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Author: search.filters.author.Nawi, I. N.M.

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    A comprehensive treatment of parametric effect in a silicon microring resonator
    (2016-05-18)
    Nawi, I. N.M.
    ;
    Ali, J.
    ;
    Yupapin, P. P.
    Silicon microring resonator provides a new platform to form the building block for all-optical circuits, where it could be integrated on a single chip as a passive or active components. Here, we report a comprehensive treatment of parametric effect in a symmetrical add/drop silicon microring resonator with 5 μm radius operating within telecom wavelength spectrum or C-band ranging from 1530 nm to 1565 nm. The power outputs of the system are analyzed by using transfer matrix method. The FSR and FWHM have been optimized. The results demonstrated here will pave the way towards the new on-chip and chip-to-chip architecture and structure for low power and high bandwidth applications especially for all-optical switch and optical modulator.
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    Soliton pulse induces TPA effect in a silicon MRR all-optical switch
    (2016-05-18)
    Nawi, I. N.M.
    ;
    Ali, J.
    ;
    Yupapin, P. P.
    One of the critical problems in achieving a real practical all-optical switching devices is the requirement for a strong material nonlinearity. A strong material nonlinearity is crucial in order to achieve a low switching power. However, silicon-based all-optical switches require extremely high switching power due to its relatively weak nonlinear optical properties. To overcome this limitation, we have designed an all-optical switch configuration based on silicon microring resonator structure and demonstrated the switching operation based on the nonlinear effects induced by a soliton pulse. The soliton pulse induces free-carrier concentration through two-photon absorption (TPA) effect and this leads to enhance the refractive index change and enhance the nonlinearity of the silicon. Thus, the silicon microring resonator alters the nonlinear phase shift which is required for switching.
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    A theoretical model of all-optical switching induced by a soliton pulse in nano-waveguide ring resonator
    (2013-01-01)
    Nawi, I. N.M.
    ;
    Bahadoran, M.
    ;
    Ali, J.
    ;
    Yupapin, P.
    We propose a theoretical model of 1x2 all-optical switching in a silicon nano-waveguide ring resonator induced by a soliton pulse. All-optical switches made by silicon fiber or silicon waveguide have attracted much attention, because the low-absorption wavelength windows of silicon material just match optical fiber communication. However, to achieve all-optical switching in silicon is challenging owing to its relatively weak nonlinear optical properties and require high switching power, which is much higher than the signal power. Such high power is inappropriate for effective on-chip integration. To overcome this limitation, we have used a highly confined nano-waveguide ring resonator structure with soliton pulse input to enhance the nonlinearity and this leads to enhance the effect of refractive index change on the transmission response. The refractive index is changed by controlling the free-carrier concentration through two-photon absorption (TPA) effect. The result indicates that a refractive index change as small as 6.4×10<sup>-3</sup> can reduce the switching power to 2.38 ×10<sup>-6</sup> W. The nano-waveguide ring resonator all-optical switching described here is achieved by using the concept of strong light confinement, and the switching power is approximately three orders of magnitude lower than the available silicon optical switches. Such controllable switch is desired for achieving high performance in nanometer-size planar structures.