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A simple model of short channel MOSFET including velocity overshoot
Author(s)
Date Issued
January 1, 2002
Type
Conference Paper
Abstract
In this paper, a simple model for short channel MOSFET including velocity overshoot is proposed. The model is developed based on the velocity overshoot model obtained from the solution of energy balance equation under the assumption of displaced Maxwellian distribution. The resulting velocity model is the augmented drift-diffusion velocity model and all parameters involved are physical parameters. The model also includes the effects of the mobility degradation, channel length modulation, drain induced barrier lowering and parasitic drain source resistance. The theoretical predictions of the model are compared with the experimental data and shown to be in good agreement over a wide range of bias conditions.
Citation
Proceedings of the IEEE Hong Kong Electron Devices Meeting, 2002-January, 87-90, 2002