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    Development of thin film a-SiO:H/a-Si:H double-junction solar cells and their temperature dependence
    (2013-11-01)
    Sriprapha, Kobsak
    ;
    Hongsingthong, Aswin
    ;
    Krajangsang, Taweewat
    ;
    Inthisang, Sorapong
    ;
    Jaroensathainchok, Suttinan
    Hydrogenated amorphous silicon oxide (a-SiO:H)/hydrogenated amorphous silicon (a-Si:H) double-junction solar cells with a high open-circuit voltage (V<inf>oc</inf>) and a low temperature coefficient (TC) were developed using a wide bandgap a-SiO:H film as the intrinsic (i) layer of the top cell. It was found that with an increasing carbon dioxide (CO<inf>2</inf>)/silane (SiH <inf>4</inf>) ratio, the optical bandgap (E<inf>opt</inf>) of the a-SiO:H films increased remarkably while the photogain tended to decrease. By employing an optimized a-SiO:H film as the i top layer of the a-SiO:H/a-Si:H solar cell, an initial conversion efficiency (η) of 10.2% was obtained. This solar cell showed a higher η than the conventional a-Si:H/a-Si:H structure, a result of incremental improvements in the V<inf>oc</inf> and short-circuit current density (J<inf>sc</inf>), which were attributed to the wider bandgap of the intrinsic top layer. It was found that the TC for η of the a-SiO:H/a-Si:H solar cell was -0.10%/°C, slightly lower than that of the a-Si:H/a-Si:H solar cell, whose TC value is about -0.15%/°C. The light-induced degradation (LID) ratio for η of the a-SiO:H/a-Si:H solar cell was approximately 19%, which was 2% lower than that of the a-Si:H/a-Si:H solar cell. These results have demonstrated the great potential of the i-a-SiO:H films as absorber layers of top cells in multi-junction silicon-based thin-film solar cells. The a-SiO:H/a-Si:H solar cells with low TCs and low LID ratios are attractive for their potential use in high-temperature environments or tropical regions. © 2013 Elsevier B.V.
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    A simple model of short channel MOSFET including velocity overshoot
    (2002-01-01)
    Kasemsuwan, V.
    In this paper, a simple model for short channel MOSFET including velocity overshoot is proposed. The model is developed based on the velocity overshoot model obtained from the solution of energy balance equation under the assumption of displaced Maxwellian distribution. The resulting velocity model is the augmented drift-diffusion velocity model and all parameters involved are physical parameters. The model also includes the effects of the mobility degradation, channel length modulation, drain induced barrier lowering and parasitic drain source resistance. The theoretical predictions of the model are compared with the experimental data and shown to be in good agreement over a wide range of bias conditions.