Phetchakul, Toempong

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Preferred name
Phetchakul, Toempong
Alternative Name
Phetchakul, T.
Main Affiliation
Email
toempong.ph@kmitl.ac.th

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    Item type:Publication,
    "Backward diode" characteristics of p-type diamond/n-type silicon heterojunction diodes
    (1996-01-01)
    Phetchakul, Toempong
    ;
    Kimura, Hideki
    ;
    Akiba, Yukio
    ;
    Kurosu, Tateki
    ;
    Iida, Masamori
    Rectification characteristics obtained for p-type diamond/n-type silicon heterojunctions have been studied. The current-voltage (I-V) characteristics of p-n heterojunctions show the same manner of rectification as in a backward diode. Forward current depends on both the concentration of boron atoms in polycrystalline diamond and the ambient temperature. The temperature dependence of I-V characteristics indicated that forward and reverse currents are mainly ascribed to diffusion and tunnelling currents, respectively. This current flow mechanism is peculiar to a backward diode. A simplified energy band model was proposed to explain the current transport mechanism in these heterojunctions. The experimental results can be explained with the aid of the proposed energy band model.