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Author: search.filters.author.Sutthinet, ChalinSubject: search.filters.subject.Magnetic sensor

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    A novel dual magnetodiode for wireless sensor networks
    (2020-08-14)
    Sutthinet, Chalin
    ;
    Poyai, Amporn
    ;
    Phetchakul, Toempong
    This paper presents a new magnetodiode, the so-called dual magnetodiode, for wireless sensor application. The device is a current mode which can be integrated with a chip compatible with modern low power, low voltage integrated circuit (IC). The structure and operation are completely different from a conventional magnetodiode. The structure is composed of two p–n junctions in that one region is common and the others are split terminals for output of differential current. The underlying mechanism is carrier deflection by induced force from a magnetic field. The carriers are injected from the common region by forward bias. The defection carriers diffuse, deflect, and recombine along substrate through split terminals according to direction and density of the magnetic field linearly and symmetrically. From the comparison of complementary structure of the split cathode and the split anode structure of L<inf>D</inf> = 50 µm, the bias current 1 mA and magnetic field 0.5 T, the relative sensitivities (S<inf>R</inf>) are 11.01 and 11.19 T<sup>−</sup><sup>1</sup>, respectively. This device is a simple p–n junction structure which is compatible with all micro/nanotechnology.
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    Magnetic finfet (MAGFinFET)
    (2019-07-01)
    Pamonchom, Chanvit
    ;
    Nakachai, Rattapong
    ;
    Sutthinet, Chalin
    ;
    Poyai, Amporn
    ;
    Phetchakul, Toempong
    This paper presents magnetic sensor that uses FinFET structure. It is n channel FinFET with two separate contacts on the fin sides of drain that detects the vertical magnetic field. The gate length, fin height and fin width are 15, 15 and 5 nm, respectively. The device operates by Lorentz's force induced by magnetic field crossed perpendicular with drain current. It acts upon drain current and creates the drain differential current. The linearly dependence shows the sensitivity 181.6 nA/T, at current 1 mA. MAGFinFET is a low power and low voltage magnetic field sensor.
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    The Design of Metal-Semiconductor-Metal Structure Magnetic Sensor
    (2016-01-01)
    Sutthinet, Chalin
    ;
    Phetchakul, Toempong
    ;
    Luanatikomkul, Wittaya
    ;
    Poyai, Amporn
    This paper presents the MSM structure magnetic detector device that normally detects the electromagnetic wave. The device is special design for magnetic field detector and still detects the electromagnetic wave as normal function. The schottky diode with the split contacts structure allows us to reach this target. The device operates with the saturation current and the magnetic response is the current difference between two contacts which is injected from one metal and deflected in semiconductor toward to another metal. From the simulation result by Sentaurus TCAD, the relative sensitivity is 14.19 mT<sup>-1</sup> at the current 0.3 μA. This device is the first MSM multi-sensor for magnetic and electromagnetic wave detector.