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A DTMOS-based temperature sensor with an inaccuracy of ±0.25°C (3σ) from -20°C to 85°C
(2023-01-01)
Khanpeth, Rom
;
Kongpoon, Metha
;
Thanachayanont, Apinunt
This paper describes the design of a low-power temperature sensor in a 0.18-μm CMOS technology. The proposed temperature sensor employs the so-called 'dynamic threshold MOS (DTMOS)"diode-connected transistors as the temperature sensing devices. Process spread of the MOSFET threshold voltage is compensated by using the 2-transistor (2T) voltage reference to generate the bias current sources. A charge-balancing delta-sigma $(\Delta \Sigma)$ analog-to-digital converter (ADC) is used to obtain the digital representation of temperature values. The DTMOS temperature sensor core and the ADC operate with 1 V power supply voltages. The ADC operates with a 64- kHz clock frequency and each temperature conversion time is 32ms. After a single-point temperature trimming and a linear fit, the proposed circuit achieves a maximum inaccuracy of ±0.25°C (3σ) across all process corners and the temperature range of -20°C to 85°C, while consuming 8.1 μW.
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Improvement of Electrical Bio-Impedance Measurement: Mixed Signal Approach
(2023-01-01)
Sribua, Phongpitch
;
Wisayataksin, Sumek
;
Thanachayanont, Apinunt
This article deploys a 5-level shorten rectangular wave technique to measure lock-in electrical bio-impedance (EBI) in medical diagnosis. The new shorten rectangular EBI signal has better properties in eliminating odd harmonics compared to the conventional 3-level shorten rectangular wave technique. The results show that the measurement errors in the 3-component EBI are reduced about 0.3% for R, X, Z and 3% for Phase(Φ) when the 5-level signal is used instead 3-level signal.
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Design procedure for noise and power optimisation of CMOS folded-cascode operational transconductance amplifier based on the inversion coefficient
(2022-05-01)
Thanachayanont, Apinunt
This paper describes a design procedure that optimises for noise and power dissipation of CMOS folded-cascode operational transconductance amplifier. The proposed design procedure is derived based on the unified EKV MOSFET equation and employs the inversion coefficient and transconductance efficiency of MOSFET as the essential design parameters. Key specifications of operational amplifier and CMOS process parameters are used with the proposed procedure to calculate the circuit parameters. A MATLAB routine is written to execute the design steps and MATLAB simulations are carried out to show how the circuit parameters are affected by the noise requirements. Finally, transistor-level circuit simulations are performed with 0.13 μm CMOS process parameters to validate the efficacy of the proposed design procedure.
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A Logarithmic Level-Crossing ADC with Fixed Comparison Window
(2022-01-01)
Sirimasakul, Silar
;
Thanachayanont, Apinunt
This paper describes the design and realization of a logarithmic level-crossing analog-to-digital converter with fixed comparison window. The proposed circuit comprises two comparators, a logarithmic charge-sharing digital-to-analog converter, a control logic circuit, and an up/down counter. The circuit is designed and simulated with process parameters from a 0.18 μm CMOS technology and a 1.8 V power supply voltage. Simulation results showed that the overall circuit exhibited the minimum resolution of 3.9mV and the maximum INL and DNL errors of -0.17LSB and -0.09LSB, respectively.
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Message from TPC Chairs
(2020-11-16)
Okada, Minoru
;
Thanachayanont, Apinunt
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Message ChairsMessage from Technical Program Co-Chairs
(2019-11-01)
Thanachayanont, Apinunt
;
Sawigun, Chutham
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Message from Technical Program Co-Chairs
(2019-11-01)
Thanachayanont, Apinunt
;
Sawigun, Chutham
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A 1-V CMOS Low-Power Resistor-Based Temperature Sensor for Human Body Temperature Monitoring
(2019-06-01)
Rajit, Nutcha
;
Thanachayanont, Apinunt
This paper describes the design and realisation of a CMOS fully-integrated low-power resistor-based temperature sensor for human body temperature monitoring application. The temperature sensing element is realised by an on-chip fully-differential RC filter, driven by a temperature-independent square-wave reference voltage. The fully-differential output voltages of the filter exhibit the temperature-dependent charging and discharging times. A simple voltage comparator is used to compare the filter output voltages and measure the temperature-dependent crossing time. The comparator output voltage is compared with the reference voltage by using an XOR gate, of which the output is a squarewave with a temperature-dependent duty cycle. The temperature variation is measured by calculating the duty cycle or the average DC output value of the XOR output voltage. The proposed temperature sensor was designed and simulated by using process parameters from a standard 0.18-mu m CMOS technology. The overall circuit dissipates 6.96mu W from a single 1-V power supply voltage. Extensive process-corner simulations showed that the proposed circuit could achieve the maximum temperature error of less than ±0. 05 °C over the temperature range of 25°C-45°C.
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Editorial: A message from the new editor-in-chief
(2019-02-01)
Thanachayanont, Apinunt
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Sub-30 ppm/oC high-frequency temperature-compensated CMOS relaxation oscillator
(2018-07-02)
Sakphrom, Siraporn
;
Limpiti, Thunyawat
;
Wichaipanich, Noraset
;
Thanachayanont, Apinunt
This paper describes the design and realization of a high-frequency temperature-compensated CMOS relaxation oscillator in a 0.35-µm CMOS technology. The proposed oscillator employs the current-controlled topology with a resistive source-degeneration transconductor and a current comparator in order to achieve high oscillation frequency and low power dissipation. Temperature compensation of the oscillation frequency is achieved by simulation results show that, at a nominal oscillation frequency of 32.48 MHz, the proposed oscillator exhibited a temperature coefficient of less than 28.41 ppm/oC over a temperature range of -40oC to +120oC, while consuming 241.5 µW from a 2.5-V single power supply voltage.

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