOS and 2.8 times. Due to the structure, the channel of NMOS is a surface channel whereas the channel of PMOS is a buried channel. Finally, the effect of gamma irradiation on the PMOS was greater than the effect on NMOS observed from the change in threshold voltage and the ratio of ΔN<inf>OT</inf>/ΔN<inf>IT.</inf>.
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    Extraction of mobility degradation, effective channel length and total series resistance of NMOS at elevated temperature
    (2011-08-12)
    Kiddee, Kunagone
    ;
    Ruangphanit, Anucha
    ;
    Niemcharoen, Surasak
    ;
    Atiwongsangthong, Narin
    ;
    Muanghlua, Rangson
    This article describes the extraction of total series resistance, effective channel length and low field effective channel mobility degradation parameter at temperature in the range of 25°C-125°C of NMOS device. The relation of I<inf>DS</inf> and V<inf>GS</inf> in a linear region was used with a different of channel length. The procedure is based on the measurement of the transconductance characteristics of MOSFET in the linear region. The transconductance characteristics is determine for the several devices of difference drawn channel length. The results shows that, the effective channel length is increased in a range of 5×10<sup>-10</sup> m/°C. The low field mobility degradation parameter is decreased by the factor of 0.733. The total series resistance is increased in the range of 1.4 Ω-μm/°C. The errors between the predicted model and measured of I<inf>DS</inf>&V <inf>GS</inf> in linear region is approximately 3%. © 2011 IEEE.