Teesetsopon, Pichanan

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Teesetsopon, Pichanan
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pichanan.te@kmitl.ac.th

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    Item type:Publication,
    Effective properties of undoped and Indium3+-doped tin manganese telluride (Sn1 − xMnxTe) nanoparticles via using a chemical bath deposition route
    (2017-06-09)
    Boon-on, Patsorn
    ;
    Tubtimtae, Auttasit
    ;
    Vailikhit, Veeramol
    ;
    Teesetsopon, Pichanan
    ;
    Choopun, Supab
    Tin manganese telluride nanoparticles (Sn<inf>1−x</inf>Mn<inf>x</inf>Te NPs) were first synthesized on a niobium pentoxide (Nb<inf>2</inf>O<inf>5</inf>) film using a chemical bath deposition (CBD) route. An individual particle size before and after indium (In<sup>3+</sup>) doping of ∼70–150 nm was investigated with stoichiometric formation of the SnMnTe phase. Furthermore, a cubic or rocksalt structure of the Sn<inf>0.938</inf>Mn<inf>0.062</inf>Te phase was also kept incorporated in the structure. The plotted energy band gaps for undoped and In<sup>3+</sup>-doped samples were 2.17 and 1.83 eV, respectively. The reduction of photoluminescence (PL) spectra after In<sup>3+</sup> doping, while the indium dopant acted as a trap state incorporated in Sn<inf>1−x</inf>Mn<inf>x</inf>Te NPs, showed enhanced charge separation and reduced charge recombination, which resulted in a higher charge density trapped in the conduction band of Nb<inf>2</inf>O<inf>5</inf> and was also confirmed by the result of anodic peaks in the cyclic voltammetry. These results suggest new possibilities in optoelectronic and electrochemical devices.