Doping effect of pt on capacitance-voltage properties of metal-semiconductor-metal device

This paper present the effect on capacitance-voltage (C-V) characteristics of metal-semiconductor-metal (MSM) by Pt doping. Platinum atom dope on back side of substrate and drive in by using rapid thermal annealing (RTA) process around 5 mins, then, diffuse into silicon structure. The influence of doping atom will change structure of silicon and impact to electrical properties of device. Pt atom will induce trapping center in silicon band and will help in switching time of MSM device. The ultimate goal of this paper will focus on C-V characteristics and simulation result of Pt atom to confirm diffusion range. Moreover, we will measure resistance of silicon substrate before and after Pt-doped to confirm diffusion range.