Phetchakul, Toempong

Preferred name

Alternative Name

Phetchakul, T.

Main Affiliation

School of Engineering

toempong.ph@kmitl.ac.th

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The low power magnetotransistor based on the CMOS technology
(2010-07-30)
Sottip, Panyakorn
;
Phetchakul, Toempong
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Leepattarapongpan, Chana
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Penpondee, Naritchapan
;
Pengpad, Putapon
This paper presents the low power magnetotransistor detect magnetic field density in vertical direction. The devices can detect magnetic field by Lorentz force act upon minority carrier in base and difference between base and collector current (ΔI<inf>CB</inf>) was occurred. The structure of the low power magnetotransistor consist of one emitter, one collector and one base contact and designed decrease emitter injection area was 5 um and growth LOCOS oxide around emitter area. The structure was generated and simulated by TCAD Sentuarus simulation package and shows increase sensitivity of the low power magnetotransistor when compare the three terminals magneto-transistor. From the experiment, the low power magneto-transistor can operate at bias current less than 1 mA and high sensitivity is 20.64 mV/T. The device increase sensitivity 2.53 times at bias current 5 mA and decrease power consumption 85% when compare the three terminals magnetotransistor.
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Investigation on temperature effect on alcohol sensing of multi-walled carbon nanotube
(2011-10-04)
Phetchakul, Toempong
;
Sangnual, Assuchol
;
Sutthinet, Chalin
This research studied the environment temperature affect to alcohol detecting and heated carbon nanotube film after alcohol detecting for a good chemical sensor application. The results showed that at the environment temperature below the room temperature (in this work -5 °C), the percentage of resistance changing is 15.70 % while at the 85 °C is 3.35 %. The heated CNT film after alcohol absorption during detecting time reduces the recovery time of the measurement cycle and reduces the minimum base resistance so increasing sensitivity of ΔR of CNT sensor. The results show that ΔR reaches to 76.22 % at environment temperature -5 °C, heating temperature 85 °C, and recovery time is faster than in the case of room temperature and no heating the film. © 2011 IEEE.
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Magnetic finfet (MAGFinFET)
(2019-07-01)
Pamonchom, Chanvit
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Nakachai, Rattapong
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Sutthinet, Chalin
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Poyai, Amporn
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Phetchakul, Toempong
This paper presents magnetic sensor that uses FinFET structure. It is n channel FinFET with two separate contacts on the fin sides of drain that detects the vertical magnetic field. The gate length, fin height and fin width are 15, 15 and 5 nm, respectively. The device operates by Lorentz's force induced by magnetic field crossed perpendicular with drain current. It acts upon drain current and creates the drain differential current. The linearly dependence shows the sensitivity 181.6 nA/T, at current 1 mA. MAGFinFET is a low power and low voltage magnetic field sensor.
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The defects analysis in CMOS fabrication by arrhenius activation energy technique
(2011-10-04)
Pengchan, Weera
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Phetchakul, Toempong
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Poyai, Amporn
Low power consumption device can be realized by low junction leakage current. This leakage current relates to the defects in the depletion region of p-n junction. Among variety process steps, implantation step may generate defects. Therefore, the implantation-induced defects have been studied from the activation energy which has been obtained from the leakage current of p-n junction. The different geometry p-n junctions have been fabricated by a standard CMOS technology. The current-voltage (I-V) and high frequency capacitance-voltage (C-V) characteristics of p-n junctions with temperature dependence have been measured. The electrically active defects from implantation process can be extracted from the junction generation current density versus temperature. Base on this analysis, it will be demonstrated that the implantation-induced defects have been found in p+-n-well more than in n+-p-substrate. Finally, the possible nature of the defect will be discussed. © 2011 IEEE.
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Study on temperature effect on p-n and Zener junction for PTAT temperature sensor
(2008-10-06)
Songmalai, P.
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Phetchakul, T.
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Pengchan, W.
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Ratanaudomphisut, E.
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Supadech, J.
Research on a new compact BJT PTAT temperature sensor structure has been reported. The zener junction-connected BJT transistor and Base-Emitter voltage of transistor can be temperature dependent. The performance of new compact PTAT circuit can be improved by using difference in thermal characteristics between p-n and zener junction. ΔV/ΔT can be further increased by connecting p-n and zener junction in series. The results show that ΔK/ΔT of the circuit increased by 6.77 timed or 85% compared with conventional PTAT and connecting two p-n and zener junction in series. The result show that ΔK/ΔT of the circuit increased by 3.3 timed or 70%compared with proposed circuit the output voltage is large enough so that it can be used directly without additional amplifier. This also improves S/N ratio and the unique linearity of PTAT is still preserved. The working temperature of circuit is between -60°C to 160°C © 2008 IEEE.
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Simulation of MOSFET as horizontal magnetic MOSFET (MAGFET)
(2017-12-14)
Nakachai, Rattapong
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Phetchakul, Toempong
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Poonsawat, Sawatdipong
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Poyai, Amporn
This work proposes the regular long channel MOSFET structure used as magnetic MOSFET (MOSFET that can detect magnetic field) in parallel direction (y-axis). The structure is regular MOSFET that has drain, gate, source and substrate (body). The mechanism of device is Hall effect in current mode between channel MOSFET current and substrate current in x-axis direction. The dimensions of channel MOSFET are 20 μm wide and 20 μm long. The channel and substrate currents are balance adjusted in the same values at 0.5, 1 and 1.5 mA. From the simulation results by TCAD sentaurus, the relative sensitivity of device is 0.01 T-1 in y and - y direction, respectively. It can be used as magnetic sensor for one dimension in parallel field.
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A merged magnetotransistor for 3-axis magnetic field measurement based on carrier recombination-deflection effect
(2014-01-01)
Leepattarapongpan, Chana
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Phetchakul, Toempong
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Penpondee, Naritchaphan
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Pengpad, Puttapon
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Srihapat, Arckom
This article presents a novel magnetotransistor based on carrier recombination-deflection effect for detecting magnetic field in three dimensions (B<inf>X</inf>, B<inf>Y</inf>, and B<inf>Z</inf>) by relying on the difference between base and collector currents (I<inf>CB</inf>). This device used low biasing current. It was designed and fabricated using CMOS fabrication technology. The device structure consisted of one emitter, 4 collectors and 4 bases. All four collector terminals were connected with each other. The same was true for the four base terminals. LOCOS oxide was grown to surround the emitter area to limit lateral carrier loss, and therefore reducing the overall biasing current. The experiment showed that, at 0.2 mA of biasing current, the B <inf>X</inf>, B<inf>Y</inf> and B<inf>-Z</inf> direction sensitivity to magnetic field within the range of 0-400 mT are 2, 5 and 14.5%/T, respectively. This research on the merged magnetotransistor produced magnetic sensors with small size, high performance with wide range of applications. © 2014 Elsevier Ltd.
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The increase sensitivity of PNP-magnetotransistor in CMOS technology
(2015-02-02)
Leepattarapongpan, Chana
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Phetchakul, Toempong
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Pengpad, Puttapon
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Srihapat, Arckom
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Jeamsaksiri, Wutthinan
This paper presents improve sensitivity of pnp-magnetotransistor for detect vertical magnetic field response. The device structure consisted of one emitter, four collectors and four bases. The four collectors are separate to form four terminals. The same is true for the four bases. The experiment showed that, at 2 and 4mA of biasing current, magnetic field in B<inf>Z</inf> direction sensitivity within the range of 0-400 mT are 0.045 and 0.09 mV/mT in single mode. The sensitivity of merge mode are 0.15 and 0.3 mV/mT. The magnetic field response of merge mode shows 4-time increase of the magnetic field sensitivity comparative to single mode.
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The study of p-n and schottky junction for magnetodiode
(2012-01-01)
Phetchakul, Toempong
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Luanatikomkul, Wittaya
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Leepattarapongpan, Chana
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Chaowicharat, Ekalak
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Pengpad, Putapon
This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.
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Development of Hetero-Junction Cells with a DLC Film Anti-reflection Layer
(2024-01-01)
Srisantirut, Tanawit
;
Phetchakul, Toempong
Diamond-like carbon (DLC) films were synthesized on glass slides and heterojunction cells by ECR-CVD (Electron-Cyclotron Resonance Plasma-Enhanced Chemical-Vapor Deposition) method using acetylene (C<inf>2</inf>H<inf>2</inf>), nitrogen (N<inf>2</inf>) gases and substate bias at 0,50,100 V. We investigate the effects of varying substrate bias on the characteristics of DLC film and its optical properties. Their characteristics were analyzed using the Raman technique the D and G peaks at approximately 1356 ± 5 cm−1 and 1578 ± 5 cm−1 respectively. The film's surface was examined using AFM imaging. Films with increased substrate biasing tend to exhibit a smoother surface. The film thickness varies depending on substrate biasing and nitrogen doping. The best light transmission was observed in films without substrate biasing. Analysis of the IV characteristics in experimental heterojunction cells revealed that cells with synthesized DLC films showed an efficiency increase from 0.74% to 0.78%. For cells doped with nitrogen, the efficiency rose from 0.74% to 0.79%. The DLC film has hydrogen bonding that can help enhance the efficiency of ITO.

Phetchakul, Toempong

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