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    Doping effect of pt on capacitance-voltage properties of metal-semiconductor-metal device
    (2020-01-01)
    Srithanachai, Itsara
    ;
    Niemcharoen, Surasak
    ;
    Sangwaranatee, Narong
    ;
    Auttaphut, Prongsak
    This paper present the effect on capacitance-voltage (C-V) characteristics of metal-semiconductor-metal (MSM) by Pt doping. Platinum atom dope on back side of substrate and drive in by using rapid thermal annealing (RTA) process around 5 mins, then, diffuse into silicon structure. The influence of doping atom will change structure of silicon and impact to electrical properties of device. Pt atom will induce trapping center in silicon band and will help in switching time of MSM device. The ultimate goal of this paper will focus on C-V characteristics and simulation result of Pt atom to confirm diffusion range. Moreover, we will measure resistance of silicon substrate before and after Pt-doped to confirm diffusion range.
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    The Design of Metal-Semiconductor-Metal Structure Magnetic Sensor
    (2016-01-01)
    Sutthinet, Chalin
    ;
    Phetchakul, Toempong
    ;
    Luanatikomkul, Wittaya
    ;
    Poyai, Amporn
    This paper presents the MSM structure magnetic detector device that normally detects the electromagnetic wave. The device is special design for magnetic field detector and still detects the electromagnetic wave as normal function. The schottky diode with the split contacts structure allows us to reach this target. The device operates with the saturation current and the magnetic response is the current difference between two contacts which is injected from one metal and deflected in semiconductor toward to another metal. From the simulation result by Sentaurus TCAD, the relative sensitivity is 14.19 mT<sup>-1</sup> at the current 0.3 μA. This device is the first MSM multi-sensor for magnetic and electromagnetic wave detector.