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Author: search.filters.author.Tubtimtae, AuttasitSubject: search.filters.subject.Tin manganese telluride

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    Effect of low thermal treatment temperatures on the morphological, optical and electrical properties of Sn1-xMnxTe nanocomposite films incorporated with indium cations
    (2019-12-01)
    Rukcharoen, Nuengruethai
    ;
    Tubtimtae, Auttasit
    ;
    Vailikhit, Veeramol
    ;
    Teesetsopon, Pichanan
    ;
    Kitisripanya, Nareerat
    Amorphous chalcogenide semiconductors have advantageous optical and electrochemical properties, but the influence of the thermal treatment temperature on these properties is not clearly understood. In this study, In<sup>3+</sup>-incorporated Sn<inf>1-x</inf>Mn<inf>x</inf>Te nanocomposite films were prepared on commercial glass substrates using a solution-based doctor-blading method and low thermal treatment temperatures. The effect of the thermal treatment temperature (50–200 °C) on the optical and electrical properties of the nanocomposite films was investigated. X-ray diffraction results confirmed that an amorphous nanocomposite film was formed at each thermal treatment temperature. However, variation in the optical parameters and electrical performance of the nanocomposite films with the thermal treatment temperature indicated that this temperature should not exceed 150 °C. Optimization of the thermal treatment temperature improved the light-harvesting ability of the nanocomposite films and enhanced the polarization of the incident radiation. These phenomena were caused by an increase in atomic oscillations associated with higher dipole moments in the films. The nanocomposite films subjected to thermal treatment at temperatures below 150 °C also exhibited the highest electrical conductivity. These results will allow the synthesis of improved materials for applications in solar selective surfaces and electro-optical, photovoltaic-thermal, and sensor devices.
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    Effective properties of undoped and Indium3+-doped tin manganese telluride (Sn1 − xMnxTe) nanoparticles via using a chemical bath deposition route
    (2017-06-09)
    Boon-on, Patsorn
    ;
    Tubtimtae, Auttasit
    ;
    Vailikhit, Veeramol
    ;
    Teesetsopon, Pichanan
    ;
    Choopun, Supab
    Tin manganese telluride nanoparticles (Sn<inf>1−x</inf>Mn<inf>x</inf>Te NPs) were first synthesized on a niobium pentoxide (Nb<inf>2</inf>O<inf>5</inf>) film using a chemical bath deposition (CBD) route. An individual particle size before and after indium (In<sup>3+</sup>) doping of ∼70–150 nm was investigated with stoichiometric formation of the SnMnTe phase. Furthermore, a cubic or rocksalt structure of the Sn<inf>0.938</inf>Mn<inf>0.062</inf>Te phase was also kept incorporated in the structure. The plotted energy band gaps for undoped and In<sup>3+</sup>-doped samples were 2.17 and 1.83 eV, respectively. The reduction of photoluminescence (PL) spectra after In<sup>3+</sup> doping, while the indium dopant acted as a trap state incorporated in Sn<inf>1−x</inf>Mn<inf>x</inf>Te NPs, showed enhanced charge separation and reduced charge recombination, which resulted in a higher charge density trapped in the conduction band of Nb<inf>2</inf>O<inf>5</inf> and was also confirmed by the result of anodic peaks in the cyclic voltammetry. These results suggest new possibilities in optoelectronic and electrochemical devices.