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    DOPING EFFECT FROM PT ATOM IN SILICON STRUCTURE AND TREATMENT BY ROENTGEN RADIATION FLASH EXPOSURE
    (2021-01-01)
    Sangwaranatee, Narong
    ;
    Srithanachai, Itsara
    ;
    Niemcharoen, Surasak
    In the present, semiconductor device has big change by using high technology to improve performance and push the limit of device to support with new product to support demand of human. One of the device we are still using in our life is power semiconductor, this can support many kind of work such as satellite, power electronics and automobile. The technique in this paper will focus by using the characteristics of Pt in silicon structure for high speed and treatment with flash Roentgen radiation exposure. In principle, Pt atom can generate trapping center in silicon structure and help for increase switching time for semiconductor base on silicon substrate. However, Pt has not only good property for device but still has damage in structure is generate cluster in silicon structure that make Pt atom not really help to improve performance completely. The another goal of this paper will using flash Roentgen radiation exposure help to treatment and destroy cluster from Pt atom in silicon structure.
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    Doping effect of pt on capacitance-voltage properties of metal-semiconductor-metal device
    (2020-01-01)
    Srithanachai, Itsara
    ;
    Niemcharoen, Surasak
    ;
    Sangwaranatee, Narong
    ;
    Auttaphut, Prongsak
    This paper present the effect on capacitance-voltage (C-V) characteristics of metal-semiconductor-metal (MSM) by Pt doping. Platinum atom dope on back side of substrate and drive in by using rapid thermal annealing (RTA) process around 5 mins, then, diffuse into silicon structure. The influence of doping atom will change structure of silicon and impact to electrical properties of device. Pt atom will induce trapping center in silicon band and will help in switching time of MSM device. The ultimate goal of this paper will focus on C-V characteristics and simulation result of Pt atom to confirm diffusion range. Moreover, we will measure resistance of silicon substrate before and after Pt-doped to confirm diffusion range.
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    Effects of Annealing Process on the Electrical Properties of MEMS Capacitive Microphone
    (2018-07-02)
    Jantawong, Jirawat
    ;
    Leepattarapongpan, Chana
    ;
    Chaowicharat, Ekalak
    ;
    Jeamsaksiri, Wutthinan
    ;
    Austin, Anu
    In this paper, the effects of annealing temperature after pre-bonding device wafer and cover wafer during wafer fusion bonding process on the electrical properties of MEMS-based capacitive microphone with 0.53 μm thick poly-Si membrane were investigated. By the annealing in N2 ambient (14 SLM) at 900°C for 30 min, the device exhibited capacitance of 2.0 pF with pull-in voltage of 12 V. The significantly improvement of electrical properties is related to the reducing of residual stress in poly-Si membrane to near-zero level by using suitable annealing condition.