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Mesoscopic Interference of Rotated Spins in Graphene Coupled to High-Spin–Orbit-Coupling Substrates
(2025-11-05)
Yokoi, Kazushi
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Somphonsane, Ratchanok
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Ramamoorthy, Harihara
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Arabchigavkani, Nargess
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He, Keke
We explore the manifestations of spin rotation in graphene in proximity with two different types of high-spin–orbit-coupling (SOC) materials (ferromagnetic Co and nominally diamagnetic WSe<inf>2</inf>). Using weak antilocalization (WAL) as a probe of the induced rotation, we demonstrate that spin interference exhibits a highly stochastic (nonself-averaging) character in the mesoscopic limit. At low temperatures (<20 K), the spin rotation is manifested as a zero-bias peak (or zero-bias anomaly, ZBA) in the differential conductance, a feature that, as expected for WAL, is suppressed by fairly modest magnetic fields (<∼10<sup>2</sup>mT). The ZBA moreover exhibits a stochastic variation when a gate voltage is used to sweep the Fermi level through the graphene bands, with ranges for which the antilocalization is either prominent or strongly suppressed. This mesoscopic character is exhibited by both of the studied systems, whose ZBA is also damped in similar fashion with increasing temperature. We thus provide fundamental insight into the nonensemble-averaged (nonself-averaged) character of spin interference in mesoscopic systems with strong SOC and, more specifically, into how the details of spin rotation are impacted by external gating. This understanding may ultimately enable the efficient modulation of spin currents in future spintronic devices.
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Design and Implementation of a High-Field NdFeB Magnet System for Investigating the Spin Seebeck Effect
(2025-01-01)
Nachaithong, Theeranuch
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Wongjom, Chalothon
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Samransuksamer, Benjarong
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Phumying, Santi
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Pongophas, Ekkarat
The generation of pure spin current through thermal gradients, known as the spin Seebeck effect (SSE), has garnered significant interest in spintronics. In this study, we design and construct a permanent magnetic instrument setup to generate a variable external magnetic field using NdFeB permanent magnets to observe the SSE. The experimental setup is composed of three crucial components: the magnetic field, the temperature gradient, and electronic control systems. Si/yttrium iron garnet (YIG)/platinum (Pt) and Si/nickel (Ni) samples, prepared via sputtering techniques, were utilized for standard calibration purposes. The results show that the external magnetic field produced by NdFeB varies with the gap distance between the two magnetic poles, following an exponential decrease in field strength with increasing gap distance. The magnetic field at the center can be adjusted from ±20 to ±5000 Oe. The temperature gradient stabilizes after approximately 10 min, with a temperature difference ( ΔT ) between the heated and cooled sides ranging from 0 to 30 K. For instrument testing, we performed magnetic field and angle-dependent measurements on Si/YIG/Pt and Si/Ni samples. The results indicate that the magnetic field dependence of the permanent magnet instrument (PMI) does not exhibit the voltage loop switching seen with an alternative magnetic coil (AMC) but shows analogous behavior at high magnetic fields. Moreover, the angle dependence of both PMI and AMC yielded comparable results. In conclusion, our PMI setup procedures effectively facilitate the observation of the SSE.
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Advances in 2D Material Transfer Systems for van der Waals Heterostructure Assembly
(2024-07-01)
Somphonsane, Ratchanok
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Buapan, Kanokwan
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Ramamoorthy, Harihara
The assembly of van der Waals (vdW) heterostructures using 2D material transfer systems has revolutionized the field of materials science, enabling the development of novel electronic and optoelectronic devices and the probing of emergent phenomena. The innovative vertical stacking methods enabled by these 2D material transfer systems are central to constructing complex devices, which are often challenging to achieve with traditional bottom-up nanofabrication techniques. Over the past decade, vdW heterostructures have unlocked numerous applications leading to the development of advanced devices, such as transistors, photodetectors, solar cells, and sensors. However, achieving consistent performance remains challenging due to variations in transfer processes, contamination, and the handling of air-sensitive materials, among other factors. Several of these challenges can be addressed through careful design considerations of transfer systems and through innovative modifications. This mini-review critically examines the current state of transfer systems, focusing on their design, cost-effectiveness, and operational efficiency. Special emphasis is placed on low-cost systems and glovebox integration essential for handling air-sensitive materials. We highlight recent advancements in transfer systems, including the integration of cleanroom environments within gloveboxes and the advent of robotic automation. Finally, we discuss ongoing challenges and the necessity for further innovations to achieve reliable, cleaner, and scalable vdW technologies for future applications.
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Spin Seebeck effect and large spin conversion in amorphous Fe2TiSb/polycrystalline Y3Fe5O12 thin films
(2024-05-30)
Wongjom, Poramed
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Wongjom, Chalothon
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Pongophas, Ekkarat
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Infahsaeng, Yingyot
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Maiaugree, Wasan
This study investigates spin current generation in a Fe<inf>2</inf>TiSb/Y<inf>3</inf>Fe<inf>5</inf>O<inf>12</inf> multi-layer thin film as prepared via the magnetron sputtering method. Comprehensive characterization techniques are employed to assess film properties, including X-ray diffraction, energy-dispersive X-ray spectroscopy, Scanning electron microscopy, and Vibrating sample magnetometer. The Y<inf>3</inf>Fe<inf>5</inf>O<inf>12</inf> material exhibits a polycrystalline ferromagnetic insulator behavior, while the 20 nm-thick Fe<inf>2</inf>TiSb film displays small ferromagnetic metal properties with an amorphous structure. Spin current analysis utilizes the longitudinal spin Seebeck effect configuration, considering magnetic field and temperature dependencies and the results show that spin conversion within the Fe<inf>2</inf>TiSb/Y<inf>3</inf>Fe<inf>5</inf>O<inf>12</inf> structure is influenced by both the spin Seebeck effect and the anomalous Nernst effect, resulting in an overall spin signal enhancement. The spin Seebeck coefficient of Fe<inf>2</inf>TiSb/Y<inf>3</inf>Fe<inf>5</inf>O<inf>12</inf> was approximately 0.103 μV/K within a magnetic field of 300 mT.
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Investigating the shunting effect in a Fe/Co ferromagnetic metal hybrid structure and its impact on the spin Seebeck effect
(2024-03-01)
Phumying, Santi
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Wongjom, Chalothon
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Pongophas, Ekkarat
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Infahsaeng, Yingyot
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Maiaugree, Wasan
The generation of spin voltage by heat, known as the spin Seebeck effect (SSE), involves the injection of spin current from a ferromagnetic to a normal metal. In this study, the shunting effect in SSE is investigated within a hybrid structure consisting of iron (Fe) and cobalt (Co) films deposited on a Si-wafer substrate using thermal evaporation [Si/Fe(500 nm)/Co(10 nm)]. Spin voltage measurements performed in the in-plane configuration revealed a voltage reversal in the Co film and Fe film. However, in the hybrid structure (Si/Fe/Co), the voltage signal exhibited consistent directionality. This intriguing observation hints at a potential shunting effect, wherein the voltage influence from the Fe layer contributes to the Co film. Consequently, it is deduced that a significant shunting effect occurs when the resistivity of Fe is approximately three orders of magnitude lower than that of the Co film. This insight sheds light on the intricate dynamics of spin thermoelectric applications, emphasizing the role of material properties in optimizing performance.
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The Spin Voltage Enhancement in Si/YIG/Co, Fe Spin Hall Thermopiles
(2024-01-01)
Kumpor, Wimutti
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Kuptapol, Perawas
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Wongjom, Chalothon
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Pongophas, Ekkarat
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Infahsaeng, Yingyot
Spin-Hall thermopiles have been previously proposed as a means to enhance the spin Seebeck effect (SSE). However, the use of platinum (Pt) for spin detection drives costs high and proves an impediment for scalability. In this work, a cost-effective spin-Hall thermopile constructed from opposite spin-Hall angle ferromagnets, cobalt (Co) and iron (Fe), is reported. The devices are fabricated using a standard sputter-coated yttrium iron garnet (YIG) substrate that serves as the spin injector, and thermally evaporated Co and Fe strips that enable spin detection. When serially connected to form a (YIG/Co, Fe) thermopile structure, measurements indicate a significant enhancement of the spin voltage that results from the additive spin contributions of the opposite spin-Hall angle ferromagnets and the anomalous Nernst effect (ANE) that they exhibit. The YIG/Co, Fe thermopile reported here offers a cost-effective alternative to Pt-based thermopiles and the possibility of large-scale implementation to realize future thermoelectric generators.
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Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene
(2023-12-01)
Nathawat, Jubin
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Mansaray, Ishiaka
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Sakanashi, Kohei
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Wada, Naoto
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Randle, Michael D.
Stacking of graphene with hexagonal boron nitride (h-BN) can dramatically modify its bands from their usual linear form, opening a series of narrow minigaps that are separated by wider minibands. While the resulting spectrum offers strong potential for use in functional (opto)electronic devices, a proper understanding of the dynamics of hot carriers in these bands is a prerequisite for such applications. In this work, we therefore apply a strategy of rapid electrical pulsing to drive carriers in graphene/h-BN heterostructures deep into the dissipative limit of strong electron-phonon coupling. By using electrical gating to move the chemical potential through the “Moiré bands”, we demonstrate a cyclical evolution between metallic and semiconducting states. This behavior is captured in a self-consistent model of non-equilibrium transport that considers the competition of electrically driven inter-band tunneling and hot-carrier scattering by strongly non-equilibrium phonons. Overall, our results demonstrate how a treatment of the dynamics of both hot carriers and hot phonons is essential to understanding the properties of functional graphene superlattices.
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Versatile recognition of graphene layers from optical images under controlled illumination through green channel correlation method
(2023-10-30)
Sahriar, Miah Abdullah
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Abed, Mohd Rakibul Hasan
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Nirjhar, Ahsiur Rahman
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Dipon, Nazmul Ahsan
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Tan-Ema, Sadika Jannath
In this study, a simple yet versatile method is proposed for identifying the number of exfoliated graphene layers transferred on an oxide substrate from optical images, utilizing a limited number of input images for training, paired with a more traditional number of a few thousand well-published Github images for testing and predicting. Two thresholding approaches, namely the standard deviation-based approach and the linear regression-based approach, were employed in this study. The method specifically leverages the red, green, and blue color channels of image pixels and creates a correlation between the green channel of the background and the green channel of the various layers of graphene. This method proves to be a feasible alternative to deep learning-based graphene recognition and traditional microscopic analysis. The proposed methodology performs well under conditions where the effect of surrounding light on the graphene-on-oxide sample is minimum and allows rapid identification of the various graphene layers. The study additionally addresses the functionality of the proposed methodology with nonhomogeneous lighting conditions, showcasing successful prediction of graphene layers from images that are lower in quality compared to typically published in literature. In all, the proposed methodology opens up the possibility for the non-destructive identification of graphene layers from optical images by utilizing a new and versatile method that is quick, inexpensive, and works well with fewer images that are not necessarily of high quality.
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CVD Synthesis of MoS2 Using a Direct MoO2 Precursor: A Study on the Effects of Growth Temperature on Precursor Diffusion and Morphology Evolutions
(2023-07-01)
Somphonsane, Ratchanok
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Chiawchan, Tinna
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Bootsa-ard, Waraporn
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Ramamoorthy, Harihara
In this study, the influence of growth temperature variation on the synthesis of MoS<inf>2</inf> using a direct MoO<inf>2</inf> precursor was investigated. The research showed that the growth temperature had a strong impact on the resulting morphologies. Below 650 °C, no nucleation or growth of MoS<inf>2</inf> occurred. The optimal growth temperature for producing continuous MoS<inf>2</inf> films without intermediate-state formation was approximately 760 °C. However, when the growth temperatures exceeded 800 °C, a transition from pure MoS<inf>2</inf> to predominantly intermediate states was observed. This was attributed to enhanced diffusion of the precursor at higher temperatures, which reduced the local S:Mo ratio. The diffusion equation was analyzed, showing how the diffusion coefficient, diffusion length, and concentration gradients varied with temperature, consistent with the experimental observations. This study also investigated the impact of increasing the MoO<inf>2</inf> precursor amount, resulting in the formation of multilayer MoS<inf>2</inf> domains at the outermost growth zones. These findings provide valuable insights into the growth criteria for the effective synthesis of clean and large-area MoS<inf>2</inf>, thereby facilitating its application in semiconductors and related industries.
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Low-Cost Instrument for the Versatile Measurement of Spin Caloritronic Phenomena: Spin Seebeck Effect, Anisotropic Magnetoresistance, Anomalous Hall Effect, and Anomalous Nernst Effect
(2023-01-01)
Pongophas, Ekkarat
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Infahsaeng, Yingyot
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Maiaugree, Wasan
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Phumying, Santi
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Pattanakul, Rungrueang
In this article, we report on a low-cost instrument for the versatile measurement of spin caloritronics phenomena such as the spin Seebeck effect (SSE), anomalous Nernst effect (ANE) anisotropic magnetoresistance (AMR), and anomalous Hall effect (AHE). Solenoid coils provide a uniform variable magnetic field while the sample was sandwiched between thermal baths and measured in a vacuum chamber. Our results show excellent magnetic field uniformity (±0.37 mT) within the magnet gap and high stability of the generated temperature difference (±0.07 K). For verifying the effectiveness of our instrument, Yttrium Iron garnet (YIG)/Co structure was used to measure the SSE, AMR, and AHE, while a SiO2/Co structure was used for measuring the ANE. Our SSE measurements of the YIG/Co structure were found to be comparable with that of a commercially available instrument. We can therefore conclude that our low-cost and versatile instrument can be used to effectively observe spin Caloritronics phenomena.

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