Phetchakul, Toempong

Preferred name

Alternative Name

Phetchakul, T.

Main Affiliation

School of Engineering

toempong.ph@kmitl.ac.th

Now showing 1 - 6 of 6

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A merged magnetotransistor for 3-axis magnetic field measurement based on carrier recombination-deflection effect
(2014-01-01)
Leepattarapongpan, Chana
;
Phetchakul, Toempong
;
Penpondee, Naritchaphan
;
Pengpad, Puttapon
;
Srihapat, Arckom
This article presents a novel magnetotransistor based on carrier recombination-deflection effect for detecting magnetic field in three dimensions (B<inf>X</inf>, B<inf>Y</inf>, and B<inf>Z</inf>) by relying on the difference between base and collector currents (I<inf>CB</inf>). This device used low biasing current. It was designed and fabricated using CMOS fabrication technology. The device structure consisted of one emitter, 4 collectors and 4 bases. All four collector terminals were connected with each other. The same was true for the four base terminals. LOCOS oxide was grown to surround the emitter area to limit lateral carrier loss, and therefore reducing the overall biasing current. The experiment showed that, at 0.2 mA of biasing current, the B <inf>X</inf>, B<inf>Y</inf> and B<inf>-Z</inf> direction sensitivity to magnetic field within the range of 0-400 mT are 2, 5 and 14.5%/T, respectively. This research on the merged magnetotransistor produced magnetic sensors with small size, high performance with wide range of applications. © 2014 Elsevier Ltd.
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"Backward diode" characteristics of p-type diamond/n-type silicon heterojunction diodes
(1996-01-01)
Phetchakul, Toempong
;
Kimura, Hideki
;
Akiba, Yukio
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Kurosu, Tateki
;
Iida, Masamori
Rectification characteristics obtained for p-type diamond/n-type silicon heterojunctions have been studied. The current-voltage (I-V) characteristics of p-n heterojunctions show the same manner of rectification as in a backward diode. Forward current depends on both the concentration of boron atoms in polycrystalline diamond and the ambient temperature. The temperature dependence of I-V characteristics indicated that forward and reverse currents are mainly ascribed to diffusion and tunnelling currents, respectively. This current flow mechanism is peculiar to a backward diode. A simplified energy band model was proposed to explain the current transport mechanism in these heterojunctions. The experimental results can be explained with the aid of the proposed energy band model.
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High sensitivity non-split drain MAGFET for wireless sensor networks
(2020-08-14)
Nakachai, Rattapong
;
Poyai, Amporn
;
Phetchakul, Toempong
The non-split drain MAGFET proposed in this paper is aspossess an ideal, highest sensitivity in the same type of device, current mode for low power, and low voltage that can be embedded within a system for wireless sensor networks application. It is a split-drain MAGFET that is designed to have no gap between drains so that there is no loss from the gap. There are two split contacts in one drain to represent the split drains for current difference that induced from due to magnetic field. The relative sensitivity comparison among all the gaps (3, 2, 1, and 0 µm) with all aspect ratio of width (W)/length (L) (L/W = 1, 0.6, and 0.2) at biased current 0.25 mA shows that the zero gap or the non-split drain MAGFET structure gives the highest sensitivity. The sensitivities of the non-split drain at the aspect ratios L/W = 1, 0.6, and 0.2 in this study are 0.0595, 0.0479, and 0.0231 T−1, respectively. It is proved that the gap is not necessary for the MAGFET. It is a new, smart way to design the MAGFET for the highest sensitivity and gap lossless for modern sensor applications.
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A novel dual magnetodiode for wireless sensor networks
(2020-08-14)
Sutthinet, Chalin
;
Poyai, Amporn
;
Phetchakul, Toempong
This paper presents a new magnetodiode, the so-called dual magnetodiode, for wireless sensor application. The device is a current mode which can be integrated with a chip compatible with modern low power, low voltage integrated circuit (IC). The structure and operation are completely different from a conventional magnetodiode. The structure is composed of two p–n junctions in that one region is common and the others are split terminals for output of differential current. The underlying mechanism is carrier deflection by induced force from a magnetic field. The carriers are injected from the common region by forward bias. The defection carriers diffuse, deflect, and recombine along substrate through split terminals according to direction and density of the magnetic field linearly and symmetrically. From the comparison of complementary structure of the split cathode and the split anode structure of L<inf>D</inf> = 50 µm, the bias current 1 mA and magnetic field 0.5 T, the relative sensitivities (S<inf>R</inf>) are 11.01 and 11.19 T−1, respectively. This device is a simple p–n junction structure which is compatible with all micro/nanotechnology.
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Novel MAGFinFET: Operation, Design and Geometry Effect for Modern Sensors
(2022-01-01)
Swe, Khine Thandar Nyunt
;
Pamonchom, Chanvit
;
Poyai, Amporn
;
Phetchakul, Toempong
This paper presents a new magnetic detection device, MAGFinFET, which is based on the advanced 3D FinFET structure. It can measure the vertical magnetic field by designing two contacts on both sides of the drain. The operation uses the principle of the current mode of Hall effect causing the deflection of the drain currents at both contacts. The 3D geometry effect was studied: channel length, fin height and fin width. It can be seen that when the values of these parameters are increased, the differential currents and relative sensitivities are increased linearly. Relative sensitivity has the highest value 0.00201 T-1 at channel length 50 nm. Fin height and fin width of 50 nm give the highest sensitivity of 0.00468 T-1 and 0.00415 T-1 respectively. Current density distributions of the different variations of each parameter Lg, Fh and Fw are observed by applying vertical magnetic field on the device. The 3D-MAGFinFET has been compared to that of the 2D non-split drain MAGFET structure and bulk fin resistor that use n-type semiconductor instead of induction channel. MAGFinFET shows quite higher sensitivity compared to bulk fin resistor. MAGFinFET mechanism models and simple characteristic equations are proposed in this work. Sentaurus TCAD is used for the device structure and simulation for the characteristics ofMAGFinFET. This FinFET based device can be fabricated with modern integrated circuit technology.
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UV photodetector from Schottky diode diamond film
(2002-03-01)
Thaiyotin, L.
;
Ratanaudompisut, E.
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Phetchakul, T.
;
Cheirsirikul, S.
;
Supadech, S.
Diamond film was synthesized on a silicon substrate by hot-filament CVD and used to fabricate a Schottky photodiode for the detection of UV light. This paper presents an improved structure of photodiode, which reduces the effect of grain boundaries in the polycrystalline diamond film. The Schottky photodiode was fabricated on free-standing diamond film and operation in a vertical direction can be expected to reduce the effect of grain boundaries. The device shows good response to UV light and a very low response to visible light. The dark current is less than 10 pA. The device response time is less than 20 μs. Furthermore, the device reveals little change in spectral response with increasing temperature at all wavelengths. © 2002 Elsevier Science B.V. All rights reserved.

Phetchakul, Toempong

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