Teesetsopon, Pichanan

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Effective performance for undoped and boron-doped double-layered nanoparticles-copper telluride and manganese telluride on tungsten oxide photoelectrodes for solar cell devices
(2016-11-01)
Srathongluan, Pornpimol
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Vailikhit, Veeramol
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Teesetsopon, Pichanan
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Choopun, Supab
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Tubtimtae, Auttasit
This work demonstrates the synthesis of a novel double-layered Cu<inf>2−x</inf>Te/MnTe structure on a WO<inf>3</inf> photoelectrode as a solar absorber for photovoltaic devices. Each material absorber is synthesized using a successive ionic layer adsorption and reaction (SILAR) method. The synthesized individual particle sizes are Cu<inf>2−x</inf>Te(17) ∼5–10 nm and MnTe(3) ∼2 nm, whereas, the aggregated particle sizes of undoped and boron-doped Cu<inf>2−x</inf>Te(17)/MnTe(11) are ∼50 and 150 nm, respectively. The larger size after doping is due to the interconnecting of nanoparticles as a network-like structure. A new alignment of the energy band is constructed after boron/MnTe(11) is coated on boron/Cu<inf>2−x</inf>Te nanoparticles (NPs), leading to a narrower E<inf>g</inf> equal to 0.58 eV. Then, the valence band maximum (VBM) and conduction band minimum (CBM) with a trap state are also up-shifted to near the CBM of WO<inf>3</inf>, leading to the shift of a Fermi level for ease of electron injection. The best efficiency of 1.41% was yielded for the WO<inf>3</inf>/boron-doped [Cu<inf>2−x</inf>Te(17)/MnTe(11)] structure with a photocurrent density (J<inf>sc</inf>) = 16.43 mA/cm2, an open-circuit voltage (V<inf>oc</inf>) = 0.305 V and a fill factor (FF) = 28.1%. This work demonstrates the feasibility of this double-layered structure with doping material as a solar absorber material.
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Copper incorporation in Mn2+-doped Sn2S3 nanocrystals and the resultant structural, optical, and electrochemical characteristics
(2018-08-15)
Noppakuadrittidej, Prae
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Vailikhit, Veeramol
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Teesetsopon, Pichanan
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Choopun, Supab
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Tubtimtae, Auttasit
Sn<inf>2</inf>S<inf>3</inf> nanocrystals (NCs) with both Mn2+ doping and Cu2+ incorporation were synthesized using a chemical bath deposition method. The Cu2+ ions formed an anorthic Mn2+-doped Cu<inf>2</inf>SnS<inf>3</inf> structure with E<inf>g</inf> = 1.44 eV, which altered the material's optical and photo/electrochemical properties. After coating the bare Nb<inf>2</inf>O<inf>5</inf> electrode with Mn2+-doped Sn<inf>2</inf>S<inf>3</inf> or Mn2+-doped Cu<inf>2</inf>SnS<inf>3</inf> NCs, the photoluminescence spectrum was blue-shifted to 411.13 nm from 411.69 nm. Compared to the sample without Cu2+, the Cu2+-incorporated sample showed a slightly stronger emission at the same position, possibly due to disorder in the crystalline structure based on variations at the interface of Mn2+-doped Cu<inf>2</inf>SnS<inf>3</inf> NCs. Electrochemical analysis showed a lower charge transfer resistance in the Mn2+-doped Cu<inf>2</inf>SnS<inf>3</inf>, which is related to its larger electroactive surface area. The larger electroactive surface area is attributed to the Faradaic redox processes at the electrode surface, which suppresses the carrier recombination. The coexistence of Cu2+ and Mn2+ ions shortened the electron transport pathway at the interface and improved the carrier diffusion coefficient and diffusion length, leading to a higher specific capacitance that implies higher energy storage performance. Finally, the I-V characteristics of the Mn2+-doped Cu<inf>2</inf>SnS<inf>3</inf>-coated Nb<inf>2</inf>O<inf>5</inf> electrode under various light illumination conditions indicated its better efficiency in photoresponse, electron generation, and charge collection, owing to a superior charge transport mechanism. Detailed results were obtained about the charge dynamics in the as-prepared photo/electrochemical devices with Cu2+ incorporation in the Mn2+-doped SnS<inf>3</inf> electrode.
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Effective properties of undoped and Indium3+-doped tin manganese telluride (Sn1 − xMnxTe) nanoparticles via using a chemical bath deposition route
(2017-06-09)
Boon-on, Patsorn
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Tubtimtae, Auttasit
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Vailikhit, Veeramol
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Teesetsopon, Pichanan
;
Choopun, Supab
Tin manganese telluride nanoparticles (Sn<inf>1−x</inf>Mn<inf>x</inf>Te NPs) were first synthesized on a niobium pentoxide (Nb<inf>2</inf>O<inf>5</inf>) film using a chemical bath deposition (CBD) route. An individual particle size before and after indium (In3+) doping of ∼70–150 nm was investigated with stoichiometric formation of the SnMnTe phase. Furthermore, a cubic or rocksalt structure of the Sn<inf>0.938</inf>Mn<inf>0.062</inf>Te phase was also kept incorporated in the structure. The plotted energy band gaps for undoped and In3+-doped samples were 2.17 and 1.83 eV, respectively. The reduction of photoluminescence (PL) spectra after In3+ doping, while the indium dopant acted as a trap state incorporated in Sn<inf>1−x</inf>Mn<inf>x</inf>Te NPs, showed enhanced charge separation and reduced charge recombination, which resulted in a higher charge density trapped in the conduction band of Nb<inf>2</inf>O<inf>5</inf> and was also confirmed by the result of anodic peaks in the cyclic voltammetry. These results suggest new possibilities in optoelectronic and electrochemical devices.

Teesetsopon, Pichanan

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