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Author: search.filters.author.Tubtimtae, AuttasitSubject: search.filters.subject.Copper telluride

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    Effect of annealing process on the properties of undoped and manganese2+-doped co-binary copper telluride and tin telluride thin films
    (2018-04-15)
    Kladkaew, Meaunfun
    ;
    Samranlertrit, Norasate
    ;
    Vailikhit, Veeramol
    ;
    Teesetsopon, Pichanan
    ;
    Tubtimtae, Auttasit
    The binary semiconductor materials Cu<inf>1.81</inf>Te and SnTe materials, without and with manganese (Mn<sup>2+</sup>) doping, were prepared by dropping a Cu-Sn-Te solution on a commercial glass substrate to fabricate a co-binary thin film. The characteristics, optical, and electrical properties of undoped and Mn<sup>2+</sup>-doped Cu<inf>1.81</inf>Te/SnTe thin films were investigated with variations in the annealing process. The XRD results confirmed the films consisted of the co-binary orthorhombic phase materials Cu<inf>1.81</inf>Te and SnTe, and that for all annealing temperatures from 50 to 400 °C an amorphous structure became prevalent in the Mn<sup>2+</sup>-incorporated co-binary thin films. The optical parameters and electrical performance varied with the annealing temperatures and Mn<sup>2+</sup> doping, showing alterations in the properties of the co-binary film. These co-binary thin films have feasibility for real applications in surface analysis, electro-optical materials, solar selective surfaces, and photovoltaic thermal devices.
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    Effective performance for undoped and boron-doped double-layered nanoparticles-copper telluride and manganese telluride on tungsten oxide photoelectrodes for solar cell devices
    (2016-11-01)
    Srathongluan, Pornpimol
    ;
    Vailikhit, Veeramol
    ;
    Teesetsopon, Pichanan
    ;
    Choopun, Supab
    ;
    Tubtimtae, Auttasit
    This work demonstrates the synthesis of a novel double-layered Cu<inf>2−x</inf>Te/MnTe structure on a WO<inf>3</inf> photoelectrode as a solar absorber for photovoltaic devices. Each material absorber is synthesized using a successive ionic layer adsorption and reaction (SILAR) method. The synthesized individual particle sizes are Cu<inf>2−x</inf>Te(17) ∼5–10 nm and MnTe(3) ∼2 nm, whereas, the aggregated particle sizes of undoped and boron-doped Cu<inf>2−x</inf>Te(17)/MnTe(11) are ∼50 and 150 nm, respectively. The larger size after doping is due to the interconnecting of nanoparticles as a network-like structure. A new alignment of the energy band is constructed after boron/MnTe(11) is coated on boron/Cu<inf>2−x</inf>Te nanoparticles (NPs), leading to a narrower E<inf>g</inf> equal to 0.58 eV. Then, the valence band maximum (VBM) and conduction band minimum (CBM) with a trap state are also up-shifted to near the CBM of WO<inf>3</inf>, leading to the shift of a Fermi level for ease of electron injection. The best efficiency of 1.41% was yielded for the WO<inf>3</inf>/boron-doped [Cu<inf>2−x</inf>Te(17)/MnTe(11)] structure with a photocurrent density (J<inf>sc</inf>) = 16.43 mA/cm<sup>2</sup>, an open-circuit voltage (V<inf>oc</inf>) = 0.305 V and a fill factor (FF) = 28.1%. This work demonstrates the feasibility of this double-layered structure with doping material as a solar absorber material.