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Optimization of electrical and optical properties of ITO thin films by annealing in air and nitrogen
(2022-01-01)
Torasa, Chonmapat
;
Srithanachai, Itsara
This paper will investigation the optimization of ITO thin films by various thin films deposited time with annealing under air and nitrogen environment. ITO will use for transparent electrode of photodetector that require high transparent and low resistivity. Thin films prepare by using RF sputtering technique by various sputter times 5, 15, 30 and 60 mins then annealing under air and nitrogen for 10 mins, 300 °C. Transparent of thin films after prepared at thickness around 1,166 µm and annealing under nitrogen environment show high transparent 89.8% at wavelength 1,170 nm and low resistivity 2.1 × 10−5 ohm-cm. From the results of transparent and resistivity will get optimize thickness of thin films that use for transparent electrode of photodetector. By optimize thickness of ITO thin films is 413 nm with 87.6% transparent and 0.8 × 10−3 ohm-cm resistivity.
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RSM Base Study of the Effect of Argon Gas Flow Rate and Annealing Temperature on the [Bi]:[Te] Ratio and Thermoelectric Properties of Flexible Bi-Te Thin Film
(2017-05-01)
Nuthongkum, Pilaipon
;
Sakulkalavek, Aparporn
;
Sakdanuphab, Rachsak
Bismuth telluride (Bi-Te) thin films coated on a flexible substrate were prepared by RF (radio frequency) magnetron sputtering technique. A response surface methodology based on a central composite design was used to optimize deposition parameters, including the amount of Ar gas flow rate (100.5–106.5 sccm) in the sputtering process and the annealing temperature (250–320°C) for stoichiometric Bi<inf>2</inf>Te<inf>3</inf> thin films. The mathematical model was validated and proven to be statistically sufficient and accurate in predicting a response (Te content). The stoichiometric Bi<inf>2</inf>Te<inf>3</inf> thin films can be prepared on terms appropriate to the Ar flow rate and annealing temperature under several conditions, such as at the Ar flow rate of 103.5 sccm followed by an annealing temperature of 285°C. The characterization of the crystal structure and surface morphology of selected samples with different [Bi]:[Te] content were analyzed by x-ray diffraction (XRD) and a field emission scanning electron microscope, respectively. The XRD spectra showed Bi-Te and Bi<inf>2</inf>Te<inf>3</inf> structures that corresponded with the ratio of [Bi]:[Te]. The Seebeck coefficient and electrical conductivity were simultaneously measured at room temperature and up to 300°C by a direct current four-terminal method. The maximum power factor of the stoichiometric Bi<inf>2</inf>Te<inf>3</inf> thin film was 61×10−5 W/K2m at 243°C.
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Oxygen gas-timing control for variety properties of sputtered-ZnO
(2010-02-05)
Limwichean, K.
;
Porntheeraphat, S.
;
Bunjongpru, W.
;
Panprom, P.
;
Pankiew, A.
In this report, we present sputtered zinc oxide (ZnO) thin films grown with different argon (Ar) and oxygen (O<inf>2</inf>) gas-timing sequence. Metallic zinc (Zn) with 5N-purity was used as a sputtering target, while Ar and O <inf>2</inf> of 6N-purity were used as the bombard and reactive gases, respectively. The crystalline orientation, surface morphology, chemical composition, optical and electrical properties of deposited ZnO thin films were determined by XRD,AFM and UV-VIS measurement, respectively. The XRD result implied that deposition ZnO thin films at different O<inf>2</inf> gas-timing control corresponded to the (002) plane of hexagonal ZnO structure at 2θ = 34.4°. Furthermore, when the reactive time of O<inf>2</inf> was increased, the transmittance of ZnO thin films exhibited the energy gap increase from ∼2.95 to ∼3.18 eV, whereas the surface roughness was found to decrease. Finally, ZnO thin films were oxidized after the deposition. © (2010) Trans Tech Publications.
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Oxygen control on nanocrystal-AION films by reactive gas-timing technique R.F. magnetron sputtering and annealing effect
(2008-12-01)
Bunjongpru, W.
;
Pomtheeraphat, S.
;
Somwang, N.
;
Khomdet, P.
;
Hruanun, C.
The AlON films grown on Si(100) substrates by using radio frequency (r.f.) magnetron sputtering from high purity aluminum (99.999% Al) target with a novel reactive gas-timing technique. The 100 nm thick of AlON films were deposited with 200 watts r.f. power and the substrate temperature is maintained at room temperature by the technique of gas-timing which varying flow-in sequence of high purity of Ar (99.999%) and N<inf>2</inf> (99.9999%) gases fed into the sputtering chamber at 10:90 (sec) ratio. The composition and crystal orientation of AlON films affected by gas-timing of Ar and N<inf>2</inf> were analyzed by Auger Electron Spectroscopy (AES) and Xray diffraction (XRD). The oxygen atoms revealed by AES formed into a corporation in films was studied. This suggests that the oxygen contamination formed as A10<inf>x</inf>N<inf>y</inf> compound may due to the residual oxygen in base pressure of 10-7 mbar and higher reactivity of oxygen in the reactor compared to nitrogen. The gas-timing technique used in the sputtering growth system shows the advantage of the oxygen quantity control, while the general sputtering process (without gas-timing technique) shows an increase of the oxygen composition depended on film thickness. The characterizations results clearly indicate that the gas-timing r.f. magnetron sputtering technique plays an important role to control the incorporation of oxygen and to form the nanocrystalaluminum oxynitride films which very attractive for various sensors applications. © 2008 Trans Tech Publications, Switzerland.
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Preparation and properties indium tin-oxide thin films by RF sputtered for photodetectors
(2008-01-01)
Srithanachai, I.
;
Nutaman, K.
;
Rerkratn, A.
;
Niemcharoen, S.
;
Supadech, S.
This paper descript studying and preparation indium-tin oxide (ITO) thin film from method 90 wt.% ln<inf>2</inf>O<inf>3</inf> and 10 wt.% SnO<inf>2</inf> formula target with 99.99% purity on glass slide by RF reactive sputtering method at room temperature. This paper, sputtering time 5, 15, 30 and 60 mins. Thin films ITO were measured crystallization, optical and electrical characteristic by an X-ray diffractometer (XRD), scan electron microscopy (SEM) , Four Point Probe and UV-VIS spectrophotometry. The results found that thin films which made from RF sputtering method had a high crystallization, order arrangement grain. Strong peak of XRD (400) and (441), low resistivity are 2.2 × 10-3 4.4 × 10-3 1 × 10-3 and 7 × 10-4 β-cm, transmittance are 82%, 84%, 87% and 89%, respectively. The overall experimental results identify that fabricated thin films ITO have good properties and is suitable for transparent electrode application. The ultimate goal is developing schottky photodetector. © 2008 Trans Tech Publications, Switzerland.

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