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Item type:Publication, New Zero Power Memristor Emulator Model and Its Application in Memristive Neural Computation(2023-01-01) ;Kumar, Prashant ;Srivastava, Pushkar ;Ranjan, Rajeev KumarWe present here a simple three P-type MOSFET-based grounded memristor emulator model. The model is designed to achieve zero static power dissipation and is done so by eliminating the external DC supply i.e., no DC bias. The proposed memristor emulator model has extremely low dynamic power dissipation as well which comes to around 175 nW i.e., ∼ 67% improvement compared to recent work. A mathematical analysis is carried out to present the relevance of this design. Simulations were done on Cadence Virtuoso 90 nm technology node and fingerprints of the proposed memristor emulator were obtained. The layout area occupied by the model is approx 1154.69 μ m2 and an external capacitor is connected to add tunability to the circuit. Furthermore, Monte Carlo and corner analysis validate the robust nature of the design. Besides, simulations have been experimentally verified using CD-4007 CMOS integrated circuit (IC) to make the design practically feasible. Furthermore, the design offers advantages such as extremely less overall power consumption and smaller chip area that could possibly pave the path for fabrication using standard CMOS technologies. At last, an application of the proposed model depicting in-memory computation through a memristor emulator crossbar array is presented in brief.1 - Some of the metrics are blocked by yourconsent settings
Item type:Publication, A compact floating and grounded memristor model using single active element(2022-12-01) ;Prasad, Sagar Surendra ;Kumar, Prashant ;Raj, Niranjan ;Sharma, Pankaj KumarPriyadarshini, BinduMemristor with defined operational specifications is a challenging task that promotes innovation in emulation circuit modelling. This article presents a single active block based compact memristor emulator architecture which is suitable for both floating and grounded circuit topologies. It effectively operates in incremental/decremental modes in both the configurations. The proposed model utilizes only one Differential Voltage Current Conveyor Transconductance Amplifier (DVCCTA) as an active block along with a few passive components. It discourages the use of extra sub-circuit components like multiple active blocks, summers and multipliers. The circuit is intended to work at ±1 V of dc power supply and has a power consumption of 8.74 mW. The proposed emulator model exhibits all the characteristics of an ideal memristor with an operating frequency of 12.8 MHz. It has wide working voltage range of 50–500 mV. The memristor model is built and simulated using the TSMC 0.18 μm CMOS process parameter. The reliability and effectiveness of the proposed model is verified through non-ideal, Monte-Carlo, process corner, non-volatility and temperature variation analysis. Furthermore, the memristor prototype is constructed on the breadboard using discrete ICs AD844AN and CA3080. The experimental outcome is found in accordance with the simulation. The applicability of the proposed memristor model is verified by implementing a memristor based Schmitt trigger circuit.
