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Author: search.filters.author.Onlaor, K.Subject: search.filters.subject.memory

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    Structural, Optical, and Electrical Properties of Sputtered ZnO Thin Films and Their Application in Transparent Memory Devices
    (2022-12-01)
    Tunhoo, B.
    ;
    Kaewkusonwiwat, S.
    ;
    Thiwawong, T.
    ;
    Onlaor, K.
    We report on the fabrication of ZnO thin films using a lab-made DC sputtering process. The ZnO films were prepared at several applied sputter voltages at fixed deposition times. The properties of the deposited films were characterized by x-ray diffraction, x-ray photoelectron spectroscopy, field-emission scanning electron microscopy, and UV–visible spectroscopy. The ZnO thin films exhibited a polycrystalline phase in the dominant (100) plane, with film thicknesses in the order of approximately 50–80 nm. In addition, a transparent memory device based on the ZnO film was successfully fabricated with a device structure of ITO/ZnO/EVA/ITO. The fabricated device exhibited high optical transparency of approximately 70% in the visible light region. The fabricated memory device demonstrated memory properties with a maximum ON/OFF current ratio of 4.66 × 10<sup>3</sup> and showed good retention properties.
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    Electrical Bistable Properties of P-25 TiO2 Nanoparticles Composited with PVP for Memory Devices
    (2019-10-01)
    Ukakimaparn, P.
    ;
    Chantarawong, D.
    ;
    Songkeaw, P.
    ;
    Onlaor, K.
    ;
    Thiwawong, T.
    In this work, P-25 titanium dioxide nanoparticles (TiO<inf>2</inf> NPs) were composited with poly-vinylpyrrolidone (PVP) at various concentrations of TiO<inf>2</inf> NPs. The bistable memory devices were fabricated by spin coating from a prepared PVP:TiO<inf>2</inf> NPs solution on indium tin oxide (ITO) electrodes with the device structure of ITO/PVP:TiO<inf>2</inf> NPs/Al. The maximum ON/OFF current ratio of the bistable memory devices was approximately 10<sup>5</sup> at a reading voltage of +1 V. The mechanism of the memory device can be expressed by theoretical fitting between the experimental results and conduction models. Moreover, a retention time test for continuous read operations of the device is presented.