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Subject: search.filters.subject.Schottky diode

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    Low leakage current Ni/CdZnTe/In diodes for X/γ-ray detectors
    (2018-01-21)
    Sklyarchuk, V. M.
    ;
    Gnatyuk, V. A.
    ;
    Pecharapa, W.
    The electrical characteristics of the Ni/Cd<inf>1−</inf><inf>x</inf>Zn<inf>x</inf>Te/In structures with a metal–semiconductor rectifying contact are investigated. The diodes, fabricated on the base of In-doped n-type Cd<inf>1−</inf><inf>x</inf>Zn<inf>x</inf>Te (CZT) crystals with resistivity of ∼10<sup>10</sup> Ω⋅ cm, have low leakage current and can be used as X/γ-ray detectors. The rectifying contact was obtained by vacuum deposition of Ni on the semiconductor surface pretreated with argon plasma. The high barrier rectifying contact allowed us to increase applied reverse bias voltage up to 2500 V at the CZT crystal thickness of 1 mm. Dark (leakage) currents of the diodes with the rectifying contact area of 4 mm<sup>2</sup> did not exceed 3–5 nA at bias voltage of 2000 V and room temperature. The charge transport mechanisms in the Ni/CZT/In structures have been interpreted as generation–recombination in the space charge region within the range of reverse bias of 5–100 V and as currents limited by space charge at both forward and reverse bias at V >100 V.
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    A rectangular patch rectifying antenna array for wireless power transmission applications
    (2017-12-19)
    Wounchoum, Phairote
    ;
    Janpangngern, Pisit
    ;
    Pookkapund, Khanet
    ;
    Phongcharoenpanich, Chuwong
    In this paper, a suspended-rectangular patch rectifying antenna (rectenna) array for 2.45 GHz wireless power transmission is presented. The proposed rectenna, which consists of an antenna array and a rectifying circuit, is designed to convert the RF signal into DC power. The antenna structure is designed by using a rectangular patch which radiates unidirectional pattern. The air substrate of the antenna is used to achieve high gain. The rectifying circuit is designed based on voltage diode with stub matching circuit. The dimension of the proposed antenna is square of 190 mm. The measured gain of this antenna is 14 dBi. At the distance of 1 m, the proposed rectifying circuit achieves the output voltage of 1.5 V and output current of 0.15 mA with a 1 MΩ resistor load and a transmitter power of 34.6 dBm EIRP.
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    Study on schottky diode characteristics improving by X-ray irradiation
    (2013-08-30)
    Klinsanit, Sani
    ;
    Srithanachai, Itsara
    ;
    Ueamanapong, Surada
    ;
    Khunkhao, Sunya
    ;
    Nararug, Budsara
    The effect of soft X-ray irradiation to the Schottky diode properties was analyzed in this paper. The built-in voltage, leakage current, and work function of Schottky diode were investigated. The current-voltage characteristics of the Schottky diode are measured at room temperature. After irradiation at 70 keV for 55 seconds the forward current and leakage current are increase slightly. On the other hand, the built-in voltage is decrease from the initial value about 0.12 V. Consequently, this method can cause the Schottky diode has low power consumption. The results show that soft X-ray can improve the characteristics of Schottky diode. © (2013) Trans Tech Publications Switzerland.
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    UV photodetector from Schottky diode diamond film
    (2002-03-01)
    Thaiyotin, L.
    ;
    Ratanaudompisut, E.
    ;
    Phetchakul, T.
    ;
    Cheirsirikul, S.
    ;
    Supadech, S.
    Diamond film was synthesized on a silicon substrate by hot-filament CVD and used to fabricate a Schottky photodiode for the detection of UV light. This paper presents an improved structure of photodiode, which reduces the effect of grain boundaries in the polycrystalline diamond film. The Schottky photodiode was fabricated on free-standing diamond film and operation in a vertical direction can be expected to reduce the effect of grain boundaries. The device shows good response to UV light and a very low response to visible light. The dark current is less than 10 pA. The device response time is less than 20 μs. Furthermore, the device reveals little change in spectral response with increasing temperature at all wavelengths. © 2002 Elsevier Science B.V. All rights reserved.