Boonyarattanakalin, Kanokthip
Loading...
Preferred name
Boonyarattanakalin, Kanokthip
Alternative Name
BOONYARATTANAKALIN, Kanokthip
Boonyarattanakalin, K.
Main Affiliation
Email
kanokthip.bo@kmitl.ac.th
3 results
Now showing 1 - 3 of 3
- Some of the metrics are blocked by yourconsent settings
Item type:Publication, Effect of F incorporation on physical and optical properties of hydrothermally grown ZnO nanorods(2018-01-01); F-doped ZnO nanorods were synthesized via hydrothermal process with variation of Fluorine doping contents (0-10%) starting from zinc oxide thin film as a seeding layer for nanorod growth. The zinc oxide seeding thin film was prepared by sol-gel spin coating at 2000 rpm on glass substrate using zinc acetate precursor with annealing at 500°C in air for 2 h. Ammonium fluoride (NH<inf>4</inf>F) was used as F doping precursor. The properties of F-doped ZnO nanorods were characterized by field emission electron microscope (FESEM), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX) and UV-Visible spectrophotometer. Corresponding results indicated that growth of ZnO:F nanorods with good crystallinity and grown in (002) plane in undoped ZnO and F-doped ZnO 5%. The average size diameter of undoped and F-doped ZnO nanorods at 3%, 5% and 10% are 56, 96, 70 and 103 nm, respectively. From cross section images the average length of undoped and F-doped ZnO nanorods at 3%, 5% and 10% are 400, 375, 199 and 478 nm, respectively. The transmittance spectra shows moderate transparency (<80%) of the ZnO nanorod film in visible region with corresponding band gap range of 3.25-3.28 eV. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Ultraviolet response of ZnO nanorod/Sb-doped ZnO thin film homojunction structure prepared by all-chemically wet process(2025-02-01); ; In this work, ZnO nanorod/Sb-doped ZnO thin film structure was fabricated and its relevant properties were investigated. The device was prepared by Sb-doped ZnO sol-gel spin coating technique onto ITO substrate annealed in nitrogen atmosphere followed by the hydrothermal process to obtain ZnO nanorod. The crystal structure demonstrates (002) plane dominant hexagonal wurtzite ZnO without phase impurity. The deterioration in the crystal structure of Sb-doped ZnO due to the Sb is incorporated in the ZnO lattice. The element component in each layer is confirmed by depth profile measurement. The low transmittance in the visible region is due to high reflection at the surface of the ZnO nanorod. The electrical measurement confirms that ZnO nanorod/Sb-doped ZnO thin film has p-n homojunction properties under dark conditions and 18 times higher photovoltage than the Sb-doped/undoped ZnO double layer device under UV LED irradiation due to enhanced photon harvesting of ZnO nanorod structure. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Growth and characterization of Ga/F co-doped ZnO nanorods/nanodisks via hydrothermal process(2016-12-01); Ga/F co-doped ZnO nanorods/nanodisks (GFZO) were synthesized using a hydrothermal process by varying the Ga doping levels (1-5 wt.%) and F doping levels (1-5 wt.%). Zinc nitrate, gallium nitrate hydrate and ammonium fluoride were chosen as starting precursors for Zn, Ga and F sources, respectively. The nanorod growth was initiated by zinc oxide seeding film fabricated by spin coating on glass substrate using zinc acetate precursor and annealed at 500°C for 2 h. Effect of different dopant concentrations on morphologies, structural, and optical properties of the samples were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM) and photoluminescence spectroscopy (PL), respectively. The results of Ga/F codoped ZnO (GFZO) were compared to the single doped specimens including Ga:ZnO (GZO) and F:ZnO (FZO) samples, and bare ZnO sample. The results suggest that content of either Ga or F dopant has high influence on relevant properties of as-synthesized nanorods/nanodisks.