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Magnetic finfet (MAGFinFET)
Author(s)
Date Issued
July 1, 2019
Type
Conference Paper
Abstract
This paper presents magnetic sensor that uses FinFET structure. It is n channel FinFET with two separate contacts on the fin sides of drain that detects the vertical magnetic field. The gate length, fin height and fin width are 15, 15 and 5 nm, respectively. The device operates by Lorentz's force induced by magnetic field crossed perpendicular with drain current. It acts upon drain current and creates the drain differential current. The linearly dependence shows the sensitivity 181.6 nA/T, at current 1 mA. MAGFinFET is a low power and low voltage magnetic field sensor.
Citation
Proceedings of the 16th International Conference on Electrical Engineering Electronics Computer Telecommunications and Information Technology Ecti Con 2019, 230-233, 2019