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Tailoring the structural and optical properties of fabricated TiO2 thin films by O2 duty cycle in reactive gas-timing magnetron sputtering
(2023-08-01)
Chittinan, Donyawan
;
Buranasiri, Prathan
;
Lertvanithphol, Tossaporn
;
Eiamchai, Pitak
;
Tantiwanichapan, Khwanchai
Titanium dioxide (TiO<inf>2</inf>) thin films were deposited on silicon (100) and glass substrates via conventional reactive sputtering and reactive gas-timing (RGT) sputtering techniques. The duty cycle of supplied O<inf>2</inf> gas determined its effect on the properties of the TiO<inf>2</inf> films through spectroscopic ellipsometry (SE). With the best triple-layer model for SE fitting, the films' structure and optical properties were analyzed and compared. The high-resolution transmission electron microscope (HR-TEM) showed good agreement with the structure of the SE model, while the grazing-incidence X-ray diffraction (GIXRD) confirmed the crystallinity of the films. The results showed that the duty cycle was a crucial factor in the deposition rate and crystalline phase of the TiO<inf>2</inf> films. The optical reflectance (%R) spectra were measured by a UV-VIS-NIR spectrophotometer, representing anti-reflection properties at a specific wavelength related to the duty cycle. Moreover, the omnidirectional optical transmittance (Omni-T) profiles were also determined. The results showed that the transmittances (%T) of TiO<inf>2</inf> film near those specific wavelengths were enhanced over the bare glass substrate at a wide angle. In addition, photoelectron spectroscopy (PES) was used to confirm the chemical states and atomic compositions.
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Oxygen gas-timing control for variety properties of sputtered-ZnO
(2010-02-05)
Limwichean, K.
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Porntheeraphat, S.
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Bunjongpru, W.
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Panprom, P.
;
Pankiew, A.
In this report, we present sputtered zinc oxide (ZnO) thin films grown with different argon (Ar) and oxygen (O<inf>2</inf>) gas-timing sequence. Metallic zinc (Zn) with 5N-purity was used as a sputtering target, while Ar and O <inf>2</inf> of 6N-purity were used as the bombard and reactive gases, respectively. The crystalline orientation, surface morphology, chemical composition, optical and electrical properties of deposited ZnO thin films were determined by XRD,AFM and UV-VIS measurement, respectively. The XRD result implied that deposition ZnO thin films at different O<inf>2</inf> gas-timing control corresponded to the (002) plane of hexagonal ZnO structure at 2θ = 34.4°. Furthermore, when the reactive time of O<inf>2</inf> was increased, the transmittance of ZnO thin films exhibited the energy gap increase from ∼2.95 to ∼3.18 eV, whereas the surface roughness was found to decrease. Finally, ZnO thin films were oxidized after the deposition. © (2010) Trans Tech Publications.
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Chemical characterization and electrical properties of indium oxynitride grown by reactive gas-timing RF magnetron sputtering
(2010-02-05)
Sungthong, A.
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Khomdet, P.
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Porntheeraphat, S.
;
Hruanun, C.
;
Poyai, A.
This work investigates changes in the chemical composition of InON thin films, grown by reactive gas-timing rf magnetron sputtering with different O<inf>2</inf>:N<inf>2</inf> timing ratio characterized by Auger Electron Microscope (AES), Raman Spectroscopy which are well correlated with the electrical properties of films. The existence of nitrogen and oxygen in the deposited InON thin films was revealed by AES. Two Raman active optical phonons have been clearly observed and assigned to InN E<inf>1</inf>(TO) at ∼470 cm-1 and E<inf>1</inf>(LO) at ∼570 cm-1 and also shifted with different O<inf>2</inf>:N<inf>2</inf> timing ratio. The carrier mobility of InON thin films was decreased when the ratio of O<inf>2</inf>:N <inf>2</inf> timing is increased. © (2010) Trans Tech Publications.
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Oxygen control on nanocrystal-AION films by reactive gas-timing technique R.F. magnetron sputtering and annealing effect
(2008-12-01)
Bunjongpru, W.
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Pomtheeraphat, S.
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Somwang, N.
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Khomdet, P.
;
Hruanun, C.
The AlON films grown on Si(100) substrates by using radio frequency (r.f.) magnetron sputtering from high purity aluminum (99.999% Al) target with a novel reactive gas-timing technique. The 100 nm thick of AlON films were deposited with 200 watts r.f. power and the substrate temperature is maintained at room temperature by the technique of gas-timing which varying flow-in sequence of high purity of Ar (99.999%) and N<inf>2</inf> (99.9999%) gases fed into the sputtering chamber at 10:90 (sec) ratio. The composition and crystal orientation of AlON films affected by gas-timing of Ar and N<inf>2</inf> were analyzed by Auger Electron Spectroscopy (AES) and Xray diffraction (XRD). The oxygen atoms revealed by AES formed into a corporation in films was studied. This suggests that the oxygen contamination formed as A10<inf>x</inf>N<inf>y</inf> compound may due to the residual oxygen in base pressure of 10-7 mbar and higher reactivity of oxygen in the reactor compared to nitrogen. The gas-timing technique used in the sputtering growth system shows the advantage of the oxygen quantity control, while the general sputtering process (without gas-timing technique) shows an increase of the oxygen composition depended on film thickness. The characterizations results clearly indicate that the gas-timing r.f. magnetron sputtering technique plays an important role to control the incorporation of oxygen and to form the nanocrystalaluminum oxynitride films which very attractive for various sensors applications. © 2008 Trans Tech Publications, Switzerland.
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An extreme change in structural and optical properties of indium oxynitride deposited by reactive gas-timing RF magnetron sputtering
(2008-09-30)
Sungthong, A.
;
Porntheeraphat, S.
;
Poyai, A.
;
Nukeaw, J.
The indium oxynitride (InON) films were achieved by reactive RF magnetron sputtering indium target which has the purity of 99.999% with a novel reactive gas-timing technique. The structural, optical and electrical properties in a series of polycrystalline InON films affected by gas-timing of reactive N <inf>2</inf> and O <inf>2</inf> gases introduced to the chamber were observed. The X-ray photoelectron spectroscopy revealed that the oxygen content in thin films that compounded to indium and nitrogen, which increased from 10% in indium nitride (InN) to 66% in indium oxide (In <inf>2</inf> O <inf>3</inf> ) films. The X-ray diffraction peaks show that the phase of deposited films changes from InN to InON and to In <inf>2</inf> O <inf>3</inf> with an increasing oxygen timing. The hexagonal structure of InN films with predominant (0 0 2) and (0 0 4) orientation was observed when pure nitrogen is only used as sputtering gas, while InON and In <inf>2</inf> O <inf>3</inf> seem to demonstrate body-center cubic polycrystalline structures depending on gas-timing. The surface morphologies investigated from atomic force microscope of deposited films with varying gas-timing of O <inf>2</inf> :N <inf>2</inf> show indifferent. The numerical algorithm method was used to define the optical bandgap of films from transmittance results. The increasing oxygen gas-timing affects extremely to the change of crystallinity phase from InN to InON and to In <inf>2</inf> O <inf>3</inf> , the increase of optical bandgap from 1.4 to 3.4 eV and the rise of sheet resistance from 15 Ω/□ to insulator. © 2008 Elsevier B.V. All rights reserved.
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Photomodulated reflectance study on optical property of InN thin films grown by reactive gas-timing rf magnetron sputtering
(2008-09-30)
Porntheeraphat, S.
;
Nukeaw, J.
The photoreflectance (PR) spectroscopy has been applied to investigate the band-gap energy (E <inf>g</inf> ) of indium nitride (InN) thin films grown by rf magnetron sputtering. A novel reactive gas-timing technique applied for the sputtering process has been successfully employed to grow InN thin films without neither substrate heating nor post annealing. The X-ray diffraction (XRD) patterns exhibit strong peaks in the orientation along (0 0 2) and (1 0 1) planes, corresponding to the polycrystalline hexagonal-InN structure. The band-gap transition energy of InN was determined by fitting the PR spectra to a theoretical line shape. The PR results show the band-gap energy at 1.18 eV for hexagonal-InN thin films deposited at the rf powers of 100 and 200 W. The high rf sputtering powers in combination with the gas-timing technique should lead to a high concentration of highly excited nitrogen ions in the plasma, which enables the formation of InN without substrate heating. Auger electron spectroscopy (AES) measurements further reveal traces of oxygen in these InN films. This should explain the elevated band-gap energy, in reference to the band-gap value of 0.7 eV for pristine InN films. © 2008 Elsevier B.V. All rights reserved.

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