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Mesoscopic Interference of Rotated Spins in Graphene Coupled to High-Spin–Orbit-Coupling Substrates
(2025-11-05)
Yokoi, Kazushi
;
Somphonsane, Ratchanok
;
Ramamoorthy, Harihara
;
Arabchigavkani, Nargess
;
He, Keke
We explore the manifestations of spin rotation in graphene in proximity with two different types of high-spin–orbit-coupling (SOC) materials (ferromagnetic Co and nominally diamagnetic WSe<inf>2</inf>). Using weak antilocalization (WAL) as a probe of the induced rotation, we demonstrate that spin interference exhibits a highly stochastic (nonself-averaging) character in the mesoscopic limit. At low temperatures (<20 K), the spin rotation is manifested as a zero-bias peak (or zero-bias anomaly, ZBA) in the differential conductance, a feature that, as expected for WAL, is suppressed by fairly modest magnetic fields (<∼10<sup>2</sup>mT). The ZBA moreover exhibits a stochastic variation when a gate voltage is used to sweep the Fermi level through the graphene bands, with ranges for which the antilocalization is either prominent or strongly suppressed. This mesoscopic character is exhibited by both of the studied systems, whose ZBA is also damped in similar fashion with increasing temperature. We thus provide fundamental insight into the nonensemble-averaged (nonself-averaged) character of spin interference in mesoscopic systems with strong SOC and, more specifically, into how the details of spin rotation are impacted by external gating. This understanding may ultimately enable the efficient modulation of spin currents in future spintronic devices.
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Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene
(2023-12-01)
Nathawat, Jubin
;
Mansaray, Ishiaka
;
Sakanashi, Kohei
;
Wada, Naoto
;
Randle, Michael D.
Stacking of graphene with hexagonal boron nitride (h-BN) can dramatically modify its bands from their usual linear form, opening a series of narrow minigaps that are separated by wider minibands. While the resulting spectrum offers strong potential for use in functional (opto)electronic devices, a proper understanding of the dynamics of hot carriers in these bands is a prerequisite for such applications. In this work, we therefore apply a strategy of rapid electrical pulsing to drive carriers in graphene/h-BN heterostructures deep into the dissipative limit of strong electron-phonon coupling. By using electrical gating to move the chemical potential through the “Moiré bands”, we demonstrate a cyclical evolution between metallic and semiconducting states. This behavior is captured in a self-consistent model of non-equilibrium transport that considers the competition of electrically driven inter-band tunneling and hot-carrier scattering by strongly non-equilibrium phonons. Overall, our results demonstrate how a treatment of the dynamics of both hot carriers and hot phonons is essential to understanding the properties of functional graphene superlattices.
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Transient Response of h-BN-Encapsulated Graphene Transistors: Signatures of Self-Heating and Hot-Carrier Trapping
(2019-02-22)
Nathawat, Jubin
;
Zhao, Miao
;
Kwan, Chun Pui
;
Yin, Shenchu
;
Arabchigavkani, Nargess
We use transient electrical measurements to investigate the details of self-heating and charge trapping in graphene transistors encapsulated in hexagonal boron nitride (h-BN) and operated under strongly nonequilibrium conditions. Relative to more standard devices fabricated on SiO <inf>2</inf> substrates, encapsulation is shown to lead to an enhanced immunity to charge trapping, the influence of which is only apparent under the combined influence of strong gate and drain electric fields. Although the precise source of the trapping remains to be determined, one possibility is that the strong gate field may lower the barriers associated with native defects in the h-BN, allowing them to mediate the capture of energetic carriers from the graphene channel. Self-heating in these devices is identified through the observation of time-dependent variations of the current in graphene and is found to be described by a time constant consistent with expectations for nonequilibrium phonon conduction into the dielectric layers of the device. Overall, our results suggest that h-BN-encapsulated graphene devices provide an excellent system for implementations in which operation under strongly nonequilibrium conditions is desired.
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Electrically Inert h-BN/Bilayer Graphene Interface in All-Two-Dimensional Heterostructure Field Effect Transistors
(2018-08-29)
Uwanno, Teerayut
;
Taniguchi, Takashi
;
Watanabe, Kenji
;
Nagashio, Kosuke
Bilayer graphene field effect transistors (BLG-FETs), unlike conventional semiconductors, are greatly sensitive to potential fluctuations because of the charged impurities in high-k gate stacks because the potential difference between two layers induced by the external perpendicular electrical filed is the physical origin behind the band gap opening. The assembly of BLG with layered h-BN insulators into a van der Waals heterostructure has been widely recognized to achieve the superior electrical transport properties. However, the carrier response properties at the h-BN/BLG heterointerface, which control the device performance, have not yet been revealed because of the inevitably large parasitic capacitance. In this study, the significant reduction of potential fluctuations to ∼1 meV is achieved in an all-two-dimensional heterostructure BLG-FET on a quartz substrate, which results in the suppression of the off-current to the measurement limit at a small band gap of ∼90 meV at 20 K. By capacitance measurement, we demonstrate that the electron trap/detrap response at such heterointerface is suppressed to undetectable level in the measurement frequency range. The electrically inert van der Waals heterointerface paves the way for the realization of future BLG electronics applications.

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