Muanghlua, Rangson

Preferred name

Muanghlua, Rangson

Alternative Name

Muanghlua, R.

Muanghlua, Rangsan

Main Affiliation

School of Engineering

rangson.mu@kmitl.ac.th

Now showing 1 - 10 of 83

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Synthesis, phase formation and characterization of Co4Nb 2O9 powders synthesized by solid-state reaction
(2008-12-01)
Chaiyo, N.
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Muanghlua, R.
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Ruangphanit, A.
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Vittayakorn, W. C.
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Vittayakorn, N.
A corundum-type structure of cobalt niobate (Co<inf>4</inf>Nb <sup>2</sup>O<inf>9</inf>) has been synthesized by a solid-state reaction. The formation of the Co<inf>4</inf>Nb<inf>2</inf>O<inf>9</inf> phase in the calcined powders was investigated as a function of calcination conditions by differential thermal analysis (DTA) and X-ray diffraction (XRD) techniques. Morphology and particle size have been determined by scanning electron microscopy (SEM). It was found that the minor phases of unreacted Co <inf>3</inf>O<inf>4</inf> tend to form together with the columbite CoNb <inf>2</inf>O<inf>6</inf> phase at a low calcination temperature and short dwell time. It seems that the single-phase of Co<inf>4</inf>Nb<inf>2</inf>O <inf>9</inf> in a corundum phase can be obtained successfully at the calcination conditions of 900°C for 60 min, with heating/cooling rates of 20°C /min. © 2008 Trans Tech Publications, Switzerland.
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Measured and Extraction of Coupling Capacitive of Metal Interconnect Layers in VLSI
(2018-07-02)
Ruangphanit, Anucha
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Nissai, Itsariya
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Pedlub, Rujipad
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Muanghlua, Rangson
This paper presents the measurement and extraction of the capacitance for multilayer interconnections in VLSI. The capacitance of the capacitive coupling between interconnect is measured as a function of the varying frequency in order to develop a capacitance versus frequency curve. The multi-fringe structure of interconnect metal1 layer and interconnect metal2 layer \pmb{(\text{L}=400\mu \text{m}, \ \text{no}. \ \text{strip} =80)} with the total perimeter of capacitive coupling is approximately \pmb{3.16\times 10 {4}} \pmb{\mu} \mathbf{m} of value and the area is \pmb{2.8\times 10 {4}} \ \pmb{\mu\text{m} {2}} of value are tested respectively. The line width and line spacing ratio (W/S) of interconnect is varying from 0.9/0.6, 0.9/0.9, 0.9/1.05 and 0.9/1.2 with the measured frequency of 10kHz, 100kHz, 250kHz, 500kHz, IMHZ and 5 MHz are measured. The coupling of interconnect per unit length at various line spacing as a function of measured frequency of metal1 and metal2 are reported and discussed. The results show that the coupling capacitance per unit length \pmb{(\text{F}/\mu \text{m})} increases as the spacing between adjacent interconnect lines is deceased.
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Tetramethyl ammonium hydroxide etchant improvement for aluminum passivation and smooth of silicon surface
(2019-03-01)
Suttijalern, Kamonwan
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Prabket, Jirawat
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Muanghlua, Rangson
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Niemcharoen, Surasak
This paper purpose to the structural design and improvement of etchant solution for U-shaped Metal-Semiconductor-Metal (UMSM) photodetector fabrication on Al/n-Si/Al with anisotropic wet etching technique, the etchant solutions include tetramethylammonium hydroxide (TMAH), ammonium persulfate (AP) and silicic acid with different concentrations. Experimental design of photodetector structure to optimize the photodetector and improvement conditions of the etching solution by adding AP and silicic acid into the TMAH solution to increase the silicon surface roughness and reduce the rate of etching aluminum as electrodes. For structural design experiments, increasing the exposure area on the U-shaped groove up to 1.73 times. The results from the addition of AP to TMAH solution showed that the silicon surface is smoothness. It has a highest silicon etching rate and the addition of silicic acid to TMAH solution can reduce aluminum and silicon dioxide etching rate. Therefore, this research has the effective condition is 5 wt% TMAH with 7 g/1 AP and 34 g/1 silicic acid added. The results show the silicon surface has smooth about 5 nm and high silicon etch rate including etching aluminum equal to 0.26 μm/hr that suitable for design photodetector in further research.
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Structure and dielectric properties of Bi0.5K 0.5TiO3-SrTiO3 lead-free ceramics
(2011-01-01)
Ruangphanit, Anucha
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Phetnoi, Prapapim
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Niemcharoen, Surasak
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Muanghlua, Rangson
Bismuth potassium titanate - strontium titanate (1-x)Bi<inf>0.5</inf>K <inf>0.5</inf>TiO<inf>3</inf>-(x)SrTiO<inf>3</inf> (BKT-ST) lead-free ceramics when x = 0-0.20 were synthesized by the solid state reaction method with normal sintering. The ferroelectric phase transition was studied by X-ray diffraction (XRD). All compositions showed a single phase perovskite structure with tetragonal symmetry at room temperature and the phase structure transformed from ferroelectric tetragonal - paraelectric cubic in the range of x ≥ 0.10. Dielectric study revealed that the dielectric relaxor behavior was induced with increasing ST and transition temperature (T<inf>m</inf> ε<inf>r max</inf>) of ST-doped BKT had a tendency to decrease with increasing ST. The Bi <inf>0.5</inf>K<inf>0.5</inf>TiO<inf>3</inf>-SrTiO<inf>3</inf> system was expected to be a new and promising candidate for lead-free capacitors. © (2011) Trans Tech Publications.
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Effect of Sn content on the dielectric and piezoelectric properties of the ternary system (0.975-y)BaTiO3–0.025SrTiO3–yBaSnO3
(2017-06-01)
Mayamae, Jitkasem
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Vittayakorn, Wanwilai
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Muanghlua, Rangson
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Woramongkolchai, Somsak
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Vittayakorn, Naratip
Design of the polymorphic phase composition in the (0.975-y)BaTiO<inf>3</inf>–0.025SrTiO<inf>3</inf>–yBaSnO<inf>3</inf>; BT-ST-yBSn ternary system was based on the ferroelectric phase diagram. The dense ceramic of BT-ST-yBSn, with y = 0.00, 0.02, 0.04, 0.06, 0.08 and 0.10 compositions, was fabricated successfully via the solid-state reaction method. The effect of Sn substitution on the ferroelectric phase transition and piezoelectric properties was explored in order to achieve high-performance piezoelectric properties. All of the ceramics exhibited pure perovskite structures. Orthorhombic to tetragonal phase transition was evidenced clearly as a function of Sn content. The orthorhombic to tetragonal phase transition shifted close to ambient temperature by increasing the Sn content. The coexistent tetragonal and orthorhombic phases were exhibited at the composition, y = 0.04, and showed outstanding dielectric and piezoelectric properties, maximum relative permittivity (ε<inf>r max</inf>) of 11500 and piezoelectric coefficient (d<inf>33</inf>) of 450 pC/N. An outstanding reversible strain of about 0.12%, with a normalized piezoelectric coefficient (S<inf>max</inf>/E<inf>max</inf>) of 1280 pm/V at a low electric field (10 kV/cm), was observed clearly at the composition of the coexistent phase. The BT-ST-BSn ceramics are the most promising candidate for lead-free piezoelectric materials.
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Porous Silicon Formation by Stain Etching on Pyramid Surface in U-Shape MSM Photodetector
(2024-01-01)
Muanghlua, Rangson
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Atiwongsangthong, Narin
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Vijafun, Jidapa
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Suttijalern, Kamonwan
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Niemcharoen, Surasak
In this paper, the porous silicon formation on pyramid surface in U-shape MSM photodetector was studied. Stain etching technique was used to prepare porous silicon material. The solution for stain etching contained the mixed solution of hydrofluoric acid (HF), nitric acid (HNO<inf>3</inf>) and deionized water (DI) with ratios 1: 3: 5 and used halogen lamp expouse 30,000 lux between etching for excite porous formation in 2 minutes. Porous silicon was fabricated on pyramid surface in U shape which between metal electrode titanium and aluminum on p-type silicon 20-25 Ω-cm to reduce the reflection of incident light and to increase a photocurrent of MSM photodetector. In the final part of this paper are the comparison physical morhhology and electrical characteristic of porous silicon on pyramid surface in U shape MSM photodetector with pyramid in U-shape MSM photodetector without porous silicon on the surface and planar MSM photodetector. The physical morphology of porous silicon on pyramid surface in U-shape was studied by using scanning electron microscopy (SEM). The electrical characteristic was investigated by using incident light with wave length 635 nm and power 6 mW at bias voltage 10 V. The result of comparison, we found that porous silicon on the surface of pyramid in U-shape MSM photodetector is rougher than pyramid in U-shape MSM photodetector without porous silicon on the surface. The electrical characteristic of porous silicon on pyramid surface in U-shape MSM photodetector respond incident light higher than pyramid in U-shape MSM photodetector without porous silicon on the surface. Therefore the forming porous silicon on the suface of pyramid in U-shape MSM photodetector is appropriate for the fabrication of MSM photodetector with high photocurrent.
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Extraction of BSIM3V3 junction capacitance model of nMOSFET in VLSI: Devices,circuits and systems
(2018-07-02)
Ruangphanit, A.
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Pedlub, R.
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Muanghlua, R.
An extraction methodology and modeling of BSIM3v3 junction capacitance of NMOSFET in VLSI is proposed. In this paper, the extraction can lead to an improved accuracy on p-n junction capacitance. This methodology can extract parasitic capacitance due to bottom area junction and side-wall capacitance components at the field oxide side and gate oxide side. The capacitance model parameters in BSIM3v3 are proposed also. The manual calculation was used for the extraction methodology. A comparison is made to checking the accuracy of the capacitance models. The results show that a good agreement was found.
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The Effect of Gamma Irradiation on Threshold Voltage and Channel Mobility Degradation of NMOS
(2018-07-02)
Kerdpradist, Amonrat
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Ruangphanit, Anucha
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Titiroongruang, Wisut
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Muanghlua, Rangson
This paper presents the effect of Gamma Irradiated on threshold voltage, surface mobility and transconductance on N-channel MOSFET devices at a gate oxide thickness of 15 nanometers, which is fabricated at Thai Microelectronics Center by 0.8-micron CMOS technology. Then gamma irradiation (Co-60) at a total dose varied from 1 to 10 \mathbf{kGy}. By performing five rounds to observe changes in threshold voltage when the devices were exposed to gamma rays for measurement to extraction threshold Voltage (V<inf>TH</inf>) into the surface mobility (Uo) from I<inf>DS</inf>Vs V<inf>Gs</inf> curves in the saturation region. As a result, the threshold Voltage reduces at highest dose by approximately 38% compared with conventional N-channel MOSFET, for a parameter extraction in the level 3 model for MOSFET SPICE parameters is presented.
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Implementation of the temperature and narrow channel dependence on threshold voltage model of NMOSFETs
(2014-01-01)
Ruangphanit, A.
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Sakuna, N.
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Niemcharoen
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Phinyo, B.
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Muanghlua, R.
In this paper, a new simplify mismatch of temperature and narrow channel dependence of threshold voltage of NMOS developed from spice level 3 and BSIM3 are proposed. The I<inf>DS</inf>-V<inf>GS</inf> in linear region was used with a different channel width. The parameters extraction procedure is based on the measurement of the transconductance characteristics of MOSFET in linear region. In this model, the temperature coefficient for threshold voltage and the body-bias coefficient of threshold voltage of a big MOSFET and a narrow channel width of MOSFET are determined. The results show that, the deviation of threshold voltage from the predicted model compared with the experimental data is less than 5%. © 2014 IEEE.
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Influence of fabrication processing on perovskite phase formation of KNN-BZT
(2008-01-01)
Sutapun, M.
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Muanghlua, R.
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Huang, C. C.
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Cann, D. P.
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Vittayakorn, W. C.
The binary system of (1-x)(K<inf>1/2</inf>Na<inf>1/2</inf>)NbO <inf>3</inf>-xBi(Zni/2Ti<inf>1/2</inf>)O<inf>3</inf>; x = 0.0-0.30 ceramics was fabricated by conventionally mixed oxide and two-stage mixed oxide methods. Phase development of calcined powders and the crystal structure of sintered ceramics were analyzed by X-ray diffraction (XRD). The microstructure analyses were undertaken by scanning electron microscopy (SEM). In the conventional method, the perovskite phases were obtained for compositions containing only 10 mol % KNN. For compositions above this amount, a complex mixture of phases was observed. However, the complete solid solution of perovskite phase, prepared by two-stage mixed oxide, was retained up to 20 mole % BZT content. The experiments in this study suggest that the two-stage mixed oxide method helps to stabilize the perovskite phase better, when compared with the conventional method. © 2008 Trans Tech Publications, Switzerland.

Muanghlua, Rangson

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