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Optimization of electrical and optical properties of ITO thin films by annealing in air and nitrogen
(2022-01-01)
Torasa, Chonmapat
;
Srithanachai, Itsara
This paper will investigation the optimization of ITO thin films by various thin films deposited time with annealing under air and nitrogen environment. ITO will use for transparent electrode of photodetector that require high transparent and low resistivity. Thin films prepare by using RF sputtering technique by various sputter times 5, 15, 30 and 60 mins then annealing under air and nitrogen for 10 mins, 300 °C. Transparent of thin films after prepared at thickness around 1,166 µm and annealing under nitrogen environment show high transparent 89.8% at wavelength 1,170 nm and low resistivity 2.1 × 10<sup>−5</sup> ohm-cm. From the results of transparent and resistivity will get optimize thickness of thin films that use for transparent electrode of photodetector. By optimize thickness of ITO thin films is 413 nm with 87.6% transparent and 0.8 × 10<sup>−3</sup> ohm-cm resistivity.
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Roentgen radiation response in P-N semiconductor device
(2022-01-01)
Torasa, Chonmapat
;
Srithanachai, Itsara
Radiation is an important for investigate semiconductor device process improvement area. Currently, radiation use for many areas in semiconductor device and one of application use semiconductor device for detector. However, radiation is one of part of cure process in semiconductor area although radiation has high energy and may impact to semiconductor device performance. The experiment of radiation exposed on semiconductor device investigate radiation impact area on device by COMSOL simulation before fabricate semiconductor diode. COMSOL results show high temperature on active area of semiconductor device while exposed with SRFE process that may impact to device mechanism and electrical properties of device.
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Effect of Irradiation (SRFE) on MSM Photodetectors Device
(2022-01-01)
Srithanachai, Itsara
;
Sangwaranatee, Narong
This paper presents the effect of high energy irradiation expose on metal-semiconductor-metal (MSM) photodetectors device. High energy radiation may impact to lattice structure of semiconductor device. The most impact of radiation on MSM device had been studied base on polycrystalline silicon. Based on our research in SRFE process exposed on P-N power device, radiation will interact with device mechanism and structure that change electrical properties of device. However, MSM device show electrical properties change after irradiation exposure process by photocurrent increased around 4 times when compare with non-irradiated.
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DOPING EFFECT FROM PT ATOM IN SILICON STRUCTURE AND TREATMENT BY ROENTGEN RADIATION FLASH EXPOSURE
(2021-01-01)
Sangwaranatee, Narong
;
Srithanachai, Itsara
;
Niemcharoen, Surasak
In the present, semiconductor device has big change by using high technology to improve performance and push the limit of device to support with new product to support demand of human. One of the device we are still using in our life is power semiconductor, this can support many kind of work such as satellite, power electronics and automobile. The technique in this paper will focus by using the characteristics of Pt in silicon structure for high speed and treatment with flash Roentgen radiation exposure. In principle, Pt atom can generate trapping center in silicon structure and help for increase switching time for semiconductor base on silicon substrate. However, Pt has not only good property for device but still has damage in structure is generate cluster in silicon structure that make Pt atom not really help to improve performance completely. The another goal of this paper will using flash Roentgen radiation exposure help to treatment and destroy cluster from Pt atom in silicon structure.
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Doping effect of pt on capacitance-voltage properties of metal-semiconductor-metal device
(2020-01-01)
Srithanachai, Itsara
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Niemcharoen, Surasak
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Sangwaranatee, Narong
;
Auttaphut, Prongsak
This paper present the effect on capacitance-voltage (C-V) characteristics of metal-semiconductor-metal (MSM) by Pt doping. Platinum atom dope on back side of substrate and drive in by using rapid thermal annealing (RTA) process around 5 mins, then, diffuse into silicon structure. The influence of doping atom will change structure of silicon and impact to electrical properties of device. Pt atom will induce trapping center in silicon band and will help in switching time of MSM device. The ultimate goal of this paper will focus on C-V characteristics and simulation result of Pt atom to confirm diffusion range. Moreover, we will measure resistance of silicon substrate before and after Pt-doped to confirm diffusion range.
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Effect of rta on electrical characteristics of pt-doped p-n junction diode
(2017-02-01)
Chaiyasoonthorn, Sawatsakorn
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Srithanachai, Itsara
;
Sangwaranatee, Narong
This paper investigates the effect of rapid thermal annealing (RTA) between 850 and 900°C. Platinum (Pt) atom will drive-into silicon structure by using RTA process and the influence of temperature. Therefore, we study the effects of temperature in RTA process to I-V characteristics of device are 850 and 900°C at 15 mins. After annealing process, the built-in voltage (Vbi ) is around 0.3-0.4eV, which means that Pt does not affect the device junction. The I-V characteristics after annealing show that at 900°C there is the worst leakage of current with slightly better than the forward current. In case of leakage current, it may occur from the Pt atom damage creation or trapping center in silicon structure.
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Effect on C-V characteristics of P-N photodetector
(2017-02-01)
Chaiyasoonthorn, Sawatsakorn
;
Srithanachai, Itsara
;
Sangwaranatee, Narong
This paper is aimed at investigating the way to reduce the Pt-doped effect on silicon N-Type photodetector. The influencing of Pt-doped on silicon mechanism is an important problem because the performance of semiconductor device may decrease as a result from this process. In this paper, the obtained experimental result has shown that the Roentgen radiation can be used to reduce the influence from Pt-doped process, where C-V characteristics are the parameters to study in this experiment, from which the Roentgen radiation characteristics may change because the silicon bulk absorbs radiation of about 60%. The results have indicated that the C-V characteristics are not significantly changed. This way, radiation may induce and reduce some of the defects in silicon bulk but C-V is without change. Accordingly, parameters should be investigated to explain the defects to confirm the influence of Roentgen radiation by I-V characteristics and carrier concentration.
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Capacitance-voltage (c-v) characteristic effect of pt atom power device
(2016-06-01)
Sangwaranatee, Narong
;
Srithanachai, Itsara
;
Yupapin, Preecha P.
As Pt atoms may create problem into the surface and junction of the power device, the paper investigates the effect of Pt atoms in thermal annealing (TA) process for various temperature environments. Though experiments, the comparison between un-doped and Pt-doped results for 850 °C and 900 °C has been made. As per results obtained Pt atoms can be deeply diffused to the silicon bulk after the TA 2 process. While before this process, the Pt diffusion range was recorded to be 4,500A. It was found that there was no significant change in C-V characteristics of Pt-doped, when the Vbi of 0.4-0.5eV got achieved. Thus, the Pt atoms contact type is not changed and the carrier concentration is confirmed due to effect that Pt may induce trap or cluster that can reduce the power device carrier concentration.
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Power device impact using pt-doped on i-v characteristics
(2016-06-01)
Sangwaranatee, Narong
;
Srithanachai, Itsara
;
Yupapin, Preecha P.
We investigate the influence of Pt-doped in the power device, where the power device has been fabricated by using CMOS technology. Pt has high diffusion coefficient in the semiconductor material and Pt atom that can be used to reduce the device switching time. On the other hand, it may induce defects in device mechanism. The results obtained show that the Pt can penetrate into the silicon structure of 3,700A (before RTA process) by using the ion implantation 120keV. The Pt-doped device has shown the higher forward current of order 1. The goal of this experiment is to investigate the effect of Pt-doping on electrical characteristics of the power device.
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Removing the transients electron trapping in P-N junction diode by using soft X-ray annealing method
(2014-01-01)
Ueamanapong, Surada
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Srithanachai, Itsara
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Niemcharoen, Surasak
;
Poyai, Amporn
This paper describes a transient phenomenon in the reverse current of P-N junctions giving rise to a hump at a specific reverse bias. P-N diode as been fabricated by a deep boron ion implantation (120 keV) and a junction depth around 4 μm is expected. Ion implantation can cause defect in silicon substrate even if the device was cured by annealing process, the defect or its effect is still remained. I-V characteristic has been acquired from -10 V to 0 V in temperature variation of 30-80°C. At the specific condition of -3 V, 80°C humps occurred on the curve and when the device was exposed to X-ray at energy of 40, 55 and 70 keV. The humps were then shifted toward 0 V. Activation energy has been calculated in order to give an insight into the device characteristics. It revealed the presence of a non-uniform density of electron traps corresponding to a broad range of energy levels from about 0.65-0.67 eV above the intrinsic band. This report shows an interesting phenomenon of the deep P-N junction diode modified by X-ray irradiation. Copyright © 2014 Inderscience Enterprises Ltd.

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