Bismuth telluride (Bi <inf>2</inf> Te <inf>3</inf> ) thin films have been deposited onto polyimide sheet substrates by direct-current (DC) magnetron sputtering at different powers and their microstructure, composition, and electrical and thermoelectrical properties studied. The experimental results indicated that the sputtering power was the key parameter determining their thermoelectric properties. X-ray diffraction analysis confirmed the highly (015) preferred orientation of the films. The Te content and grain size depended on the sputtering power. The power factor of Bi <inf>2</inf> Te <inf>3</inf> deposited by DC sputtering at power of 60 W was comparable to that obtained for highly (00l) Bi <inf>2</inf> Te <inf>3</inf> thin film.
