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    Effective properties of undoped and Indium3+-doped tin manganese telluride (Sn1 − xMnxTe) nanoparticles via using a chemical bath deposition route
    (2017-06-09)
    Boon-on, Patsorn
    ;
    Tubtimtae, Auttasit
    ;
    Vailikhit, Veeramol
    ;
    Teesetsopon, Pichanan
    ;
    Choopun, Supab
    Tin manganese telluride nanoparticles (Sn<inf>1−x</inf>Mn<inf>x</inf>Te NPs) were first synthesized on a niobium pentoxide (Nb<inf>2</inf>O<inf>5</inf>) film using a chemical bath deposition (CBD) route. An individual particle size before and after indium (In<sup>3+</sup>) doping of ∼70–150 nm was investigated with stoichiometric formation of the SnMnTe phase. Furthermore, a cubic or rocksalt structure of the Sn<inf>0.938</inf>Mn<inf>0.062</inf>Te phase was also kept incorporated in the structure. The plotted energy band gaps for undoped and In<sup>3+</sup>-doped samples were 2.17 and 1.83 eV, respectively. The reduction of photoluminescence (PL) spectra after In<sup>3+</sup> doping, while the indium dopant acted as a trap state incorporated in Sn<inf>1−x</inf>Mn<inf>x</inf>Te NPs, showed enhanced charge separation and reduced charge recombination, which resulted in a higher charge density trapped in the conduction band of Nb<inf>2</inf>O<inf>5</inf> and was also confirmed by the result of anodic peaks in the cyclic voltammetry. These results suggest new possibilities in optoelectronic and electrochemical devices.
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    Investigations on chemically deposited Cd1-xZnxS thin films with low Zn content
    (2005-12-01)
    Gaewdang, Ng
    ;
    Gaewdang, T.
    Thin films of Cd<inf>1-x</inf>Zn<inf>x</inf>S (0 ≤ x ≤ 0.8) were deposited on glass substrates by the chemical bath deposition technique. The as-deposited films were exposed to a stream of slowly flowing nitrogen at annealing temperature ranging 100-500 °C. XRD patterns of as-deposited Cd<inf>1-x</inf>Zn<inf>x</inf>S over all mixture ratio values showed the cubic zincblende structure of which reflection peaks associated to (111), (220) and (311) planes were clearly identified. However, XRD characteristics of hexagonal wurtzite structure appeared at annealing temperature beyond 400 °C. From scanning electron microscope, the as-deposited films were formed by different sizes of clusters of grains of which average grain size smaller than 50 nm was observed. The increase in mixture ratio value in the starting solution was found to produce a decrease in the grain size. Energy gap value of annealed films, which is obtained from optical transmission measurements, seems to shift to lower energy as the annealing temperature increases. Electrical sheet resistance of the films, performed in the darkness and under illumination conditions by using a halogen lamp, as a function of annealing temperature was also investigated. The variation of energy gap of thin films with annealing temperature was discussed by employing quantum size effect phenomena. © 2005 Elsevier B.V. All rights reserved.
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