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Item type:Item, Alcohol vapor detection by using nanoporous silicon as based sensor(2013-01-01) ;Atiwongsangthong, NarinNiemcharoen, SurasakIn this paper, we are concerned with fabrication of alcohol vapor sensor based on nanoporous silicon. In order to use nanoporous silicon as alcohol vapor sensor, we made nanoporous silicon onto p-type silicon wafer by electrochemical etching of silicon wafer in hydrofluoric acid solution. The structure of this sensor consists of nanoporous silicon layer and aluminum electrode which is deposited on the top of nanoporous silicon layer by evaporator. In this research, we are concerned the variation of electrical properties of this sensor due to presence of different concentration of alcohol vapor. From the experiment, it is found that this sensor can detect the different concentrations of alcohol vapor in the rang 1000 ppm to 250 ppm. - Some of the metrics are blocked by yourconsent settings
Item type:Item, Application of nanoporous silicon for a metal-semiconductor-metal visible light photodetector(2011-01-01) ;Atiwongsangthong, Narin ;Niemcharoen, SurasakTitiroongruang, WisutIn this paper we present a study on the application of nanoporous silicon to an optoelectronic device called a nanoporous silicon metal-semiconductor- metal (MSM) visible light photodetector. This device was fabricated on a nanoporous silicon layer which was formed by electrochemical etching of a silicon wafer in a hydrofluoric acid solution under various anodization conditions such as the resistivity of the silicon wafer, current density, concentration of the hydrofluoric acid solution and anodization time. The structure of this device has two square Al/nanoporous silicon Schottkybarrier junctions on the silicon substrate and the electrode spacing is 500 μm. The experiment will study photoresponse and the response time of a nanoporous silicon MSM photodetector which was fabricated on the various porosity of a nanoporous silicon layer. It is found that when devices are fabricated on a higher porosity nanoporous silicon layer, the photoresponse of the device will expand toward the short-wavelength and the bandwidth of the spectrum response will cover visible light. In addition, it is found that the response time of the device decreases. Copyright © 2011 American Scientific Publishers All rights reserved.
