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Author: search.filters.author.Patcharasardtra, NuttapongSubject: search.filters.subject.FinFET

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    Influence of Temperature to Electron Mobility on Top of Channel in 14 nm n-FinFET
    (2017-01-01)
    Patcharasardtra, Nuttapong
    ;
    Pengchan, Weera
    he temperature behavior that influential to the electron mobility on top surface in 14 nanometer FinFET channel. The Mobility could find on I-V characterizing simulation process and giving the result from the TCAD software by biasing on the FinFET structure with gate voltage at 1 volt and the drain-source voltage from 0 Volt to 1 Volt to obtain the saturation drain current from I-V characteristic. The Electron mobility was lowering by increasing the temperature from 303K (30°C) to 353K (80°C). This FinFET structure gave the I<inf>DS (Sat)</inf> about 29 µA and gave mobility at V<inf>DS</inf> = 0 Volt about 575 cm<sup>2</sup>/Vs, at V<inf>DS</inf> = 1 Volt, the mobility dramatically down to 3.4 cm<sup>2</sup>/Vs.
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    Electrical characteristics of different gate geometry of FinFET
    (2016-01-01)
    Patcharasardtra, Nuttapong
    ;
    Pengchan, Weera
    This paper proposed to the electrical characteristics of difference gate geometry of FinFET. Four of difference gate structure have been designed and simulated by GTS Framework TCAD software which is simulation the characteristics of FinFET device include drain currentvoltage, threshold voltage and subthreshold swing. Then, the electrical characteristics was compared. From the result found that the drain current depend on gate geometry of FinFET. The largest gate geometry of FinFET device was the rectangle shape with gate width at 66 nm, IDS about 19.8 mA and VTH = 0.5 V and the smallest gate geometry, the triangle shape with gate width at 52 nm and give IDS about 8.5 mA and Vth = 0.5 V.