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Author: search.filters.author.Phetchakul, ToempongSubject: search.filters.subject.Hall effect

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    Magnetic GAA (MAG-GAA) for Vertical and Horizontal Magnetic Field Detection
    (2024-01-01)
    Swe, Khine Thandar Nyunt
    ;
    Poyai, Amporn
    ;
    Phetchakul, Toempong
    The Gate All Around (GAA) is introduced as a magnetic sensor to sense the vertical and horizontal magnetic field applied to the device. Magnetic GAA (MAG-GAA) consisting of one source contact, one gate contact wrapped around the channel, and four drain contacts are created and simulated for the two-dimensional magnetic field detection using Sentaurus. The proposed device structure of MAG-GAA is designed and operated based on the current mode of the Hall effect. The vertical magnetic field is sensed by activating the drain contacts D<inf>1</inf> and D<inf>2</inf>. To detect the horizontal magnetic field, the drain contacts D<inf>3</inf> and D<inf>4</inf> positioned at the top and bottom surfaces of the device are enabled. The differential drain current is obtained as the magnetic response in both detections. MAG-GAA in which the channel length and width are 10 nm and 5 nm respectively is simulated by applying the magnetic field 0.1 T, 0.2 T, 0.3 T, 0.4 T, and 0.5 T in +z, -z, +y, and -y directions. Their respective magnetic responses are illustrated, and the Hall current reaches the highest value at the magnitude of the magnetic field 0.5 T in both cases of magnetic field detection. The sensitivity of MAG-GAA for vertical magnetic field detection is better than its sensitivity for the horizontal magnetic field.
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    Split-current magnetoresistor
    (2013-10-04)
    Phetchakul, Toempong
    ;
    Taisettavatkul, Prateep
    ;
    Yamwong, Wittawat
    ;
    Poyai, Amporn
    The split-current magnetoresistor is proposed here. The structure likes the series magnetoresistor that one end split into two symmetrical terminals, so it is the magnetoresistor with three terminals. It uses the Hall effect current mode as magnetoresistor but the output is the differential current instead of resistance. It shows good linearity and can detect the magnetic field direction. The sensitivity in the differential current of width 100 μm and length 200 μm at 1 mA is 2.788×10<sup>-6</sup> A/T constantly while the conventional one in the differential resistance is varied with magnetic field. It is made of silicon non magnetic material so it is compatible with the modern low-voltage current-mode integrated circuit. © (2013) Trans Tech Publications, Switzerland.
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    The deflection length and emitter width on sensitivity of magnetotransistor
    (2011-10-04)
    Phetchakul, Toempong
    ;
    Sottip, Panyakorn
    ;
    Leepattarapongpan, Chana
    ;
    Penpondee, Narichapan
    ;
    Pengpad, Putapon
    This paper presents a study of effect of deflection length and emitter width on sensitivity of magnetotransistor. The device has been fabrication on standard CMOS technology. It can detect magnetic field applied vertically to the chip. The structure consists of emitter (n-type), base (p-type) and collector (n-type) on silicon p-substrate. The device can sense magnetic field by Hall Effect theory and carrier deflection resulting to difference between base and collector current (ΔI<inf>CB</inf>) related to magnetic field (B <inf>Z</inf>) strength. From the experiment is comparing emitter width of 4, 5 and 10 micrometer at deflection length of 10 and 20 micrometer. The result shows that increase in injection emitter width cause to the sensitivity decreases and the deflection length of 20 micrometer is the best sensitivity. These results are very useful for developing the magnetotransistor for high sensitivity and performance. © 2011 IEEE.
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    Dual magnetodiode
    (2009-12-01)
    Phetchakul, Toempong
    ;
    Junkamkaw, Sumet
    This paper presents magnetodiode which the structure consists of two pn junction diodes. The anodes are common together and the cathodes are symmetrical separated. It is designed, fabricated and measured the magnetic responses. The mechanism is mainly carrier deflection of injected carrier from the common anode by forward biasing toward to the separated cathode. When magnetic field is applied perpendicular to the device surface, the current difference caused by Hall effect and Lorentz force is linearly changed with the magnetic field density at any applied current. It can detect both the direction and magnitude of magnetic field.