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Enhancing PV system modeling accuracy with the irradiance intensity selection technique
(2026-06-01)
Songtrai, Sasiwimon
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Chinnavornrungsee, Perawut
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Sriprapha, Kobsak
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Kobayashi, Tomonao
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Niemcharoen, Surasak
This study is a method to improve the accuracy of photovoltaic (PV) power modeling by the irradiance intensity segmentation. The developed model was compared with 2 years of data from PV system in Thailand and the original 1D5P and weight function models to determine accuracy. The results show that by applying the irradiance intensity selection technique with a 1D5P equivalent circuit model improved the accuracy of the proposed model. The proposed method achieved a significantly lower %root mean square error (%RMSE) compared with other models yielding %RMSE values of 0.26% under clear-sky and 2.80% under cloudy conditions. Seasonal evaluation further demonstrated improved prediction accuracy, with the lowest deviation observed during the rainy period, attributed to reduced dust accumulation. A 2 years comparison confirmed the proposed model exhibited the lowest deviation of 0.69%, outperforming conventional PV simulation programs. These findings indicate that irradiance segmentation enhances forecasting performance and provides accurate PV output estimation under real environmental conditions.
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Porous Silicon Formation by Stain Etching on Pyramid Surface in U-Shape MSM Photodetector
(2024-01-01)
Muanghlua, Rangson
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Atiwongsangthong, Narin
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Vijafun, Jidapa
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Suttijalern, Kamonwan
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Niemcharoen, Surasak
In this paper, the porous silicon formation on pyramid surface in U-shape MSM photodetector was studied. Stain etching technique was used to prepare porous silicon material. The solution for stain etching contained the mixed solution of hydrofluoric acid (HF), nitric acid (HNO<inf>3</inf>) and deionized water (DI) with ratios 1: 3: 5 and used halogen lamp expouse 30,000 lux between etching for excite porous formation in 2 minutes. Porous silicon was fabricated on pyramid surface in U shape which between metal electrode titanium and aluminum on p-type silicon 20-25 Ω-cm to reduce the reflection of incident light and to increase a photocurrent of MSM photodetector. In the final part of this paper are the comparison physical morhhology and electrical characteristic of porous silicon on pyramid surface in U shape MSM photodetector with pyramid in U-shape MSM photodetector without porous silicon on the surface and planar MSM photodetector. The physical morphology of porous silicon on pyramid surface in U-shape was studied by using scanning electron microscopy (SEM). The electrical characteristic was investigated by using incident light with wave length 635 nm and power 6 mW at bias voltage 10 V. The result of comparison, we found that porous silicon on the surface of pyramid in U-shape MSM photodetector is rougher than pyramid in U-shape MSM photodetector without porous silicon on the surface. The electrical characteristic of porous silicon on pyramid surface in U-shape MSM photodetector respond incident light higher than pyramid in U-shape MSM photodetector without porous silicon on the surface. Therefore the forming porous silicon on the suface of pyramid in U-shape MSM photodetector is appropriate for the fabrication of MSM photodetector with high photocurrent.
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Development of Flexible Semiconductors Based on g-C3N4/Cu2O P–N Heterojunction for Triboelectric Nanogenerator Application
(2023-01-01)
Worathat, Supakarn
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Pharino, Utchawadee
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Sriphan, Saichon
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Niemcharoen, Surasak
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Thitirungraung, Wisut
This research aims to develop flexible semiconductors for triboelectric nanogenerator (TENG) applications. The sample powders of graphitic carbon nitride (g-C<inf>3</inf>N<inf>4</inf>) and copper (I) oxide (Cu<inf>2</inf>O) as N-type and P-type semiconductors, respectively, were synthesized. The semiconductors were prepared to be a composite film with alginate. The structure, morphology, and purity of the N- and P-type semiconductors were characterized using X-Ray diffraction and scanning electron microscopy techniques. Through the optical characterization, the N-type semiconductor showed the calculated energy band gap of 2.80 eV, while the P-type semiconductor was 1.90 eV. The P–N junction property of prepared samples was confirmed using a nonlinear current–voltage characteristic. After that, two flexible semiconductors were frictional paired for TENG. Through a vertical contact-separation mode, the P–N junction-based TENG produced a maximum output voltage and current of 3.90 V and 0.44 µA, respectively, with a maximum output power of 0.35 µW at 10 MΩ. In summary, the present work achieved the preparation of flexible P- and N-type semiconductors. The feasibility to harvest the mechanical energy was demonstrated in the TENG configuration. This idea is crucial for the future development of flexible harvesting/sensing devices using a novel concept.
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Anisotropic wet etching of a novel micro-texture structure for an Al/n-Si/Al metal-semiconductor-metal photodetector fabrication
(2021-08-01)
Suttijalern, Kamonwan
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Niemcharoen, Surasak
Micro-electro-mechanical system fabrication involves molding on a single substrate. Chemical wet etching is common in these systems because it can provide a very high etch rate and selectivity. This optical device has been successfully completed fabrication by using the single-step lithography process. The surface was coated with PR and patterned using a single mask to create U-shaped structures by a wide electrode gap on a silicon substrate. Then it was etched using anisotropic wet etching process in potassium hydroxide, tetramethylammonium hydroxide (TMAH), silicic acid and dissolved silicon powder. The etchant created a 58% increase in the light sensitive area of the U-shaped trench in the structure higher compared to the planar structure. Random micro-pyramids, formed on the silicon surface in the U-shaped structure by the silicic acid-added TMAH solution, led to a ∼254 times higher ratio between photon generated current and dark current at reverse bias. This processing technique is a promising technology for improving performance for next-generation optical sensors or silicon photodetector.
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A method to improve the accuracy of simulation models: A case study on photovoltaic system modelling
(2021-01-02)
Bupi, Aekkawat
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Kittisontirak, Songkiate
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Chinnavornrungsee, Perawut
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Songtrai, Sasiwimon
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Manosukritkul, Phassapon
This research presents a method to improve data accuracy for the more efficient data management of the studied applications. The data accuracy was improved using the preciseness function learning model (PFL model). It contains a database in which the amount of data is more or less dependent on all of the possible behavior of the studied application. The proposed model improves data with functions obtained by optimizing curves to represent the data at each point, which estimate the database’s diffusion behavior, and functions can be built around all of the various forms of databases. The proposed model always updates its database after processing. It has been learning to optimize the processing precision. In order to verify the precision of the proposed model through its application to a PV system simulation model, the process’s database should contain at least one year. This is because the overall behavior of the PV power output in Thailand depends on the seasonal weather; Thailand has three seasons in a period of one year. The testing was performed by comparing the PV power output. The simulation results with the actual measurement data (12 MW PV system) can be divided into two conditions: the daily comparison and the seasonal PV power output. As a result, the proposed model can accurately simulate the PV power output despite the sudden daily climate change. The average nRMSE (normalized RMSE) of the proposed model is very low (1.23%), and ranges from 0.30% to 2.26%. Therefore, it has been proven that this model is very accurate.
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DOPING EFFECT FROM PT ATOM IN SILICON STRUCTURE AND TREATMENT BY ROENTGEN RADIATION FLASH EXPOSURE
(2021-01-01)
Sangwaranatee, Narong
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Srithanachai, Itsara
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Niemcharoen, Surasak
In the present, semiconductor device has big change by using high technology to improve performance and push the limit of device to support with new product to support demand of human. One of the device we are still using in our life is power semiconductor, this can support many kind of work such as satellite, power electronics and automobile. The technique in this paper will focus by using the characteristics of Pt in silicon structure for high speed and treatment with flash Roentgen radiation exposure. In principle, Pt atom can generate trapping center in silicon structure and help for increase switching time for semiconductor base on silicon substrate. However, Pt has not only good property for device but still has damage in structure is generate cluster in silicon structure that make Pt atom not really help to improve performance completely. The another goal of this paper will using flash Roentgen radiation exposure help to treatment and destroy cluster from Pt atom in silicon structure.
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Comparison of power output forecasting on the photovoltaic system using adaptive neuro-fuzzy inference systems and particle swarm optimization-artificial neural network model
(2020-01-01)
Dawan, Promphak
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Sriprapha, Kobsak
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Kittisontirak, Songkiate
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Boonraksa, Terapong
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Junhuathon, Nitikorn
The power output forecasting of the photovoltaic (PV) system is essential before deciding to install a photovoltaic system in Nakhon Ratchasima, Thailand, due to the uneven power production and unstable data. This research simulates the power output forecasting of PV systems by using adaptive neuro-fuzzy inference systems (ANFIS), comparing accuracy with particle swarm optimization combined with artificial neural network methods (PSO-ANN). The simulation results show that the forecasting with the ANFIS method is more accurate than the PSO-ANN method. The performance of the ANFIS and PSO-ANN models were verified with mean square error (MSE), root mean square error (RMSE), mean absolute error (MAP) and mean absolute percent error (MAPE). The accuracy of the ANFIS model is 99.8532%, and the PSO-ANN method is 98.9157%. The power output forecast results of the model were evaluated and show that the proposed ANFIS forecasting method is more beneficial compared to the existing method for the computation of power output and investment decision making. Therefore, the analysis of the production of power output from PV systems is essential to be used for the most benefit and analysis of the investment cost.
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Doping effect of pt on capacitance-voltage properties of metal-semiconductor-metal device
(2020-01-01)
Srithanachai, Itsara
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Niemcharoen, Surasak
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Sangwaranatee, Narong
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Auttaphut, Prongsak
This paper present the effect on capacitance-voltage (C-V) characteristics of metal-semiconductor-metal (MSM) by Pt doping. Platinum atom dope on back side of substrate and drive in by using rapid thermal annealing (RTA) process around 5 mins, then, diffuse into silicon structure. The influence of doping atom will change structure of silicon and impact to electrical properties of device. Pt atom will induce trapping center in silicon band and will help in switching time of MSM device. The ultimate goal of this paper will focus on C-V characteristics and simulation result of Pt atom to confirm diffusion range. Moreover, we will measure resistance of silicon substrate before and after Pt-doped to confirm diffusion range.
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Tetramethyl ammonium hydroxide etchant improvement for aluminum passivation and smooth of silicon surface
(2019-03-01)
Suttijalern, Kamonwan
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Prabket, Jirawat
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Muanghlua, Rangson
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Niemcharoen, Surasak
This paper purpose to the structural design and improvement of etchant solution for U-shaped Metal-Semiconductor-Metal (UMSM) photodetector fabrication on Al/n-Si/Al with anisotropic wet etching technique, the etchant solutions include tetramethylammonium hydroxide (TMAH), ammonium persulfate (AP) and silicic acid with different concentrations. Experimental design of photodetector structure to optimize the photodetector and improvement conditions of the etching solution by adding AP and silicic acid into the TMAH solution to increase the silicon surface roughness and reduce the rate of etching aluminum as electrodes. For structural design experiments, increasing the exposure area on the U-shaped groove up to 1.73 times. The results from the addition of AP to TMAH solution showed that the silicon surface is smoothness. It has a highest silicon etching rate and the addition of silicic acid to TMAH solution can reduce aluminum and silicon dioxide etching rate. Therefore, this research has the effective condition is 5 wt% TMAH with 7 g/1 AP and 34 g/1 silicic acid added. The results show the silicon surface has smooth about 5 nm and high silicon etch rate including etching aluminum equal to 0.26 μm/hr that suitable for design photodetector in further research.
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Fabrication of MEMS-based capacitive silicon microphone structure with staircase contour cavity using multi-film thickness mask
(2019-02-01)
Jantawong, Jirawat
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Atthi, Nithi
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Leepattarapongpan, Chana
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Srisuwan, Awirut
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Jeamsaksiri, Wutthinan
In this work, a silicon capacitive microphone structure with a three-dimensional staircase style contour cavity (S-CTC) is developed using a newly developed Multi Film Thickness photo lithography process. This newly developed Multi Film masking process overrides the conventional wisdom in which the staircase style cavity is formed using multiple exposures of mask and multiple etchings of silicon. With this newly developed photo lithographic technique, a Multi Film Thickness (MFT) mask is fabricated with varying chromium film thicknesses such as 0, 4, 14, and 114 nm thick. The mask was then evaluated to fabricate a microphone structure with a three-dimensional staircase style cavity. Once the mask was patterned onto a substrate, a single dry etching of silicon was carried out and a desired three-dimensional stair cavity pattern was achieved. Surprisingly, our results show that a capacitive sensor with an S-CTC structure has an increased absolute capacitance value by an average of 30% in comparison to a conventional box cavity (BC) structure. This may indeed improve SNR as we anticipated. The capacitance value changed from 2.2pf to 2.9pf for the same dimension of devices. This promising technology renders an opportunity to improve the next generation of ultra-low-pressure sensors for microphone applications.

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