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Optical band engineering of metal-oxynitride based on tantalum oxide thin film fabricated via reactive gas-timing RF magnetron sputtering
(2016-11-25)
Khemasiri, N.
;
Jessadaluk, S.
;
Chananonnawathorn, C.
;
Vuttivong, S.
;
Lertvanithphol, T.
In this paper, we demonstrate a novel technique, as called reactive gas-timing (RGT) RF magnetron sputtering, to control and design an optical band engineering of TaON thin films without an external heating substrate temperature and post annealing treatment process. The influence of the oxygen intervals ranged from 5 to 60 s on deposition rate, chemical composition and optical properties of TaON thin films were investigated. The chemical composition was characterized by auger electron spectroscopy (AES). The optical properties were determined by UV–Vis spectrophotometer and spectroscopic ellipsometry. The nitrogen atomic concentration of the TaON thin films deposited by RGT decreased when the oxygen gas-timing intervals increased. In addition, the RGT sputtered TaON films could be demonstrated band gaps engineering from 1.90 to 2.15 eV.
1
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Very low drift and high sensitivity of nanocrystal-TiO 2 sensing membrane on pH-ISFET fabricated by CMOS compatible process
(2013-02-15)
Bunjongpru, W.
;
Sungthong, A.
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Porntheeraphat, S.
;
Rayanasukha, Y.
;
Pankiew, A.
High sensitivity and very low drift rate pH sensors are successfully prepared by using nanocrystal-TiO <inf>2</inf> as sensing membrane of ion sensitive field effect transistor (ISFET) device fabricated via CMOS process. This paper describes the physical properties and sensing characteristics of the TiO <inf>2</inf> membrane prepared by annealing Ti and TiN thin films that deposited on SiO <inf>2</inf> /p-Si substrates through reactive DC magnetron sputtering system. The X-ray diffraction, scanning electron microscopy and Auger electron spectroscopy were used to investigate the structural and morphological features of deposited films after they had been subjected to annealing at various temperatures. The experimental results are interpreted in terms of the effects of amorphous-to-crystalline phase transition and subsequent oxidation of the annealed films. The electrolyte-insulator-semiconductor (EIS) device incorporating TiON membrane that had been obtained by annealing of TiN thin film at 850 °C exhibited a higher sensitivity (57 mV/pH), a higher linearity (1), a lower hysteresis voltage (1 mV in the pH cycle of 7 → 4 → 7 → 10 → 7), and a smaller drift rate (0.246 mV/h) than did those devices prepared at the other annealing temperatures. Furthermore, this pH-sensing device fabrication process is fully compatible with CMOS fabrication process technology. © 2012 Elsevier B.V. All rights reserved.
1
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UV-enhanced photodetector with nanocrystalline-TiO 2 thin film via CMOS compatible process
(2011-12-01)
Bunjongpru, W.
;
Panprom, P.
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Porntheeraphat, S.
;
Meananeatra, R.
;
Jeamsaksiri, W.
This research presents nanocrystal titaniumdioxide (nanocrystal-TiO <inf>2</inf>) film deposition technique with CMOS compatible process [1] to extend the optical response bandwidth of silicon based photodetecting devices toward ultraviolet range [2]. The thin films were initially deposited as Titanium Nitride (TiN) using DC magnetron reactive sputtering system. It was then annealed under nitrogen atmosphere at 800°C. After analyzing crystal structures and surface morphology with X-ray diffraction and FE-SEM systems, it was found that the deposited thin films showed the crystal phase of TiO <inf>2</inf> oriented along (200) plane of Rutile crystal structure with 50 nm grain size and increasing with film thickness. Using electroreflectance (ER) spectroscopy measurement [3], the bandgap of nanocrystal-TiO <inf>2</inf> was revealed to be 3.16 eV. PN-heterojunction photodiodes were fabricated with Nanocrystal-TiO <inf>2</inf>/SiO <inf>2</inf>/p-Si structures. Interdigitated aluminum structures were used as electrodes. By varying the thickness of nanocrystal-TiO <inf>2</inf> film, i.e. 30, 60, and 90 nm, the devices could response further into the UV range. The absorption edge wavelength investigated by photoresponse measurement was at 275 nm and shifting to the shorter wavelength as a function of the nanocrystal-TiO <inf>2</inf> grain size due to quantum confinement phenomenon [4]. The nanocrystal-TiO <inf>2</inf>/SiO <inf>2</inf>/p-Si photodetector had dark current = 5.31nA (2V), photocurrent = 0.9 uA, rise time = 58 us, fall time = 47 us at 30 nm thickness of TiO <inf>2</inf>. © 2011 IEEE.
2
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Oxygen gas-timing control for variety properties of sputtered-ZnO
(2010-02-05)
Limwichean, K.
;
Porntheeraphat, S.
;
Bunjongpru, W.
;
Panprom, P.
;
Pankiew, A.
In this report, we present sputtered zinc oxide (ZnO) thin films grown with different argon (Ar) and oxygen (O<inf>2</inf>) gas-timing sequence. Metallic zinc (Zn) with 5N-purity was used as a sputtering target, while Ar and O <inf>2</inf> of 6N-purity were used as the bombard and reactive gases, respectively. The crystalline orientation, surface morphology, chemical composition, optical and electrical properties of deposited ZnO thin films were determined by XRD,AFM and UV-VIS measurement, respectively. The XRD result implied that deposition ZnO thin films at different O<inf>2</inf> gas-timing control corresponded to the (002) plane of hexagonal ZnO structure at 2θ = 34.4°. Furthermore, when the reactive time of O<inf>2</inf> was increased, the transmittance of ZnO thin films exhibited the energy gap increase from ∼2.95 to ∼3.18 eV, whereas the surface roughness was found to decrease. Finally, ZnO thin films were oxidized after the deposition. © (2010) Trans Tech Publications.
2
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The optimization of TiN film deposited by DC magnetron sputtering provided for Al diffusion barrier
(2010-02-05)
Pankiew, A.
;
Bunjongpru, W.
;
Somwang, N.
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Porntheeraphat, S.
;
Pratontep, S.
Titanium nitride (TiN) film has been widely used as a diffusion barrier layer for VLSI contact metallization because TiN is an excellent barrier against inter-diffusion between Al and Si substrate or silicide. In this work, we studied the properties of TiN films deposited by DC magnetron sputtering with varying N<inf>2</inf>:Ar flow rate ratio in order to optimize growth conditions and film properties provided for Al diffusion barrier purpose. The TiN films were deposited at the constant pressure level and sputtering time. The crystalline orientation, composition and electrical properties of deposited TiN films were characterized by XRD, AES-depth profile and Four Point Probe measurement, respectively. The XRD results show that the deposited TiN film has two preferred orientations of TiN(111) and TiN(200) planes. The highest intensity of the TiN(111) plane was obtained when the N<inf>2</inf>:Ar flow rate ratio was 3:1. The electrical resistivity was increased when the N <inf>2</inf>:Ar flow rate ratio was decreased. The minimum electrical resistivity is 127.8 μΩ-cm when the N<inf>2</inf>:Ar flow rate ratio is 3:1. © (2010) Trans Tech Publications.

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