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Author: search.filters.author.Sato, K.Subject: search.filters.subject.Electronic iris

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    On laterally spreading of space-charge-region in planar metal-semiconductor-metal structures
    (2003-10-01)
    Khunkhao, S.
    ;
    Yasumura, Y.
    ;
    Kitagawa, K.
    ;
    Masui, T.
    ;
    Sato, K.
    Lateral spreading along the surface of space-charge-region (SCR) of planar metal-semiconductor-metal (MSM) structures has been investigated. Planar MSM structures have been attracted much attention as viable optical sensor structures. For this purpose, the SCR of such a structure plays a key role in generating photocurrent and thus, in dc (static) and/or low frequency scheme, the wider SCR along the active surface is the better from the efficiency point of view. To study the spreading properties of the SCR along the surface of MSM structures, we prepared planar MSM structures leaving the undepleted region between the electrodes. We examined their SCR spreading through the photocurrent-bias voltage characteristics. The experimental results were compared with the numerical simulation using a quasi-1D (one-dimensional) model of such a planar structure. It was found that the change in the photocurrents is proportional to the square root of the bias applied, implying that the current varies with the lateral spreading of the SCR. Further, the value of the surface spreading of the SCR might be roughly equal to the results predicted from the numerical simulation. These results also suggest that the effective photocurrent generation is occurring principally at the very surface of the SCR. © 2003 Elsevier Ltd. All rights reserved.
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    Voltage dependence of photocurrent in metal-semiconductor-metal structures under front-illuminated conditions
    (2001-10-01)
    Niemcharoen, S.
    ;
    Kobayashi, K.
    ;
    Kimura, M.
    ;
    Sato, K.
    Bias dependence of the photocurrent in planar metal-semiconductor-metal systems under dc and ac optical illumination conditions has been examined experimentally. Making use of molybdenum-silicon-molybdenum structures with a long undepleted neutral region, we measured their dc and low frequency (100 Hz to 100 kHz) photoresponse properties. It was confirmed that, in addition to opto-electronic conversion function, these structures showed an appreciable voltage controllability of the photocurrent in the device. © 2001 Elsevier Science Ltd. All rights reserved.