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Subject: search.filters.subject.Indium nitride

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    Chemical characterization and electrical properties of indium oxynitride grown by reactive gas-timing RF magnetron sputtering
    (2010-02-05)
    Sungthong, A.
    ;
    Khomdet, P.
    ;
    Porntheeraphat, S.
    ;
    Hruanun, C.
    ;
    Poyai, A.
    This work investigates changes in the chemical composition of InON thin films, grown by reactive gas-timing rf magnetron sputtering with different O<inf>2</inf>:N<inf>2</inf> timing ratio characterized by Auger Electron Microscope (AES), Raman Spectroscopy which are well correlated with the electrical properties of films. The existence of nitrogen and oxygen in the deposited InON thin films was revealed by AES. Two Raman active optical phonons have been clearly observed and assigned to InN E<inf>1</inf>(TO) at ∼470 cm<sup>-1</sup> and E<inf>1</inf>(LO) at ∼570 cm<sup>-1</sup> and also shifted with different O<inf>2</inf>:N<inf>2</inf> timing ratio. The carrier mobility of InON thin films was decreased when the ratio of O<inf>2</inf>:N <inf>2</inf> timing is increased. © (2010) Trans Tech Publications.
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    Investigation of oxygen contamination in indium nitride thin film by x-ray absorption fine structure
    (2010-02-05)
    Amnuyswat, K.
    ;
    Thanomngam, P.
    ;
    Sopitpan, S.
    ;
    Sungthong, A.
    ;
    Porntheerapat, S.
    Local structures of indium oxynitride (InON) nano-crystal prepared by reactive gastiming RF magnetron sputtering technique are under investigation. Since the optical properties of these InON thin films depend on gas-timing ratio, the local structure analysis is needed in order to determine the relation between the gas timing ratio and its optical properties. In this work, InON thinfilm with 30:0 seconds (N<inf>2</inf>:O<inf>2</inf>) gas-timings ratio was analyzed for its local structure using X-ray absorption fine structure (XAFS) technique in conjunction with first principle calculation. The results indicate that the crystal structure of the film is wurtzite structure which is a typical structure of InN. However from the results of Auger Electron Spectroscopy (AES), there are oxygen contents in the film. Since XAFS analysis confirmed the 4-fold local structure of Indium atom, these oxygen atoms must be substituted in nitrogen sites with slightly changing the local structure of Indium atom. The best fit of XAFS data indicated that there is an oxygen atom substituted in nitrogen site of the 4-fold indium. © (2010) Trans Tech Publications.
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    An extreme change in structural and optical properties of indium oxynitride deposited by reactive gas-timing RF magnetron sputtering
    (2008-09-30)
    Sungthong, A.
    ;
    Porntheeraphat, S.
    ;
    Poyai, A.
    ;
    Nukeaw, J.
    The indium oxynitride (InON) films were achieved by reactive RF magnetron sputtering indium target which has the purity of 99.999% with a novel reactive gas-timing technique. The structural, optical and electrical properties in a series of polycrystalline InON films affected by gas-timing of reactive N <inf>2</inf> and O <inf>2</inf> gases introduced to the chamber were observed. The X-ray photoelectron spectroscopy revealed that the oxygen content in thin films that compounded to indium and nitrogen, which increased from 10% in indium nitride (InN) to 66% in indium oxide (In <inf>2</inf> O <inf>3</inf> ) films. The X-ray diffraction peaks show that the phase of deposited films changes from InN to InON and to In <inf>2</inf> O <inf>3</inf> with an increasing oxygen timing. The hexagonal structure of InN films with predominant (0 0 2) and (0 0 4) orientation was observed when pure nitrogen is only used as sputtering gas, while InON and In <inf>2</inf> O <inf>3</inf> seem to demonstrate body-center cubic polycrystalline structures depending on gas-timing. The surface morphologies investigated from atomic force microscope of deposited films with varying gas-timing of O <inf>2</inf> :N <inf>2</inf> show indifferent. The numerical algorithm method was used to define the optical bandgap of films from transmittance results. The increasing oxygen gas-timing affects extremely to the change of crystallinity phase from InN to InON and to In <inf>2</inf> O <inf>3</inf> , the increase of optical bandgap from 1.4 to 3.4 eV and the rise of sheet resistance from 15 Ω/□ to insulator. © 2008 Elsevier B.V. All rights reserved.