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    Doping effect of pt on capacitance-voltage properties of metal-semiconductor-metal device
    (2020-01-01)
    Srithanachai, Itsara
    ;
    Niemcharoen, Surasak
    ;
    Sangwaranatee, Narong
    ;
    Auttaphut, Prongsak
    This paper present the effect on capacitance-voltage (C-V) characteristics of metal-semiconductor-metal (MSM) by Pt doping. Platinum atom dope on back side of substrate and drive in by using rapid thermal annealing (RTA) process around 5 mins, then, diffuse into silicon structure. The influence of doping atom will change structure of silicon and impact to electrical properties of device. Pt atom will induce trapping center in silicon band and will help in switching time of MSM device. The ultimate goal of this paper will focus on C-V characteristics and simulation result of Pt atom to confirm diffusion range. Moreover, we will measure resistance of silicon substrate before and after Pt-doped to confirm diffusion range.
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    Milliwatt and nanosecond all-optical switching in a double-coupler ring resonator containing an EDFA
    (2006-09-01)
    Li, Chunfei
    ;
    Dou, Na
    ;
    Yupapin, P. P.
    We proposed an active double-coupler ring resonator all-optical switch, in which half of the fibre ring is made by a 980nm laser-pumped erbium-doped fibre to form an erbium-doped fibre amplifier (EDFA). The switching is based on self-modulation by the signal light at 1.55νm and has milliwatt switching power and nanosecond switching time for a 0.2m ring length. Because the gain of the EDFA compensates the losses in the ring and the EDF has high nonlinearity, the switching power can be reduced dramatically. Both switching time and switching power of such a switch can be controlled by adjusting the 980nm pumping power to make a trade-off between both parameters. © IOP Publishing Ltd.