Nukeaw, Jiti

Preferred name

Nukeaw, Jiti

Alternative Name

Nukeaw, J.

Nukeaw, Jitti

Nukeaw, Jiji

Main Affiliation

Integrated Innovative Technology

jiti.nu@kmitl.ac.th

Now showing 1 - 10 of 122

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Growth and characterization of zinc oxynitride thin films by reactive gas-timing RF magnetron sputtering
(2008-01-22)
Klaitabtim, Don
;
Pratontep, Sirapat
;
Nukeaw, Jiti
Nitrogen-doped zinc oxide (N:ZnO) films on glass substrates have been prepared by the reactive gas-timing rf magnetron sputtering of ZnO targets in a mixture of argon and nitrogen gases. Using this gas-timing technique, N:ZnO films were produced without any substrate heating. The nitrogen partial pressure during the sputtering process was periodically controlled by an on-off sequence. The structural and optical properties of the fabricated films were analyzed by X-ray diffraction (XRD) and optical absorption spectroscopy, respectively. The nitrogen composition of the N:ZnO films was quantified by X-ray photoelectron spectroscopy (XPS). In this study, we focused on investigating the effects of the nitrogen flow rate and the rf power on the structural properties, the nitrogen doping efficiency, and the optical band gap of N:ZnO films. A slight shift in the optical band gap to a higher energy was found when the nitrogen flow rate was increased or when the rf power was decreased. This coincides with an improvement in the crystallinity of the films. Gas-timing rf magnetron sputtering deposition is a simple method of fine-tuning material properties by slight modifications to the existing sputtering technique. © 2008 The Japan Society of Applied Physics.
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The innovative AlN-ISFET based pH sensor
(2008-10-06)
Bunjongpru, W.
;
Porntheeraphat, S.
;
Trithaveesak, O.
;
Somwang, N.
;
Khomdet, P.
This innovative pH-ISFET sensor used nanocrystalline-AlN thin film as ion-sensitive membrane which prepared by reactive gas-timing r.f, magnetron sputtering without heating substrate and post annealing. The technique of gas-timing r.f. magnetron sputtering purposed by us, the feeding gas is on-off controlled periodically in such a way that the deposited AlOxNy film has a quite stable composition of aluminum, nitrogen and oxygen (A1:O:N=52:18:30 %) all over the entire film. The AlN-ISFET devices were structured. The pH-sensitivity characteristics show increasing sensitivity depended on film thickness. The highest sensitivity is 54.50 mV/pH achieved from 80 nm of AlN thin film which is comparable to our previous report Si<inf>3</inf>N<inf>4</inf>-ISFET devices. © 2008 IEEE.
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Properties of CuPc/Se organics-inorganic hybrid thin films growth by electron beam evaporation technique
(2007-12-01)
Tunhoo, Benchapol
;
Thiwawong, Thutiyaporn
;
Nukeaw, Jiti
Organic and Inorganic materials with copper (II) phthalocyanine (CuPc) and selenium (Se) were deposited to implement hybrid thin Alms by multi pocket electron beam evaporation technique. Crystallization of hybrid films was performed by x-ray diffraction (XRD) spectroscopy. XRD pattern exhibits monoclinic α-phase crystallizations structure of CuPc. Influences of the CuPc thickness on the crystalline structure of selenium films were obtained. As the thickness of CuPc layer was increased to 100 nm, the hexagonal Se was observed. Optical absorption spectra were measured by UV-Visible spectrophotometer. Results of hybrid absorption spectra were revealed to absorption spectra of CuPc and Se. Surface roughness of films can confirm with XRD spectra .The surface morphology was characterized by atomic force microscope (AFM) with non-contact mode, it illustrate the point that hybrid thin films is nanocrystal structure. © 2007 IEEE.
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Organic vaporensors based on single-walled CNTs
(2006-12-01)
Chaisitsak, Sutichai
;
Chaithongrat, Buaworn
;
Nukeaw, Jiji
;
Tuantranont, Adisorn
An investigation of the influence of organic vapor (ethanol, methanol and acetone) on the characteristics of simple-structure sensors fabricated from single-walled carbon nanotube (SWCNT) thin films is reported. SWCNTs were directly deposited, by using atmospheric pressure CVD using alcohol-ferrocene mist, on the patterned Al electrodes to fabricate a sensor. It was found that the characteristic of SWCNT-based sensors depended on the depositing position in CVD reactor. The sensor response could be optimized by adjusting the depositing position along the inner quartz reactor. The sensor reproducibility could be improved by light soaking after switching to air. © 2006 IEEE.
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Metal Oxide Nanostructures Enhanced Microfluidic Platform for Efficient and Sensitive Immunofluorescence Detection of Dengue Virus
(2023-11-01)
Pormrungruang, Pareesa
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Phanthanawiboon, Supranee
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Jessadaluk, Sukittaya
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Larpthavee, Preeda
;
Thaosing, Jiraphon
Rapid and sensitive detection of Dengue virus remains a critical challenge in global public health. This study presents the development and evaluation of a Zinc Oxide nanorod (ZnO NR)-surface-integrated microfluidic platform for the early detection of Dengue virus. Utilizing a seed-assisted hydrothermal synthesis method, high-purity ZnO NRs were synthesized, characterized by their hexagonal wurtzite structure and a high surface-to-volume ratio, offering abundant binding sites for bioconjugation. Further, a comparative analysis demonstrated that the ZnO NR substrate outperformed traditional bare glass substrates in functionalization efficiency with 4G2 monoclonal antibody (mAb). Subsequent optimization of the functionalization process identified 4% (3-Glycidyloxypropyl)trimethoxysilane (GPTMS) as the most effective surface modifier. The integration of this substrate within a herringbone-structured microfluidic platform resulted in a robust device for immunofluorescence detection of DENV-3. The limit of detection (LOD) for DENV-3 was observed to be as low as 3.1 × 10<sup>−4</sup> ng/mL, highlighting the remarkable sensitivity of the ZnO NR-integrated microfluidic device. This study emphasizes the potential of ZnO NRs and the developed microfluidic platform for the early detection of DENV-3, with possible expansion to other biological targets, hence paving the way for enhanced public health responses and improved disease management strategies.
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Optical band engineering of metal-oxynitride based on tantalum oxide thin film fabricated via reactive gas-timing RF magnetron sputtering
(2016-11-25)
Khemasiri, N.
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Jessadaluk, S.
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Chananonnawathorn, C.
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Vuttivong, S.
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Lertvanithphol, T.
In this paper, we demonstrate a novel technique, as called reactive gas-timing (RGT) RF magnetron sputtering, to control and design an optical band engineering of TaON thin films without an external heating substrate temperature and post annealing treatment process. The influence of the oxygen intervals ranged from 5 to 60 s on deposition rate, chemical composition and optical properties of TaON thin films were investigated. The chemical composition was characterized by auger electron spectroscopy (AES). The optical properties were determined by UV–Vis spectrophotometer and spectroscopic ellipsometry. The nitrogen atomic concentration of the TaON thin films deposited by RGT decreased when the oxygen gas-timing intervals increased. In addition, the RGT sputtered TaON films could be demonstrated band gaps engineering from 1.90 to 2.15 eV.
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The enhancement of sensitivity and response times of PDMS-based capacitive force sensor by means of active layer modification
(2021-06-01)
Siangkhio, Yasumin
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Rangkasikorn, Adirek
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Tammarugwattana, Narin
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Kayunkid, Navaphun
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Jessadaluk, Sukittiya
In this work, sensitivity and response times of PDMS-based capacitive force sensors are enhanced via the modifications of the PDMS layer. Two modifying approaches are proposed; (i) change PDMS's (elastomer:curing agent) ratio and (ii) adding conductive polymer PEDOT:PSS into the PDMS layer. The change of PDMS (elastomer:curing agent) ratio from (10:1) to (30:1) increases the sensitivity from 0.4 0.08 to 0.72 0.23 kPa-1 (+80%) but it does not significantly affect the response/recovery times. In addition, by adding 1% wt. of PEDOT:PSS to PDMS (30:1), the further increment of sensitivity from 0.72 0.23 to 1.44 0.17 kPa-1 (+100%) and the shorter response time from 1.59 0.02 to 0.45 0.03 s (-72%) are observed. The mechanical and electrical studies reveal that the change of PDMS (elastomer:curing agent) ratio and the adding of PEDOT:PSS to PDMS layer result in the modification of PDMS's deformability and the increase of charge transportation, leading to the enhancement of sensing characteristics of the sensors.
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Preface
(2017-01-01)
Nukeaw, Jiti
;
Pecharapa, Wisanu
;
Yimnirun, Rattikorn
;
Ishihara, Keiichi N.
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UV-enhanced photodetector with nanocrystalline-TiO 2 thin film via CMOS compatible process
(2011-12-01)
Bunjongpru, W.
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Panprom, P.
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Porntheeraphat, S.
;
Meananeatra, R.
;
Jeamsaksiri, W.
This research presents nanocrystal titaniumdioxide (nanocrystal-TiO <inf>2</inf>) film deposition technique with CMOS compatible process [1] to extend the optical response bandwidth of silicon based photodetecting devices toward ultraviolet range [2]. The thin films were initially deposited as Titanium Nitride (TiN) using DC magnetron reactive sputtering system. It was then annealed under nitrogen atmosphere at 800°C. After analyzing crystal structures and surface morphology with X-ray diffraction and FE-SEM systems, it was found that the deposited thin films showed the crystal phase of TiO <inf>2</inf> oriented along (200) plane of Rutile crystal structure with 50 nm grain size and increasing with film thickness. Using electroreflectance (ER) spectroscopy measurement [3], the bandgap of nanocrystal-TiO <inf>2</inf> was revealed to be 3.16 eV. PN-heterojunction photodiodes were fabricated with Nanocrystal-TiO <inf>2</inf>/SiO <inf>2</inf>/p-Si structures. Interdigitated aluminum structures were used as electrodes. By varying the thickness of nanocrystal-TiO <inf>2</inf> film, i.e. 30, 60, and 90 nm, the devices could response further into the UV range. The absorption edge wavelength investigated by photoresponse measurement was at 275 nm and shifting to the shorter wavelength as a function of the nanocrystal-TiO <inf>2</inf> grain size due to quantum confinement phenomenon [4]. The nanocrystal-TiO <inf>2</inf>/SiO <inf>2</inf>/p-Si photodetector had dark current = 5.31nA (2V), photocurrent = 0.9 uA, rise time = 58 us, fall time = 47 us at 30 nm thickness of TiO <inf>2</inf>. © 2011 IEEE.
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Growth and characterization of novel optoelectronic materials. Based on II-VI inorganic/organic heterostructures
(2006-01-01)
Pecharapa, Wisanu
;
Keawprajak, Anusit
;
Kayunkid, Nawapun
;
Rahong, Sakon
;
Yindeesuk, Witoon
Novel optoelectronic materials based on II-VI inorganic/organic low-dimensional heterostructure were successfully grown by electron beam evaporator. The structures were based on ZnSe, tris(8-hydroxyquinoline) aluminum (Alq<inf>3</inf>) and N,N'-bis(3-methylphenyl)-N,N'-diphenyl-benzidine (TPD). The surface morphology of the structures was investigated by atomic force microscopy and field emission scanning electron microscope. The optical and electronic properties were examined by photoluminescence, photocurrent and electroreflectance spectroscopy. Photoluminescence spectra of the ZnSe/Alq <inf>3</inf>/ZnSe structure attributed to the change of exciton energy as a result of quantum confinement showed the formation of single quantum well structure. The luminescence color can be varied by changing the thickness of the Alq<inf>3</inf> layer. The other heterostructure of ZnSe/Alq<inf>3</inf>/TPD was grown on silicon substrate. The wavelength response of this structure shown by photocurrent signal ranged from 450 nm to 1100 nm. Electroreflectance features due to optical transition energy of the single quantum well of this structure were also observed. Under applied voltage, electroreflectance signals showed significant shift due to the quantum confined Stark effect.

Nukeaw, Jiti

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