Phetchakul, Toempong

Preferred name

Alternative Name

Phetchakul, T.

Main Affiliation

School of Engineering

toempong.ph@kmitl.ac.th

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The effect injection width and temperature-offset compensation of magnetotransistor
(2011-12-01)
Leepattarapongpan, Chana
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Phetchakul, Toempong
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Penpondee, Naritchaphan
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Pengpad, Puttapon
;
Srihapat, Arckom
This paper presents effect of injection witdh on Magnetotransistor. Emitter area was confined by LOCOS and the injection window size was varied from 4, 5 to 10 microns. With bias current of 3 mA the window size 4 micron gives best sensitivity at 10mV/T. Measument linearity is 0.1 % full scale. voltage gain of 10 was used for minimizing temperature coefficient to be around 7.9 mV/°C measured from 25 to 125 °C. Temperature coefficient divided by sensitivity give us a relative temperature sensitivity of 7.9 % T/°C. Second magnetic sensor device has been used for temperature compensation. The second device was config as magnetic field immune then it was used as a temperature offset voltage reference. The added module reduces overall temperature sensitivy down to 0.3 % T/°C. © 2011 Published by Elsevier Ltd.
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Magnetic TFET (MAG-TFET)
(2022-01-01)
Boonlua, Thanet
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Poyai, Amporn
;
Phetchakul, Toempong
This paper presents a new structural magnetic field sensor device. The device structure uses the basic structure of tunneling field effect transistor (TFET). The mechanism uses the current-mode Hall phenomenon with tunneling electron carriers from source to drain. The device structure consists of source, gate and drain with two separate contacts on both sides D1 and D2 to accommodate the amount of current difference (ID) caused by Lorentz's force deflection. The study is carried out by using TCAD simulation. The magnetic field intensity response is linearly dependence. The sensitivity depends on the amount of current and magnetic field intensity. The sensitivity (S) obtained by this device which has width (Fw) 5 nm, length (Lg) 100 nm and height (Fh) 5 nm at biased current of 1000, 100, 10, 1 µA are 0.0133, 0.0263, 0.0812 and 1.22 µA.T-1 respectively. From this experiment, the best relative sensitivity (SR) is 0.000812 T-1 at 100 µA.
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Photoconductor diamond film detector
(2008-10-06)
Jesen, S.
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Thaiyotin, L.
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Cheirsirikul, S.
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Phetchakul, T.
Diamond film was synthesized on a silicon substrate by MPCVD (Microwave Plasma Chemical Vapor Deposition) process and used to fabricate a photoconductor for the detection of UV light. The photoconductor was fabricated on free standing diamond film and operation in a planar. This paper presents the spectral response of photoconductor, concentration of boron doping, times and temperature. The device shows good response to UV light and a very low response to visible light. Furthermore, the device reveals little change in spectral response with increasing temperature at all wavelengths. © 2008 IEEE.
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Effect of Substrate Thickness on Horizontal Magnetoresistance
(2020-05-27)
Phetchakul, T.
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Chemthung, Y.
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Poyai, A.
This paper presents the effect of substrate thickness on horizontal magnetoresistance that detects the horizontal magnetic field perpendicular to bulk cross section area. The substrate thickness (T) concerns directly to the current density distribution and the effective depth (t) of current path corresponding to cross section area of current. The horizontal magnetoresistance depends on current distribution which concerns with substrate concentration, length, width and thickness of resistor. It changes by the effective depth of current path change by the unbalance between Lorentz's force and Hall electrical force in vertical direction. From this study, the sensitivity of device increases with the thickness of substrate up to critical substrate thickness and still constant for thickness greater than this critical value. The current distribution is limited when substrate thickness less than a critical value and fully distributes when the thickness is greater than this value. At the same constant current, the longer length of resistor shows the lower current density which needs the longer effective depth of current which causes the critical substrate thickness to be increased accordingly.
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The effect of deviation current to 5-contacts vertical Hall device
(2016-09-06)
Phetchakul, Toempong
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Poonsawat, Sawatdipong
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Poyai, Amporn
This paper presents the new model of 5-contacts vertical Hall device. Despite of the induced force from Hall electric field act upon the current along the contacts for induced Hall voltage, there are some deviation currents from the middle contact that contribute the Hall voltage. The deviation current pass through the bulk resistance causes the voltage drop between the voltage contacts. From this study for n-type substrate, the deviation current created voltage about 20-30 percent of the total Hall voltage that mean it is the importance mechanism for vertical Hall device. This study used 3-D simulation by Sentaurus TCAD.
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The study of forward and reverse schottky junction for dual magnetodiode
(2012-06-01)
Phetchakul, T.
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Luanatikomkul, W.
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Yamwong, W.
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Poyai, A.
This paper presents schottky diode for sensing magnetic field. The structure is the same as dual magnetodiode that had been reported by the same group. The device can operate both in forward and reverse biasing for magnetic field device. The sensitivity (ΔV <inf>o</inf>/ΔB) by simulation of forward bias is 0.8 mV/T at the current 1.93 μA and reverse bias is 6 nV/T at the current 13.49 pA. Two modes of operation show linearity which electron is the only type of carrier. The mechanism of forward and reverse modes of operation are described. © 2012 IEEE.
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Non-split drain MAGFET
(2019-07-01)
Nakachai, Rattapong
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Poyai, Amporn
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Phetchakul, Toempong
This paper presents the design of non-split drain MAGFET for high sensitivity magnetic device. The structure is split drain MAGFET that has no gap between drains so drain is only one drain that has split contacts within a drain. It is proved that MAGFET is not necessary to design by split drain with gap between them. The sensitivity is the highest for non-split drain structure. This study compares sensitivities of the two structures with gap between drains of 3, 2, 1 and 0μm at 0.25 mA, aspect ratio L/W=1, which are 0.0326, 0.0389, 0.0481 and 0.0595 T-1, respectively. The relative sensitivities (S<inf>r</inf>) of non-split drain are also highest at other aspect ratios which are 0.0003, 0.0036, 0.0092 and 0.0231 T-1 for L/W=0.2 and 0.0182, 0.0264, 0.0338 and 0.0479 T-1 for L/W=0.6, respectively. The non-split drain MAGFET is a new design for highest sensitivity. The non-split drain design is the smart way for high sensitivity MAGFET.
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The low power 3D-magnetotransistor based on CMOS technology
(2011-12-01)
Leepattarapongpan, Chana
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Phetchakul, Toempong
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Penpondee, Naritchaphan
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Pengpad, Puttapon
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Srihapat, Arckom
This article presents a 3D magnetotransistor for detecting magnetic field in three dimensions (B <inf>X</inf>, B <inf>Y</inf>, and B <inf>Z</inf>) by relying on the difference between base and collector currents (ΔI <inf>CB</inf>). This device used low biasing current. It was designed and fabricated using CMOS fabrication technology. The device structure consisted of one emitter, 4 collectors and 4 bases. LOCOS oxide was grown to surround the emitter area to limit lateral carrier loss, and therefore reducing the overall biasing current. The experiment showed that, at 0.2 mA of biasing current, the BX, BY and BZ direction sensitivity to magnetic field within the range of 0 - 400 mT are 0.05, 0.07 and 0.145 mV/mT, respectively. © 2011 IEEE.
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Split-current magnetoresistor
(2013-10-04)
Phetchakul, Toempong
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Taisettavatkul, Prateep
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Yamwong, Wittawat
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Poyai, Amporn
The split-current magnetoresistor is proposed here. The structure likes the series magnetoresistor that one end split into two symmetrical terminals, so it is the magnetoresistor with three terminals. It uses the Hall effect current mode as magnetoresistor but the output is the differential current instead of resistance. It shows good linearity and can detect the magnetic field direction. The sensitivity in the differential current of width 100 μm and length 200 μm at 1 mA is 2.788×10-6 A/T constantly while the conventional one in the differential resistance is varied with magnetic field. It is made of silicon non magnetic material so it is compatible with the modern low-voltage current-mode integrated circuit. © (2013) Trans Tech Publications, Switzerland.
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The new design for magnetoresistance effect on hall plate structure
(2012-10-02)
Phetchakul, T.
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Taisettavatkul, P.
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Pengchan, W.
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Yamwong, W.
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Poyai, A.
This paper presents the new design which contributes to magnetoresistance effect on Hall plate by compared with series resistance structure by Sentaurus TCAD program. A new design creates zero Hall voltage area which the carriers move and deflect freely. The Hall plate structure is n-type silicon with 400 μm length, 100 μm width and 1 μm thickness. Both designs have percentage of magnetoresistance effect about 20% at doping concentration 2×10 15cm -3, temperature 300K at magnetic field 3 Tesla. A new design on Hall plate structure is easier than the classical series resistance and has no effect of metal space which is in series resistance structure. © 2012 IEEE.

Phetchakul, Toempong

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