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    Ultra-low voltage tunable transconductor based on bulk-driven quasi-floating-gate technique
    (2013-09-01)
    Khateb, Fabian
    ;
    Khatib, Nabhan
    ;
    Prommee, Pipat
    ;
    Jaikla, Winai
    ;
    Fujcik, Lukas
    This paper presents ultra-low voltage transconductor using a new bulk-driven quasi-floating-gate technique (BD-QFG). This technique leads to significant increase in the transconductance and the bandwidth values of the MOS transistor (MOST) under ultra-low voltage condition. The proposed CMOS structure of the transconductor is capable to work with ultra-low supply voltage of ±300 mV and low power consumption of 18 μW. The transconductance value of the transconductor is tunable by external resistor with wide linear range. To prove the validation of the new described technique a second-order G<inf>m</inf>-C multifunction filter is presented as one of the possible applications. The simulation results using 0.18 μm CMOS N-Well process from TSMC show the attractive features of the proposed circuit. © 2013 World Scientific Publishing Company.
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    Electronically tunable voltage-mode quadrature oscillator based on high performance CCCDBA
    (2013-03-01)
    Khateb, Fabian
    ;
    Jaikla, Winai
    ;
    Kubánek, David
    ;
    Khatib, Nabhan
    This paper presents a new electronically tunable voltage-mode quadrature oscillator using two high performance current controlled current differencing buffered amplifiers (CCCDBA), two capacitors and single resistor, all of them are grounded which is advantageous for monolithic integration. The condition of oscillation and the frequency of oscillation are independent and can be controlled by two separate bias currents. The output voltages are obtained at the terminals with aμmost zero internal impedances, thus there is no need to use any buffering devices. The MOS structure of the CCCDBA presented in this paper is of a high performance and ensures precision, large dynamic range, wide bandwidth and has the capability to drive a load with very low resistance. Non-ideal analysis of the proposed oscillator is provided and PSpice simulation results using the 0.18 μm n-well CMOS technology from TSMC are included to verify the correct functionality of the proposed circuit. © Springer Science+Business Media, LLC 2012.