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Author: search.filters.author.Thiwawong, ThutiyapornSubject: search.filters.subject.Nanoparticles

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    Flexible and fully transparent WORM memory devices based on Ag nanoparticles blended with poly(ethylene-co-vinyl acetate)
    (2019-12-01)
    Onlaor, Korakot
    ;
    Thiwawong, Thutiyaporn
    ;
    Tunhoo, Benchapol
    Silver nanoparticles (Ag NPs) blended with poly(ethylene-co-vinyl acetate) (EVA) were used as an active layer to fabricate flexible and fully transparent memory devices by using the spin-coating method followed by the thermal roll lamination technique with the structure of ITO/EVA:Ag NPs/ITO. The devices exhibited a non-volatile write-once-read-many-times (WORM) memory type and possessed current bi-stability with ON/OFF current ratio within the range of 10<sup>4</sup>-10<sup>5</sup> at a reading voltage of +1 V. The data continuous read operations reached more than 10 h, which revealed the stability of the memory devices over a long period of time. The conduction mechanisms of the memory device could be explained by theoretical models and proposed by electron trapping at the trapping center of Ag NPs inside the EVA matrix. In addition, the memory device showed a fast response of 231 ns and was fully transparent with maximum transmittance of the device at 83.2%. Further, the devices could be operated under the bending condition of more than 0.83% strain.
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    Multilevel conductance switching and carrier transport mechanisms of memory devices based on an ITO/PVK:Ag nanoparticles/Al structure
    (2018-01-25)
    Onlaor, Korakot
    ;
    Thiwawong, Thutiyaporn
    ;
    Tunhoo, Benchapol
    Multilevel conductance switching was achieved using silver nanoparticles (Ag NPs) embedded in poly(9-vinylcarbazole) (PVK) with a structure of ITO/PVK:Ag NPs/Al. The current-voltage (I-V) curves of the memory devices at low reading voltages showed three distinguished states of current. The memory devices exhibited non-volatile rewritable memory characteristics. The carrier transport mechanisms of the devices in each state were analyzed by theoretical models based on the experimental I-V data. In addition, retention time measurements showed clearly three current states with good data retention properties. From the retention times test, the average values of ON/OFF, ON/intermediate (INTERM) and INTERM/OFF current ratios of the memory devices were 1.7 × 10<sup>6</sup>, 3.5 × 10<sup>2</sup> and 5.0 × 10<sup>3</sup>, respectively.
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    Bi-stable switching behaviors of ITO/EVA:ZnO NPs/ITO transparent memory devices fabricated using a thermal roll lamination technique
    (2016-04-01)
    Onlaor, Korakot
    ;
    Thiwawong, Thutiyaporn
    ;
    Tunhoo, Benchapol
    This research reported the transparent non-volatile write-once-read-many-times (WORM) memory behaviors of memory devices based on zinc oxide nanoparticles (ZnO NPs) embedded in an insulating poly(ethylene-co-vinyl acetate) (EVA), sandwiched between two ITO-coated flexible polyethylene naphthalate (PEN) substrates. The memory devices were fabricated employing a thermal roll lamination technique with the laminated-structure of PEN/ITO/EVA:ZnO NPs/ITO/PEN. The average transmittance of the laminated memory device was over 70% for an optical visible range of 400-800 nm. The maximum ON/OFF current ratio for the memory device was about 10<sup>3</sup>. In addition, a reliability study for continuous read operations in a long time memory device is presented. The conductance switching mechanisms of the laminated memory device were analyzed using theoretical models on the basis of the experimental data.