Wongprasert, Yothin
Loading...
Preferred name
Wongprasert, Yothin
Alternative Name
Wongprasert, Y.
Main Affiliation
Email
yothin.wo@kmitl.ac.th
2 results
Now showing 1 - 2 of 2
- Some of the metrics are blocked by yourconsent settings
Item type:Publication, The diamond crystal nucieation by combustion activation CVD(2008-12-01); ; Sato, K.This paper presents the diamond nucleation using combustion activation chemical vapor deposition (CACVD) by 0.95 volumetric ratio of O <sup>2</sup>/C<sup>2</sup>H<sup>2</sup> under atmospheric pressure. The main point of our work is to develop the CACVD technique for synthesize the semiconductor materials, which is developed for electronic devices application. The surface nucleation of substrate was studied by using surface pretreatment. The results of surface nucieation on mirror-silicon, polished silicon by diamond powder, silicon-dioxide (Sio<inf>2</inf>), and polished Sio<inf>2</inf> by diamond powder, are significantly different. It can be concluded that the silicon-dioxide mask technique is useful for nucleated diamond protection whereas the polished silicon by diamond powder is suitable for nucleated diamond generation. These techniques are applied for the pattern fabrication. © 2008 Trans Tech Publications, Switzerland. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Optical-beam profiling by field-controlled metal-semiconductor-metal structures(2005-10-01); Titiroongruang, W.Optical-beam profiling properties of Schottky-barrier metal-semiconductor- metal (MSM) structures have been investigated experimentally. Making use of a planar molybdenum/n-type silicon/molybdenum (Mo/n-Si/Mo) MSM structure with a wide electrode separation, one-dimensional (1-D) profiling of optical-beam intensity distribution from a helium-neon (He-Ne) laser was carried out. It was confirmed that, in addition to the existing photosensing function, the sensitivity (output photocurrent) of such a structure could be controlled by applying a bias via lateral spreading of the surface space-charge-region (SCR) at the side of the reverse-biased Schottky-junction.