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Portable Deep Learning-Driven Ion-Sensitive Field-Effect Transistor Scheme for Measurement of Carbaryl Pesticide
(2022-05-01)
Houngkamhang, Nongluck
;
Phasukkit, Pattarapong
This research proposes a multiple-input deep learning-driven ion-sensitive field-effect transistor (ISFET) scheme to predict the concentrations of carbaryl pesticide. In the study, the carbaryl concentrations are varied between 1 × 10−7–1 × 10−3 M, and the temperatures of solutions between 20–35◦C. To validate the multiple-input deep learning regression model, the proposed ISFET scheme is deployed onsite (a field test) to measure pesticide concentrations in the carbaryl-spiked vegetable extract. The advantage of this research lies in the use of a deep learning algorithm with an ISFET sensor to effectively predict the pesticide concentrations, in addition to improving the prediction accuracy. The results demonstrate the very high predictive ability of the proposed ISFET scheme, given an MSE, MAE, and R2 of 0.007%, 0.016%, and 0.992, respectively. The proposed multiple-input deep learning regression model with signal compensation is applicable to a wide range of solution temperatures which is convenient for onsite measurement. Essentially, the proposed multiple-input deep learning regression model could be adopted as an effective alternative to the conventional statistics-based regression to predict pesticide concentrations.
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Modification of polyvinyl chloride ion-selective membrane for nitrate ISFET sensors
(2020-05-15)
Chaisrirattanakua, Woraphan
;
Bunjongpru, Win
;
Pankiew, Apirak
;
Srisuwan, Awirut
;
Jeamsaksiri, Wutthinan
In this work, a Polyvinyl Chloride (PVC) ion-selective membrane was modified to detect nitrate based on Ion Selective Field Effect Transistor (ISFET) sensing technology in order to eliminate chloride interference. A modification was done with ethylenediamine solution to achieve animated PVC, which was then oxidized with sodium tungstate to form nitrone coated PVC membrane. The modified PVC was characterized using FTIR, 1H NMR, GPC, FE-SEM and EIS. The FTIR spectrum of animate PVC demonstrated -NH<inf>2</inf> bending at 1580 cm−1, NO<inf>2</inf> asymmetric stretching at 1650 cm−1 and N[sbnd]O out-of-plane deformation vibration at 837 cm−1. GPC analysis of the modified PVC showed that the PVC molecular weight was shifted to a high molecular weight. The PVC ion-selective membrane was immobilized on the ISFET to create nitrate sensors with the following characteristics. The Nitrate-Nitrogen detection limit is 1.20 ppm with linear range from 3−20 ppm at sensitivity of 56 ± 2 mV/dec. The sensor is useful for detecting small amount of nitrate in a mixed solution, which usually is the case in most situations. This sensor could be applied in many applications, such as agricultural industry, water reserve management and medical field as well.
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Application of double gate ion sensitive field effect transistor for detection of fluid flow rate in micro-channel
(2010-02-05)
Jiemsakul, T.
;
Trithaveesak, O.
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Bunjongpru, W.
;
Hruanun, C.
;
Poyai, A.
In this work a micro flow sensor, using a double gate Ion Sensitive Field Effect Transistor (ISFET) and two metal electrodes, for fluid flow rate measurement in micro-channels were fabricated and demonstrated. By the channel fabrication the molds were patterned reversely on a silicon wafer using Deep Reactive Ion Etcher (DRIE). The double gate ISFET and two metal electrodes were placed on the mold in the distance 15 millimeters. The channels were formed using polydimethylsiloxane (PDMS) from the mold with the width 1000 and 2000 micrometer and the depth of 250 micrometer. After removing PDMS from the mold the channel was bonded with glass substrate by RF plasma technique. By the verification of flow sensors working range water and one mole of sodium nitrate solution were alternated in flow channel. The fluid flow rate were compared with the flow rate from weighing. It found from the comparison that the high deviation was found at low flow rate. Furthermore, the deviation depends also on the dimension of the flow channel. © (2010) Trans Tech Publications.
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The effect of ion implantation on ISFET-sensing membrane
(2010-02-05)
Piyananjaratsri, R.
;
Bunjongpru, W.
;
Chaowicharat, E.
;
Trithaveesak, O.
;
Saeteaw, K.
This research studied the effect of ion implantation on electrical properties of ISFETs. In the experiments the sensing membrane area were implanted with 3 types of ions (Boron(B), Phosphorus(P), and Arsenic(As)). After the implantation without annealing, the IV-characteristics of Source/Drain (P-N junction) of ISFET were performed and compared with the behaviour before implantation. In addition, the response to acid-alkaline (sensitivity) of ISFET were also studied. From the results the leakage current of source-drain, P-N junction like, decreases significantly after the implantation. However, this process damaged the devices so that the response to acid-alkaline are lost. © (2010) Trans Tech Publications.
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Ultra-low-power differential ISFET/REFET readout circuit
(2009-01-01)
Thanachayanont, Apinunt
;
Sirimasakul, Silar
A novel ultra-low-power readout circuit for a pH-sensitive ion-sensitive field-effect transistor (ISFET) is proposed. It uses an ISFET/reference FET (REFET) differential pair operating in weak-inversion and a simple current-mode metal-oxide semiconductor FET (MOSFET) translinear circuit. Simulation results verify that the circuit operates with excellent common-mode rejection ability and good linearity for a single pH range from 4 to 10, while only 4 nA is drawn from a single 1 V supply voltage. © 2009 ETRI.

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