Boonyarattanakalin, Kanokthip
Loading...
Preferred name
Boonyarattanakalin, Kanokthip
Alternative Name
BOONYARATTANAKALIN, Kanokthip
Boonyarattanakalin, K.
Main Affiliation
Email
kanokthip.bo@kmitl.ac.th
2 results
Now showing 1 - 2 of 2
- Some of the metrics are blocked by yourconsent settings
Item type:Publication, Effect of F incorporation on physical and optical properties of hydrothermally grown ZnO nanorods(2018-01-01); F-doped ZnO nanorods were synthesized via hydrothermal process with variation of Fluorine doping contents (0-10%) starting from zinc oxide thin film as a seeding layer for nanorod growth. The zinc oxide seeding thin film was prepared by sol-gel spin coating at 2000 rpm on glass substrate using zinc acetate precursor with annealing at 500°C in air for 2 h. Ammonium fluoride (NH<inf>4</inf>F) was used as F doping precursor. The properties of F-doped ZnO nanorods were characterized by field emission electron microscope (FESEM), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX) and UV-Visible spectrophotometer. Corresponding results indicated that growth of ZnO:F nanorods with good crystallinity and grown in (002) plane in undoped ZnO and F-doped ZnO 5%. The average size diameter of undoped and F-doped ZnO nanorods at 3%, 5% and 10% are 56, 96, 70 and 103 nm, respectively. From cross section images the average length of undoped and F-doped ZnO nanorods at 3%, 5% and 10% are 400, 375, 199 and 478 nm, respectively. The transmittance spectra shows moderate transparency (<80%) of the ZnO nanorod film in visible region with corresponding band gap range of 3.25-3.28 eV. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Growth and characterization of Ga/F co-doped ZnO nanorods/nanodisks via hydrothermal process(2016-12-01); Ga/F co-doped ZnO nanorods/nanodisks (GFZO) were synthesized using a hydrothermal process by varying the Ga doping levels (1-5 wt.%) and F doping levels (1-5 wt.%). Zinc nitrate, gallium nitrate hydrate and ammonium fluoride were chosen as starting precursors for Zn, Ga and F sources, respectively. The nanorod growth was initiated by zinc oxide seeding film fabricated by spin coating on glass substrate using zinc acetate precursor and annealed at 500°C for 2 h. Effect of different dopant concentrations on morphologies, structural, and optical properties of the samples were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM) and photoluminescence spectroscopy (PL), respectively. The results of Ga/F codoped ZnO (GFZO) were compared to the single doped specimens including Ga:ZnO (GZO) and F:ZnO (FZO) samples, and bare ZnO sample. The results suggest that content of either Ga or F dopant has high influence on relevant properties of as-synthesized nanorods/nanodisks.