Search Results

Now showing 1 - 3 of 3

Some of the metrics are blocked by your
consent settings
Optical band engineering of metal-oxynitride based on tantalum oxide thin film fabricated via reactive gas-timing RF magnetron sputtering
(2016-11-25)
Khemasiri, N.
;
Jessadaluk, S.
;
Chananonnawathorn, C.
;
Vuttivong, S.
;
Lertvanithphol, T.
In this paper, we demonstrate a novel technique, as called reactive gas-timing (RGT) RF magnetron sputtering, to control and design an optical band engineering of TaON thin films without an external heating substrate temperature and post annealing treatment process. The influence of the oxygen intervals ranged from 5 to 60 s on deposition rate, chemical composition and optical properties of TaON thin films were investigated. The chemical composition was characterized by auger electron spectroscopy (AES). The optical properties were determined by UV–Vis spectrophotometer and spectroscopic ellipsometry. The nitrogen atomic concentration of the TaON thin films deposited by RGT decreased when the oxygen gas-timing intervals increased. In addition, the RGT sputtered TaON films could be demonstrated band gaps engineering from 1.90 to 2.15 eV.
1
Some of the metrics are blocked by your
consent settings
Oxygen gas-timing control for variety properties of sputtered-ZnO
(2010-02-05)
Limwichean, K.
;
Porntheeraphat, S.
;
Bunjongpru, W.
;
Panprom, P.
;
Pankiew, A.
In this report, we present sputtered zinc oxide (ZnO) thin films grown with different argon (Ar) and oxygen (O<inf>2</inf>) gas-timing sequence. Metallic zinc (Zn) with 5N-purity was used as a sputtering target, while Ar and O <inf>2</inf> of 6N-purity were used as the bombard and reactive gases, respectively. The crystalline orientation, surface morphology, chemical composition, optical and electrical properties of deposited ZnO thin films were determined by XRD,AFM and UV-VIS measurement, respectively. The XRD result implied that deposition ZnO thin films at different O<inf>2</inf> gas-timing control corresponded to the (002) plane of hexagonal ZnO structure at 2θ = 34.4°. Furthermore, when the reactive time of O<inf>2</inf> was increased, the transmittance of ZnO thin films exhibited the energy gap increase from ∼2.95 to ∼3.18 eV, whereas the surface roughness was found to decrease. Finally, ZnO thin films were oxidized after the deposition. © (2010) Trans Tech Publications.
2
Some of the metrics are blocked by your
consent settings
Growth and characterization of zinc oxynitride thin films by reactive gas-timing RF magnetron sputtering
(2008-01-22)
Klaitabtim, Don
;
Pratontep, Sirapat
;
Nukeaw, Jiti
Nitrogen-doped zinc oxide (N:ZnO) films on glass substrates have been prepared by the reactive gas-timing rf magnetron sputtering of ZnO targets in a mixture of argon and nitrogen gases. Using this gas-timing technique, N:ZnO films were produced without any substrate heating. The nitrogen partial pressure during the sputtering process was periodically controlled by an on-off sequence. The structural and optical properties of the fabricated films were analyzed by X-ray diffraction (XRD) and optical absorption spectroscopy, respectively. The nitrogen composition of the N:ZnO films was quantified by X-ray photoelectron spectroscopy (XPS). In this study, we focused on investigating the effects of the nitrogen flow rate and the rf power on the structural properties, the nitrogen doping efficiency, and the optical band gap of N:ZnO films. A slight shift in the optical band gap to a higher energy was found when the nitrogen flow rate was increased or when the rf power was decreased. This coincides with an improvement in the crystallinity of the films. Gas-timing rf magnetron sputtering deposition is a simple method of fine-tuning material properties by slight modifications to the existing sputtering technique. © 2008 The Japan Society of Applied Physics.
1

KMITL

Browse

Filters

Settings

Sort By

Results per page

Search Results